Abstract: Technology for system and method of providing surrounding information of a vehicle which accurately calculates positions of obstacles around the vehicle is provided. The system includes a plurality of image acquisition units installed in the vehicle at a preset interval, an image acquisition unit selector which selects at least two image acquisition units of the plurality of image acquisition units and receives image data from the selected acquisition unit selector, and a control unit which recognizes an obstacle from the image data received from the image acquisition units, calculates a position of the obstacle, and controls the image acquisition unit selector to select the at least two image acquisition units of the plurality of image acquisition units according to information for vehicle speed of the vehicle.

Abstract: Technology for system and method of providing surrounding information of a vehicle which accurately calculates positions of obstacles around the vehicle is provided. The system includes a plurality of image acquisition units installed in the vehicle at a preset interval, an image acquisition unit selector which selects at least two image acquisition units of the plurality of image acquisition units and receives image data from the selected acquisition unit selector, and a control unit which recognizes an obstacle from the image data received from the image acquisition units, calculates a position of the obstacle, and controls the image acquisition unit selector to select the at least two image acquisition units of the plurality of image acquisition units according to information for vehicle speed of the vehicle.

Abstract: The lane deviation warning system is provided, including a traveling lane detection unit for detecting a traveling lane; an operation detection unit connected to at least a sensor and for detecting motion of the vehicle in real time; a controller for controlling to calculate and output a traveling lane deviation time point of the vehicle according to data detected through the traveling lane detection unit and the operation detection unit by setting at least a critical line of the traveling lane based on data detected through the traveling lane detection unit, and to output a corresponding warning signal when the vehicle reaches at least a preset critical line; and a warning device driver for controlling to drive at least one of a first warning means and a second warning means according to a warning signal output from the controller.

Abstract: There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration nonvolatile memory device.

Abstract: There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration nonvolatile memory device.

Abstract: There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration non-volatile memory device.