Abstract: An object to be processed which has silicon on its surface is loaded in a processing chamber. A plasma of a processing gas containing oxygen gas and nitrogen gas is generated in the processing chamber. The silicon on the surface of the object to be processed is oxidized by the plasma, thereby forming a silicon oxide film.

Abstract: A gate valve includes a plate-shaped valve element which is rectangular-shaped to suit the shape of an opening of a processing chamber and has a size larger than the opening. A hermetically sealing member to perform hermetic sealing by abutting on and being pressed against an outer side of the processing chamber is provided in the valve element. A microwave reflecting mechanism which is formed in a groove shape so as to surround a periphery of the hermetically sealing member is provided at an outer peripheral portion of the hermetically sealing member.

Abstract: A gate valve includes a plate-shaped valve element which is rectangular-shaped to suit the shape of an opening of a processing chamber and has a size larger than the opening. A hermetically sealing member to perform hermetic sealing by abutting on and being pressed against an outer side of the processing chamber is provided in the valve element. A microwave reflecting mechanism which is formed in a groove shape so as to surround a periphery of the hermetically sealing member is provided at an outer peripheral portion of the hermetically sealing member.

Abstract: A substrate processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate. The apparatus includes a gas feed passage configured to supply a process gas into the process container and an exhaust passage configured to exhaust gas from inside the process container. The apparatus further includes a plasma generation mechanism configured to generate plasma of the process gas inside the process container and a metal component to be exposed to plasma inside the process container. The metal component is provided with a silicon film that coats at least a portion thereof to be exposed to plasma and to suffer an intense electric filed generated thereabout.

Abstract: A gate valve includes a plate-shaped valve element which is rectangular-shaped to suit the shape of an opening of a processing chamber and has a size larger than the opening. A hermetically sealing member to perform hermetic sealing by abutting on and being pressed against an outer side of the processing chamber is provided in the valve element. A microwave reflecting mechanism which is formed in a groove shape so as to surround a periphery of the hermetically sealing member is provided at an outer peripheral portion of the hermetically sealing member.

Abstract: An object to be processed which has silicon on its surface is loaded in a processing chamber. A plasma of a processing gas containing oxygen gas and nitrogen gas is generated in the processing chamber. The silicon on the surface of the object to be processed is oxidized by the plasma, thereby forming a silicon oxide film.

Abstract: A substrate table includes a substrate table main body provided with a heater embedded therein and having an upper surface serving as a heating face for heating a target substrate, and lifter pins inserted in the substrate table main body and configured to be moved up and down. Recessed portions are formed in the heating face of the substrate table main body at positions corresponding to the lifter pins and have a bottom lower than the heating face. Each of the lifter pins includes a lifter pin main body and a head portion formed at a distal end of the lifter pin main body and having a diameter larger than the lifter pin main body, the head portion being formed to correspond to each recessed portion and to be partly accommodated in the recessed portion. The head portion has a head portion upper end for supporting the target substrate and a head portion lower surface opposite to the head portion upper end.

Abstract: A gate valve includes a plate-shaped valve element which is rectangular-shaped to suit the shape of an opening of a processing chamber and has a size larger than the opening. A hermetically sealing member to perform hermetic sealing by abutting on and being pressed against an outer side of the processing chamber is provided in the valve element. A microwave reflecting mechanism which is formed in a groove shape so as to surround a periphery of the hermetically sealing member is provided at an outer peripheral portion of the hermetically sealing member.

Abstract: A gas is supplied to a second chamber so that the pressure in the second chamber is raised to a predetermined level. A communication passage is provided for internally connecting the first and second chambers. When the pressure in the first chamber attains the predetermined level, the gas is allowed to flow from the second chamber into the first chamber through the communication passage. A gas flow can be checked when an open-close door is opened to connect the chambers. Thus, there is no substantial gas flow, so that particles can be prevented from being flung up.