Abstract: Disclosed herein is a method of manufacturing a high-density fiber reinforced ceramic composite material, including the steps of: 1) impregnating a fiber preform material multi-coated with pyrolytic carbon and silicon carbide to form impregnated fiber reinforced plastic composite material; 2)carbonizing the impregnated fiber reinforced plastic composite material to form carbonized fiber composite material; 3) a primary reaction-sintering of the fiber composite material; 4) cooling the primarily reaction-sintered fiber composite material down to room temperature and then impregnating the primarily reaction-sintered fiber composite material with a solution in which a polymer precursor for producing silicon carbide (SiC) is dissolved in a hexane (n-hexane) solvent; and 5) a secondary reaction-sintering of the fiber composite material; and a high-density fiber reinforced ceramic composite material manufactured using the method.

Abstract: A collector for a fuel cell and a fuel cell are provided. The collector for a fuel cell comprises a conductive material and silicon carbide, wherein the conductive material is disposed in the silicon carbide. The collector for a fuel cell according to the present invention has excellent electrical conductivity both at a high temperature of 850° C. or more and at room temperature because it includes a conductive material and silicon carbide.

Abstract: Disclosed is a silicon carbide honeycomb having porosity of 5% or less but exceeding 0% and including silicon carbide and metal silicon. Also disclosed is a method of preparing a silicon carbide honeycomb. Further, disclosed is a solar receiver comprising silicon carbide and metal silicon.

Abstract: Disclosed herein is a flat-tubular solid oxide cell stack. The cell stack includes a plurality of unit cells which are stacked one on top of another. Each unit cell includes a flat-tubular electrode support made of a porous conductive material. A first-gas flow channel is formed in the electrode support in a longitudinal direction thereof. First gas flows along the first-gas flow channel. A second-gas flow channel is formed on the outer surface of the electrode support. Second-gas flows along the second-gas flow channel. A connection hole is formed on each of opposite ends of the first-gas flow channel of each of the unit cells and communicates with the first-gas flow channel of the adjacent unit cell so that the first gas flows along the unit cells in a zigzag manner in the longitudinal directions of the unit cells.

Abstract: A switch device whose assembly is easily performed with a simple structure and that has low manufacturing costs includes a case having a rectangular-shaped long groove, a long operating knob held in a vertically movable manner in the long groove, a plurality of operating bodies provided in the longitudinal direction of the long operating knob and operated with the vertical movement of the long operating knob, movable contacts respectively provided below the operating bodies, and a base on which the movable contacts and fixed contacts are mounted such that they can come in contact with or separate from each other. When the long operating knob is pressed, at least one of the plurality of operating bodies is pressed, causing the movable contacts provided below the operating bodies to come in contact with the fixed contacts.

Abstract: A lead frame includes a pair of guide rails separated at a predetermined space; at least one dam bar for connecting the pair of guide rails; a die paddle for mounting a semiconductor chip between the dam bar; a tie bar for supporting the die paddle; a plurality of leads each consisting of a first lead having a predetermined length extended from the dam bar between the dam bar and the die paddle, a second lead connected electrically to the first lead and formed bent in a first direction, and a third lead connected electrically to the second lead and formed bent in a second direction.

Abstract: A stacked semiconductor package is formed by forming a semiconductor wafer having a plurality of semiconductor chips with chip pads on their upper sides, where the chips are arranged in pairs; sawing the wafer along edges of the semiconductor chips; adhering a bonding tape to adjacent pairs of the semiconductor chips, wherein conductive interconnections on the bonding tape electrically couple corresponding chip pads of adjacent chips; cutting the bonding tape so that only adjacent pairs of the chips remain attached to one another; and stacking the adjacent pairs of semiconductor chips so that the upper sides of the chips are substantially parallel. The method may include an additional step of adhering a plurality of solder balls on the bonding tape to serve as external leads of the package. Further, the adjacent pairs of semiconductor chips may be attached to opposite sides of a heat conducting plate which serves to dissipate heat generated by the chips.

Abstract: A lead frame includes a pair of guide rails separated at a predetermined space; at least one dam bar for connecting the pair of guide rails; a die paddle for mounting a semiconductor chip between the dam bar; a tie bar for supporting the die paddle; a plurality of leads each consisting of a first lead having a predetermined length extended from the dam bar between the dam bar and the die paddle, a second lead connected electrically to the first lead and formed bent in a first direction, and a third lead connected electrically to the second lead and formed bent in a second direction.

Abstract: A stacked semiconductor package is formed by forming a semiconductor wafer having a plurality of semiconductor chips with chip pads on their upper sides, where the chips are arranged in pairs; sawing the wafer along edges of the semiconductor chips; adhering a bonding tape to adjacent pairs of the semiconductor chips, wherein conductive interconnections on the bonding tape electrically couple corresponding chip pads of adjacent chips; cutting the bonding tape so that only adjacent pairs of the chips remain attached to one another; and stacking the adjacent pairs of semiconductor chips so that the upper sides of the chips are substantially parallel. The method may include an additional step of adhering a plurality of solder balls on the bonding tape to serve as external leads of the package. Further, the adjacent pairs of semiconductor chips may be attached to opposite sides of a heat conducting plate which serves to dissipate heat generated by the chips.

Abstract: A stacked semiconductor package is formed by forming a semiconductor wafer having a plurality of semiconductor chips with chip pads on their upper sides, where the chips are arranged in pairs; sawing the wafer along edges of the semiconductor chips; adhering a bonding tape to adjacent pairs of the semiconductor chips, wherein conductive interconnections on the bonding tape electrically couple corresponding chip pads of adjacent chips; cutting the bonding tape so that only adjacent pairs of the chips remain attached to one another; and stacking the adjacent pairs of semiconductor chips so that the upper sides of the chips are substantially parallel. The method may include an additional step of adhering a plurality of solder balls on the bonding tape to serve as external leads of the package. Further, the adjacent pairs of semiconductor chips may be attached to opposite sides of a heat conducting plate which serves to dissipate heat generated by the chips.

Abstract: A hydrotreatment process is carried out in at least two steps to hydrotreat a heavy hydrocarbon fraction containing asphaltenes, sulphur-containing impurities and metallic impurities, comprising a first hydrodemetallization step and a subsequent second hydrodesulphurization step, in which the hydrodemetallization step comprises one or more hydrodemetallization zones with fixed beds preceded by at least two hydrodemetallization guard zones (A) and (B), also with fixed beds, disposed in series for cyclic use consisting of successive repetition of steps b) and c) defined below.

Abstract: A component for forming a chip package includes a flat insulative plate. A heat sink is embedded in a central portion of the plate, and a plurality of electrically conductive leads are embedded in peripheral portions of the insulative plate. The leads extend from the top surface of the plate to the bottom surface of the plate, and may also be exposed on side edges of the plate. A recess for receiving a chip may be formed at a central portion of the plate. A chip package utilizing the plate would include a chip mounted on the heat sink, a plurality of wires or solder bumps that connect bond pads on the chip to corresponding leads in the plate, and an insulating material that covers the chip. The insulating material could be a molding resin, or a separate cover plate that covers the chip. In the case of a cover plate, the cover plate may also include an embedded heat sink and embedded leads that can be connected to the embedded leads of the insulative plate.

Abstract: A lead frame and a semiconductor chip package includes supporters on a lead frame paddle and tiebars using the same for preventing undesired paddle bending which may occur due to the pressure of an epoxy molding compound during the molding process. The supports also allow improved heat dissipation during the molding process of the semiconductor chip package and mounting process of the package onto a printed circuit board.

Abstract: A chip package includes a flat plate body or carrier with a plurality of leads embedded therein but exposed at the first and second surfaces, e.g., the top and bottom surfaces, of the plate body. The body has a predetermined shape and may include a recess formed in the upper surface of the body to a prescribed depth. A semiconductor chip is mounted on the upper surface of the plate body or carrier. Metallic bonding wires electrically connect the leads of the body with the bonding pads of the chip, and an epoxy molding compound seals a predetermined portion including the chip, the leads, and the metallic wires. A plurality of like chip packages may be vertically stacked. Instead of epoxy molding, a thin lid having leads similarly embedded therein may be attached to the upper surface of the body.

Abstract: A fabrication method for a chip package includes the steps of forming a first substrate having embedded leads, forming a second substrate with embedded leads and a central aperture therethrough, and attaching the second substrate to the first substrate to form a substrate with a recess for receiving a chip. A chip may then be mounted within the central aperture of the second substrate, on the first substrate, and bond pads of the chip may be attached to leads exposed on one of the first and second substrates with a plurality of metal wires. A resin may be molded over the device to protect the metal wires, the chip, and the leads.

Abstract: A lead frame includes a first lead and a second lead formed on the first lead. The second lead may comprise a conductive adhesive and a conductive layer attached to the first lead. Such leads may be used for a package where the second leads are exposed on the outside exterior of a molded resin and/or a semiconductor chip has a plurality of center chip pads.

Abstract: An improved plate and column type semiconductor package has a heat sink embedded in a plate, which prevents bending of leads or paddle. The plate includes a plurality of leads and a heat sink which are embedded therein, whereby the mounting of the semiconductor package on the printed circuit board is made easier. A semiconductor chip is attached to the heat sink of the plate and a plurality of metal wires electrically connects a plurality of the leads of the plate and the semiconductor chip.