Patents by Inventor Sung Ho Hahm

Sung Ho Hahm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9587000
    Abstract: The present application describes a cell that has integrated into its genome fusion molecule V16-CREB.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: March 7, 2017
    Inventor: Sung Ho Hahm
  • Publication number: 20160115443
    Abstract: The present application describes a cell that has integrated into its genome fusion molecule V16-CREB.
    Type: Application
    Filed: May 12, 2015
    Publication date: April 28, 2016
    Inventor: Sung Ho Hahm
  • Patent number: 7063947
    Abstract: The present application discloses a method for making and selecting a transcription enhancing combined promoter cassette, which includes constructing a library of randomly combined transcription regulatory elements, which comprise double stranded DNA sequence elements that are recognized by transcription regulators; inserting the combined transcription regulatory elements upstream of a minimum promoter followed by a reporter gene in a vector; inserting the vector into a host cell; and then screening for the cells showing enhanced expression of the reporter gene, and identifying the combined promoter cassette in the cell.
    Type: Grant
    Filed: April 8, 2005
    Date of Patent: June 20, 2006
    Assignee: Promogen, Inc.
    Inventor: Sung Ho Hahm
  • Publication number: 20060057610
    Abstract: The present application discloses a method for making and selecting a transcription enhancing combined promoter cassette, which includes constructing a library of randomly combined transcription regulatory elements, which comprise double stranded DNA sequence elements that are recognized by transcription regulators; inserting the combined transcription regulatory elements upstream of a minimum promoter followed by a reporter gene in a vector; inserting the vector into a host cell; and then screening for the cells showing enhanced expression of the reporter gene, and identifying the combined promoter cassette in the cell.
    Type: Application
    Filed: October 31, 2005
    Publication date: March 16, 2006
    Applicant: PROMOGEN, INC.
    Inventor: Sung Ho HAHM
  • Publication number: 20060019396
    Abstract: The present application discloses a MoMSV/MoMLV hybrid-based retroviral vector, wherein gag and pol genes are completely removed.
    Type: Application
    Filed: June 7, 2005
    Publication date: January 26, 2006
    Applicant: TISSUEGENE, INC.
    Inventors: Sung Ho HAHM, Dug Keun LEE, Kwan Hee LEE, Youngsuk YI
  • Publication number: 20050227246
    Abstract: The present application discloses a method for making and selecting a transcription enhancing combined promoter cassette, which includes constructing a library of randomly combined transcription regulatory elements, which comprise double stranded DNA sequence elements that are recognized by transcription regulators; inserting the combined transcription regulatory elements upstream of a minimum promoter followed by a reporter gene in a vector; inserting the vector into a host cell; and then screening for the cells showing enhanced expression of the reporter gene, and identifying the combined promoter cassette in the cell.
    Type: Application
    Filed: April 8, 2005
    Publication date: October 13, 2005
    Inventor: Sung Ho Hahm
  • Patent number: 6656823
    Abstract: Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as AlxGa1-xN and InxGa1-xN. At least one metal layer including a ruthenium component layer is formed on the n type GaN group compound semiconductor layer as a rectifying junction metal. The rectifying junction metal may be used as a gate of a field effect transistor, or an electrode of a Schottky diode. The ruthenium oxide has a low cost, is stable to heat and chemical, and has excellent electric characteristics. The application of the ruthenium oxide to the rectifying junction metal enhances performances, such as UV ray detection, of electronic devices and optical devices operable at an elevated temperature.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: December 2, 2003
    Assignee: LG Electronics Inc.
    Inventors: Suk Hun Lee, Yong Hyun Lee, Jung Hee Lee, Sung Ho Hahm
  • Publication number: 20010034116
    Abstract: Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as AlxGa1-xN and InxGa1-xN. At least one metal layer including a ruthenium component layer is formed on the n type GaN group compound semiconductor layer as a rectifying junction metal. The rectifying junction metal may be used as a gate of a field effect transistor, or an electrode of a Schottky diode. The ruthenium oxide has a low cost, is stable to heat and chemical, and has excellent electric characteristics. The application of the ruthenium oxide to the rectifying junction metal enhances performances, such as UV ray detection, of electronic devices and optical devices operable at an elevated temperature.
    Type: Application
    Filed: March 16, 2001
    Publication date: October 25, 2001
    Applicant: LG Electronics Inc.
    Inventors: Suk Hun Lee, Yong Hyun Lee, Jung Hee Lee, Sung Ho Hahm