Patents by Inventor Sun Il Kim

Sun Il Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method
    Patent number: 8514027
    Abstract: A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: August 20, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan Wook Baik, Jong Seok Kim, Seong Chan Jun, Sun Il Kim, Jong Min Kim, Chan Bong Jun, Sang Hun Lee
  • CMOS image sensor and method of manufacturing the same
    Patent number: 8507906
    Abstract: Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.
    Type: Grant
    Filed: December 4, 2009
    Date of Patent: August 13, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-ho Park, I-hun Song, Wook Lee, Sang-wook Kim, Sun-il Kim, Jae-chul Park
  • DETECTOR HAVING LARGE AREA AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20130175431
    Abstract: A detector includes a substrate; two first regions, each first region having a linear shape, and the two first regions being separated from each other on the substrate and arranged in parallel; and a pixel region provided between the two first regions and including a plurality of pixels, the pixel region including a plurality of second regions perpendicular to the two first regions, each of the two first regions including a peripheral circuit portion, each of the plurality of second regions including a driver line, and a width of each of the plurality of second regions being equal to or less than a width of a single pixel.
    Type: Application
    Filed: August 7, 2012
    Publication date: July 11, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-kun YOON, Young KIM, Jae-chul PARK, Sang-wook HAN, Sun-il KIM, Chang-jung KIM, Jun-su LEE
  • Wafer-scale X-ray detector and method of manufacturing the same
    Patent number: 8482108
    Abstract: A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer.
    Type: Grant
    Filed: May 17, 2011
    Date of Patent: July 9, 2013
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Jae-chul Park, Chang-jung Kim, Sang-wook Kim, Sun-il Kim
  • Method of manufacturing oxide thin film transistor
    Patent number: 8470634
    Abstract: An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: June 25, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-il Kim, Jae-cheol Lee, I-hun Song, Young-soo Park, Chang-jung Kim, Jae-chul Park
  • Transistors, methods of manufacturing a transistor, and electronic devices including a transistor
    Patent number: 8461597
    Abstract: Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F).
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: June 11, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-il Kim, Jae-chul Park, Sang-wook Kim, Young-soo Park, Chang-jung Kim
  • ACTIVE OPTICAL DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME
    Publication number: 20130135709
    Abstract: An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field.
    Type: Application
    Filed: May 29, 2012
    Publication date: May 30, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sun-il KIM, Jun-hee CHOI
  • Oxide semiconductors and thin film transistors comprising the same
    Patent number: 8450732
    Abstract: Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Ta and Y atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Ta and Y atoms added thereto.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: May 28, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-jung Kim, Sang-wook Kim, Sun-il Kim
  • Transistors, electronic devices including a transistor and methods of manufacturing the same
    Patent number: 8410479
    Abstract: Transistors, electronic devices including a transistor and methods of manufacturing the same are provided, the transistor includes an oxide semiconductor layer (as a channel layer) having compositions that vary in one direction. The channel layer may be an oxide layer including a first element, a second element, and Zn, which are metal elements. The amount of at least one of the first element, the second element, and Zn may change in a deposition direction of the channel layer. The first element may be any one of hafnium (Hf), yttrium (Y), tantalum (Ta), zirconium (Zr), gallium (Ga), aluminum (Al) or combinations thereof. The second element may be indium (In). The channel layer may have a multi-layered structure including at least two layers with different compositions.
    Type: Grant
    Filed: July 13, 2010
    Date of Patent: April 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-wook Kim, Chang-jung Kim, Jae-chul Park, Sun-il Kim
  • METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD
    Publication number: 20130069731
    Abstract: A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface.
    Type: Application
    Filed: September 7, 2012
    Publication date: March 21, 2013
    Inventors: Chan Wook Baik, Seog Woo Hong, Jong Seok Kim, Seong Chan Jun, Sun IL Kim
  • Inverter, method of manufacturing the same, and logic circuit including the inverter
    Patent number: 8383472
    Abstract: Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: February 26, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Huaxiang Yin, I-hun Song, Chang-jung Kim, Sang-wook Kim, Sun-il Kim
  • Semiconductor devices and methods of fabricating the same
    Patent number: 8384439
    Abstract: Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: February 26, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-chul Park, I-hun Song, Young-soo Park, Kee-won Kwon, Chang-jung Kim, Kyoung-kook Kim, Sung-ho Park, Sung-hoon Lee, Sang-wook Kim, Sun-il Kim
  • Transistor, method of manufacturing transistor, and electronic device including transistor
    Patent number: 8354670
    Abstract: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The interface may be treated with plasma by using a fluorine (F)-containing gas, and thus may include fluorine (F). The interface treated with plasma may suppress the characteristic variations of the transistor due to light.
    Type: Grant
    Filed: June 14, 2010
    Date of Patent: January 15, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-wook Kim, Sun-il Kim, Chang-jung Kim, Jae-chul Park
  • Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same
    Patent number: 8324628
    Abstract: Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: December 4, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-il Kim, I-hun Song, Young-soo Park, Dong-hun Kang, Chang-jung Kim, Jae-chul Park
  • SERVER CONNECTION METHOD, INFORMATION PROVIDING METHOD FOR DEVICE, DEVICE ADOPTING THE SAME, CLOUD COMPUTING NETWORK, AND OPERATION METHOD THEREOF
    Publication number: 20120303696
    Abstract: A server connection method for a device provides that if a connection of a client device to a preset file server is not normally performed, requesting connection information of the preset file server by the client device from another client device in the same network, and if the connection information is received by the client device from the other client device, performing the connection to the file server by the client device using the received connection information.
    Type: Application
    Filed: April 5, 2012
    Publication date: November 29, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sun-il KIM
  • 2D/3D switchable integral imaging systems
    Patent number: 8319902
    Abstract: An integral imaging system may include a lens unit. The lens unit may include a first substrate; a second substrate; a first electrode on the first substrate; a second electrode on the second substrate; a liquid crystal layer between the first and second substrates; and an array of nanostructures protruding from the first substrate into the liquid crystal layer. The first and second electrodes may be configured to apply one or more voltages to the array of nanostructures. When the one or more voltages are applied to the array of nanostructures, one or more electric fields may be formed between the array of nanostructures and the second electrode, varying an arrangement of molecules in the liquid crystal layer and forming a refractive index distribution in the liquid crystal layer.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: November 27, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-il Kim, Jong-min Kim
  • OXIDE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20120282734
    Abstract: An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.
    Type: Application
    Filed: July 18, 2012
    Publication date: November 8, 2012
    Inventors: Sun-il KIM, Jae-cheol Lee, I-hun Song, Young-soo Park, Chang-jung Kim, Jae-chul Park
  • Electron beam focusing electrode and electron gun using the same
    Patent number: 8304743
    Abstract: An electron beam focusing electrode and an electron gun using the same may include a plate having a polygonal through-hole; at least a projecting portion formed on at least one side of the through-hole. By using the electron beam focusing electrode, a spreading phenomenon of an electron beam having a rectangular cross section may be reduced. Further, the output of the electron gun may be increased, and electron beams may be easily focused.
    Type: Grant
    Filed: October 10, 2008
    Date of Patent: November 6, 2012
    Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry Foundation
    Inventors: Chan Wook Baik, Anurag Srivastava, Jong Min Kim, Sun Il Kim, Young Mok Son, Gun Sik Park, Jin Kyu So
  • Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method
    Patent number: 8293124
    Abstract: A method of multi-stage substrate etching is provided.
    Type: Grant
    Filed: March 4, 2008
    Date of Patent: October 23, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan Wook Baik, Seog Woo Hong, Jong Seok Kim, Seong Chan Jun, Sun Il Kim
  • ACTIVE OPTICAL DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME
    Publication number: 20120242927
    Abstract: An active optical device and a display apparatus are provided. The active optical device includes a graphene layer; a plurality of carbon nanotubes (CNTs) disposed on the graphene layer; a transparent electrode layer spaced apart from the plurality of CNTs; and a liquid crystal layer disposed between the graphene layer and the transparent electrode layer. The display apparatus includes a display unit for displaying at least one of two-dimensional (2D) and three-dimensional (3D) images; and the active optical device disposed on the display unit.
    Type: Application
    Filed: November 7, 2011
    Publication date: September 27, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Un-jeong Kim, Sun-il Kim, Sang-jin Lee