Patents by Inventor Sun Woon Kim
Sun Woon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180337307Abstract: A semiconductor light emitting device includes a Group-III nitride semiconductor layer on a buffer layer. The buffer layer includes a first layer, a second layer, and a third layer in that order. Each of the first layer, the second layer, and the third layer includes a composition which includes aluminum (Al), nitrogen (N), and oxygen (O). A minimum or average value of an oxygen concentration (atoms/cm3) of each of the first layer and the third layer is greater than an oxygen concentration (atoms/cm3) of the second layer.Type: ApplicationFiled: December 14, 2017Publication date: November 22, 2018Inventors: Jung Taek HAN, Jong Sun MAENG, Jeen Seok CHO, Sun Woon KIM, Yong Hee JEONG
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Patent number: 8455906Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: GrantFiled: November 1, 2011Date of Patent: June 4, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
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Patent number: 8415708Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.Type: GrantFiled: October 25, 2010Date of Patent: April 9, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Je Won Kim, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
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Patent number: 8372669Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.Type: GrantFiled: July 5, 2011Date of Patent: February 12, 2013Assignee: Samsung Electronics., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Hyung Ky Back, Jae Ho Han
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Publication number: 20120043557Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: ApplicationFiled: November 1, 2011Publication date: February 23, 2012Applicant: SAMSUNG LED CO., LTD.Inventors: Sun Woon KIM, Hyun Kyung KIM, Je Won KIM, In Seok CHOI, Kyu Han LEE, Jeong Tak OH
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Patent number: 8071994Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: GrantFiled: November 23, 2009Date of Patent: December 6, 2011Assignee: Samsung LED Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
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Publication number: 20110263061Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.Type: ApplicationFiled: July 5, 2011Publication date: October 27, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Sun Woon KIM, Hyun Kyung Kim, Hyung Ky Back, Jae Ho Han
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Patent number: 7999272Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.Type: GrantFiled: November 18, 2008Date of Patent: August 16, 2011Assignee: Samsung LED Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Hyung Ky Back, Jae Ho Han
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Patent number: 7902544Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.Type: GrantFiled: May 26, 2010Date of Patent: March 8, 2011Assignee: Samsung LED Co., LtdInventors: Sun Woon Kim, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
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Patent number: 7893443Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.Type: GrantFiled: April 26, 2006Date of Patent: February 22, 2011Assignee: Samsung LED Co,; Ltd.Inventors: Je Won Kim, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
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Publication number: 20110037086Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.Type: ApplicationFiled: October 25, 2010Publication date: February 17, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Je Won KIM, Jeong Tak Oh, Dong Joon Kim, Sun Woon Kim, Jin Sub Park, Kyu Han Lee
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Publication number: 20100283070Abstract: There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad.Type: ApplicationFiled: January 11, 2008Publication date: November 11, 2010Inventors: Sun Woon Kim, Dong Joon Kim, Dong Ju Lee
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Patent number: 7829882Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.Type: GrantFiled: October 17, 2006Date of Patent: November 9, 2010Assignee: Samsung LED Co., Ltd.Inventors: Sun Woon Kim, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
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Publication number: 20100230657Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.Type: ApplicationFiled: May 26, 2010Publication date: September 16, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sun Woon KIM, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
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Patent number: 7692201Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: GrantFiled: April 5, 2005Date of Patent: April 6, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sun Woon Kim, Hyun Kyung Kim, Je Won Kim, In Seok Choi, Kyu Han Lee, Jeong Tak Oh
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Patent number: 7687294Abstract: The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.Type: GrantFiled: March 5, 2007Date of Patent: March 30, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Je Won Kim, Sun Woon Kim, Dong Joon Kim
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Publication number: 20100065877Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.Type: ApplicationFiled: November 23, 2009Publication date: March 18, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sun Woon KIM, Hyun Kyung KIM, Je Won KIM, In Seok CHOI, Kyu Han LEE, Jeong Tak OH
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Publication number: 20100006878Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.Type: ApplicationFiled: November 18, 2008Publication date: January 14, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO.,Inventors: Sun Woon KIM, Hyun Kyung Kim, Hyung Ky Back, Jae Ho Han
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Patent number: 7575944Abstract: Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.Type: GrantFiled: August 13, 2007Date of Patent: August 18, 2009Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sun Woon Kim, Seong Ju Park, Ja Yeon Kim, Min Ki Kwon, Dong Ju Lee, Jae Ho Han
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Publication number: 20080293177Abstract: Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.Type: ApplicationFiled: August 13, 2007Publication date: November 27, 2008Inventors: Sun Woon Kim, Seong Ju Park, Ja Yeon Kim, Min Ki Kwon, Dong Ju Lee, Jae Ho Han