Abstract: Provided is a frequency multiplier including a delay circuit, an XOR gate, and a control circuit and a method of operating such a frequency multiplier to adjust the duty cycle of a clock signal. During operation of the frequency multiplier the delay circuit receives a first clock signal and generates a delayed clock signal. The XOR gate receives the first clock signal and the delayed clock signal, performs an XOR operation on the received signals and outputs a second clock signal that has a frequency that is a multiple of the first clock signal. The control circuit monitors the phase difference between the first clock signal and the delayed clock signal and outputs a control signal corresponding to the detected phase difference to the delay circuit to adjust the time delay applied to the first clock signal by the delay circuit.

Abstract: A silicon-on-insulator (SOI) integrated circuit and a method of fabricating the SOI integrated circuit are provided. At least one isolated transistor active region and a body line are formed on an SOI substrate. The transistor active region and the body line are surrounded by an isolation layer which is in contact with a buried insulating layer of the SOI substrate. A portion of the sidewall of the transistor active region is extended to the body line. Thus, the transistor active region is electrically connected to the body line through a body extension. The body extension is covered with a body insulating layer. An insulated gate pattern is formed over the transistor active region, and one end of the gate pattern is overlapped with the body insulating layer.

Abstract: A processor having a cache memory structure which improves an operation speed of the processor and a method of managing cache memory of the processor are provided. The cache memory is divided into a cache memory for normal programs which stores instructions required for running normal programs and a cache memory for exception programs. An instruction register fetches and stores instructions from one of the cache memories according to the type of program currently running. The method includes dividing the cache memory into a cache memory for normal programs and a cache memory for exception programs, storing instructions and/or data for running the normal and exception programs in their respective cache memories, determining a type of a currently running program, fetching instructions from either cache memory according to the type of program currently running, and inputting the fetched instructions to the instruction register.

Abstract: A silicon-on-insulator (SOI) integrated circuit and a method of fabricating the SOI integrated circuit are provided. At least one isolated transistor active region and a body line are formed on an SOI substrate. The transistor active region and the body line are surrounded by an isolation layer which is in contact with a buried insulating layer of the SOI substrate. A portion of the sidewall of the transistor active region is extended to the body line. Thus, the transistor active region is electrically connected to the body line through a body extension. The body extension is covered with a body insulating layer. An insulated gate pattern is formed over the transistor active region, and one end of the gate pattern is overlapped with the body insulating layer.

Abstract: A silicon-on-insulator (SOI) integrated circuit and a method of fabricating the SOI integrated circuit are provided. At least one isolated transistor active region and a body line are formed on an SOI substrate. The transistor active region and the body line are surrounded by an isolation layer which is in contact with a buried insulating layer of the SOI substrate. A portion of the sidewall of the transistor active region is extended to the body line. Thus, the transistor active region is electrically connected to the body line through a body extension. The body extension is covered with a body insulating layer. An insulated gate pattern is formed over the transistor active region, and one end of the gate pattern is overlapped with the body insulating layer.

Abstract: A silicon-on-insulator (SOI) integrated circuit and a method of fabricating the SOI integrated circuit are provided. At least one isolated transistor active region and a body line are formed on an SOI substrate. The transistor active region and the body line are surrounded by an isolation layer which is in contact with a buried insulating layer of the SOI substrate. A portion of the sidewall of the transistor active region is extended to the body line. Thus, the transistor active region is electrically connected to the body line through a body extension. The body extension is covered with a body insulating layer. An insulated gate pattern is formed over the transistor active region, and one end of the gate pattern is overlapped with the body insulating layer.

Abstract: A silicon-on-insulator (SOD integrated circuit and a method of fabricating the SOI integrated circuit are provided. At least one isolated transistor active region and a body line are formed on an SOI substrate. The transistor active region and the body line are surrounded by an isolation layer which is in contact with a buried insulating layer of the SOI substrate. A portion of the sidewall of the transistor active region is extended to the body line. Thus, the transistor active region is electrically connected to the body line through a body extension. The body extension is covered with a body insulating layer. An insulated gate pattern is formed over the transistor active region, and one end of the gate pattern is overlapped with the body insulating layer.

Abstract: An SOI MOSFET having a body contact for preventing the floating body effect is provided. The body contact is a trench perforating a body and a buried oxide layer to a semiconductor substrate. The trench is filled with a conductive material to electrically connect the body to the semiconductor substrate. Impurity ions are implanted into a predetermined region of the semiconductor substrate in contact with the lower portion of the body contact to form an ohmic contact. In the SOI MOSFET, an additional metal interconnection line is not needed to supply power to the body. Also, malfunction of a circuit due to stray capacitance of a contact can be prevented.

Abstract: An SOI MOSFET having a body contact for preventing the floating body effect is provided. The body contact is a trench perforating a body and a buried oxide layer to a semiconductor substrate. The trench is filled with a conductive material to electrically connect the body to the semiconductor substrate. Impurity ions are implanted into a predetermined region of the semiconductor substrate in contact with the lower portion of the body contact to form an ohmic contact. In the SOI MOSFET, an additional metal interconnection line is not needed to supply power to the body. Also, malfunction of a circuit due to stray capacitance of a contact can be prevented.

Abstract: A system and method for executing CISC instructions in a RISC environment are disclosed. A mapper/interface circuit receives CISC instructions which can be from an x86 instruction set, translates them into compatible RISC instructions and forwards them to a RISC microprocessor for execution. The interface circuit is separate from the RISC microprocessor resulting in off-chip hardware translation which improves microprocessor efficiency and simplifies processor and hardware development. The instructions can be translated in groups which are defined by boundaries in the CISC instructions. One group of instructions can be forwarded to the microprocessor for execution while a subsequent group is simultaneously translated. The plug-in mapper/interface circuitry of the invention is plug compatible with an x86 processor such that the circuitry of the invention can be plugged into a standard x86 socket in a standard x86 mother board.

Abstract: Transmission of torque forces between an in put shaft and an output shaft is provided in an apparatus whereby the axis of the input shaft and the output shaft may be displaced 90.degree. in any direction. The input shaft and output shaft are respectively connected to a pair of drive plates, each pair of which is respectively rotatably mounted on a drive ring. The drive rings are rotatably mounted within a case which maintains the rings at a predetermined spaced-apart distance. A yoke assembly is rotatably mounted within each of the input and output drive rings, and are interconnected by a pair of revolving plates which maintain the input and output drive yoke assemblies at respective spaced-apart distances. The input drive ring and the output drive ring are each rotatable about respective predefined parallel axes, and are maintained in a predetermined relationship during rotation about the respective parallel axes by a pair of flexible cables interconnecting the input and output drive rings.