Abstract: An automated system for, and method of estimating ring oscillator reliability and testing AC response of a device under test (DUT). In one embodiment, the system includes: (1) a DUT board that accepts, and allows electrical communication with, a plurality of DUTs, (2) a power source, couplable to the DUT board, that provides AC power of controllable characteristics to the plurality of DUTs and (3) an automated switching matrix, couplable between the DUT board and a circuit analyzer, that allows the circuit analyzer to analyze ring oscillators and predetermined portions of the plurality of DUTs at predetermined times as the power source provides the power thereto.

Abstract: A semiconductor device having trap sites passivated with deuterium has enhanced immunity to hot carrier effects. The trap sites which are passivated with deuterium are encapsulated beneath a barrier film and are therefore resistant to having the deuterium diffuse away from the trap sites during subsequent high temperature processing operations.

Abstract: A NMOSFET semiconductor device is formed having an LDD structure by simultaneous co-implantation of arsenic and phosphorous to form an N− layer. The co-implantation is performed subsequent to the formation of the gate structure and a thin (100 Å-300 Å) gate spacer but prior to the implantation of a highly doped N+ source/drain.

Abstract: The present invention provides a method of determining a trap density of a semiconductor substrate/dielectric interface. In one embodiment, the method comprises measuring a current within a semiconductor substrate resulting from a flow of carriers from traps located near the interface, wherein the measured current is a function of the number of traps located at the interface, and determining the trap density as a function of the measured current.

Abstract: An automated system for, and method of estimating ring oscillator reliability and testing AC response of a device under test (DUT). In one embodiment, the system includes: (1) a DUT board that accepts, and allows electrical communication with, a plurality of DUTs, (2) a power source, couplable to the DUT board, that provides AC power of controllable characteristics to the plurality of DUTs and (3) an automated switching matrix, couplable between the DUT board and a circuit analyzer, that allows the circuit analyzer to analyze ring oscillators and predetermined portions of the plurality of DUTs at predetermined times as the power source provides the power thereto.

Abstract: The present invention provides a method of using a getter layer on a semiconductor substrate having a first metal stack formed thereon to improve metal to metal contact resistance. The method comprises the steps of forming a getter layer, which may be titanium, on the first metal stack, wherein the getter layer has a higher affinity for oxygen or a higher getter capability than the first metal stack, substantially removing the getter layer by exposing the getter layer to radiation, and forming a second metal stack, which in an advantageous embodiment may also be titanium, on the first metal stack.

Abstract: A process sequence for forming a semiconductor device utilizes a passivation annealing process using deuterium which enhances immunity to hot carrier effects and extends device lifetime. The process sequence is carried out prior to the introduction of metal conductive films to the device. The process sequence includes a three-step passivation, de-passivation, re-passivation sequence and utilizes a barrier film to encapsulate deuterium molecules in the vicinity of a gate oxide, during the de-passivation operation.

Abstract: The present invention provides a method of using a getter layer on a semiconductor substrate having a first metal stack formed thereon to improve metal to metal contact resistance. The method comprises the steps of forming a getter layer, which may be titanium, on the first metal stack, wherein the getter layer has a higher affinity for oxygen or a higher getter capability than the first metal stack, substantially removing the getter layer by exposing the getter layer to radiation, and forming a second metal stack, which in an advantageous embodiment may also be titanium, on the first metal stack.