Patents by Inventor Sun Woo YOON

Sun Woo YOON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240189482
    Abstract: Provided are a method for fabricating a human nasal turbinate-derived mesenchymal stem cell-based 3D bioprinted construct, and a use thereof, wherein the human nasal turbinate-derived mesenchymal stem cell-based, 3D bioprinted construct is advantageous over conventional mesenchymal stem cell-based, 3D bioprinted constructs in that the former can survive and proliferate stably in vitro and/or in vivo and shows high osteogenic differentiation ability as well, therefore is expected to make a great contribution to the practical use of cellular therapeutic agents.
    Type: Application
    Filed: February 21, 2024
    Publication date: June 13, 2024
    Applicant: CATHOLIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
    Inventors: Sung Won KIM, Jung Yeon LIM, Sun Hwa PARK, Byeong Gon YOON, Dong-Woo CHO, Jinah JANG, Seok Won KIM
  • Patent number: 11938247
    Abstract: Provided are a method for fabricating a human nasal turbinate-derived mesenchymal stem cell-based 3D bioprinted construct, and a use thereof, wherein the human nasal turbinate-derived mesenchymal stem cell-based, 3D bioprinted construct is advantageous over conventional mesenchymal stem cell-based, 3D bioprinted constructs in that the former can survive and proliferate stably in vitro and/or in vivo and shows high osteogenic differentiation ability as well, therefore is expected to make a great contribution to the practical use of cellular therapeutic agents.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: March 26, 2024
    Assignee: CATHOLIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
    Inventors: Sung Won Kim, Jung Yeon Lim, Sun Hwa Park, Byeong Gon Yoon, Dong-Woo Cho, Jinah Jang, Seok Won Kim
  • Patent number: 10195266
    Abstract: The present invention relates to a versatile influenza virus vaccine composition using the HA2 helical domain of a hemagglutinin protein, which is an influenza surface protein, and to a pharmaceutical composition for preventing or treating influenza virus infectious diseases. The polypeptide expressed by SEQ ID NO: 3 and the polypeptide expressed by residues 379 to 474 of SEQ ID NO: 1 of the present invention can be mass-produced in E. coli, and effectively produce neutralizing antibodies to various influenza virus subtypes, and thus the polypeptides can be widely utilized as versatile vaccines for influenza virus subtypes and new influenza virus variants.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: February 5, 2019
    Assignee: KOREA RESEARCH INSTITUTE OF BIOSCIENCE AND BIOTECHNOLOGY
    Inventors: Dae Gwin Jeong, Dae Sub Song, Sun Woo Yoon
  • Publication number: 20180133305
    Abstract: The present invention relates to a versatile influenza virus vaccine composition using the HA2 helical domain of a hemagglutinin protein, which is an influenza surface protein, and to a pharmaceutical composition for preventing or treating influenza virus infectious diseases. The polypeptide expressed by SEQ ID NO: 3 and the polypeptide expressed by residues 379 to 474 of SEQ ID NO: 1 of the present invention can be mass-produced in E. coli, and effectively produce neutralizing antibodies to various influenza virus subtypes, and thus the polypeptides can be widely utilized as versatile vaccines for influenza virus subtypes and new influenza virus variants.
    Type: Application
    Filed: September 14, 2015
    Publication date: May 17, 2018
    Applicant: KOREA RESEARCH INSTITUTE OF BIOSCIENCE AND BIOTECHNOLOGY
    Inventors: Dae Gwin JEONG, Dae Sub SONG, Sun Woo YOON
  • Patent number: 8476959
    Abstract: An RF switch circuit includes an RF switch including a first NMOS switch formed on a chip substrate, a switch controller including a second NMOS switch and a PMOS switch formed on the substrate, for controlling the RF switch, and a limiter including a deep N-type well diode formed on the substrate, for limiting an RF signal level transferred from the RF switch to the switch controller through the substrate. The first NMOS switch includes a first N-type terminal formed on a deep N-type well substrate formed on the substrate, for receiving a driving power through a first floating resistor, a P-type terminal for receiving a body power through a second floating resistor, and two second N-type terminals for receiving a gate power through a third floating resistor. The P-type and two second N-type terminals are formed on a P-type substrate formed on the deep N-type well substrate.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: July 2, 2013
    Assignees: Samsung Electro-Mechanics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Yu Sin Kim, Youn Suk Kim, Dong Hyun Baek, Sun Woo Yoon
  • Patent number: 8461919
    Abstract: A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: June 11, 2013
    Assignees: Samsung Electro-Mechanics Co., Ltd, Korea Advanced Institute of Science and Technology
    Inventors: Yu Sin Kim, Youn Suk Kim, Dong Hyun Baek, Sun Woo Yoon
  • Publication number: 20110187417
    Abstract: A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power.
    Type: Application
    Filed: January 28, 2011
    Publication date: August 4, 2011
    Applicants: Samsung Electro-Mechanics Co., Ltd., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Yu Sin KIM, Youn Suk KIM, Dong Hyun BAEK, Sun Woo YOON
  • Publication number: 20110187475
    Abstract: A radio frequency (RF) switch circuit is disclosed to restrict an input signal input to the RF switch from being transferred to a switch controller when a floating resistor is connected to an NMOS FET and a PMOS FET of the RF switch and the switch controller formed through a standard CMOS (Complementary Metal Oxide Semiconductor) process.
    Type: Application
    Filed: January 28, 2011
    Publication date: August 4, 2011
    Applicants: SAMSUNG ELECTRO-MECHANICS CO., LTD., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Yu Sin KIM, Youn Suk KIM, Dong Hyun BAEK, Sun Woo YOON