Patents by Inventor Sung G. Lee

Sung G. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11974841
    Abstract: Respiratory rate can be calculated from an acoustic input signal using time domain and frequency domain techniques. Confidence in the calculated respiratory rate can also be calculated using time domain and frequency domain techniques. Overall respiratory rate and confidence values can be obtained from the time and frequency domain calculations. The overall respiratory rate and confidence values can be output for presentation to a clinician.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: May 7, 2024
    Assignee: MASIMO CORPORATION
    Inventors: Ammar Al-Ali, Walter M. Weber, Anmol B. Majmudar, Gilberto Sierra, Sung Uk Lee, Mohamed Diab, Valery G. Telfort, Marc Pelletier, Boris Popov
  • Patent number: 6057379
    Abstract: A method of preparing polyimide foam produces a foam with excellent flexibility properties. The method of preparing polyimide foam is performed by foaming polyimide percursor which is prepared by employing linear aliphatic diamine and aromatic diamine containing 4 to 12 carbon atoms, at specific weight ration into the esterified reaction mixture prepared by reacting an aromatic carboxylic acid or its anhydride with excess amount of an alcohol compound. The polyimide foam produced by the method described retins superior characteristics of conventional polyimide foams and in addition have excellent flexibility so that it is used widely as adiabatic material, acoustical absorbent and cushion material in the aerospace industry, submarine and express trains etc.
    Type: Grant
    Filed: June 23, 1999
    Date of Patent: May 2, 2000
    Assignee: Korea Research Institute of Chemical Technology
    Inventors: Kil Y. Choi, Jae H. Lee, Sung G. Lee, Mi H. Yi, Seung S. Kim
  • Patent number: 5412331
    Abstract: A word line driving circuit for use in a semiconductor memory device having a first supply voltage terminal to which a pumping voltage higher than a supply voltage supplied from the exterior of a chip is applied and a second supply voltage terminal to which a ground voltage is applied includes a decoding circuit connected between the first supply voltage terminal and second supply voltage terminal, for receiving a decoded row address, a precharge circuit connected to an output terminal of the decoding circuit, a transfer circuit for receiving an output signal of the decoding circuit and a word line boosting signal, and a word line output circuit connected between the first supply voltage terminal and second supply voltage terminal, for driving a word line.
    Type: Grant
    Filed: November 1, 1993
    Date of Patent: May 2, 1995
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong S. Jun, Seung C. Oh, Moon G. Kim, Sung G. Lee