Abstract: Provided is a method of improving skin condition by applying to the skin of a subject a cosmetic composition comprising black yeast-derived exosomes as an active ingredient and thereby improving the skin condition, particularly skin elasticity improvement, skin wrinkle reduction, skin texture improvement, skin tone improvement, skin brightness improvement, skin regeneration, skin moisturization, and/or whitening.

Abstract: Provided are a complementary carbon nanotube field effect transistor (CNT-FET) and a manufacturing method thereof. In particular, provided is carbon nanotube-based type conversion technology (p-type?n-type) using a photosensitive polyvinyl alcohol polymer which can be selectively cross-linked at a desired position based on a semiconductor standard process, i.e., photolithography.

Abstract: Provided are a complementary carbon nanotube field effect transistor (CNT-FET) and a manufacturing method thereof. In particular, provided is carbon nanotube-based type conversion technology (p-type?n-type) using a photosensitive polyvinyl alcohol polymer which can be selectively cross-linked at a desired position based on a semiconductor standard process, i.e., photolithography.

Abstract: The present invention provides methods for purifying a layer of carbon nanotubes comprising providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein the precursor layer comprises a mixture of first carbon nanotubes and second carbon nanotubes; selectively heating the first carbon nanotubes; and separating the first carbon nanotubes from the second carbon nanotubes, thereby generating a purified layer of carbon nanotubes. Devices benefiting from enhanced electrical properties enabled by the purified layer of carbon nanotubes are also described.

Abstract: Disclosed is a method of manufacturing an a-IGZO TFT-based transient semiconductor. The method includes (a) stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer; (b) forming a PECVD layer on the nickel thin layer; (c) patterning the PECVD layer after setting a gate area and depositing a metallic layer; (d) lifting off the metallic layer to form a gage metallic thin layer and depositing a gage insulating layer on the gate metallic thin layer; (e) depositing an a-IGZO layer on the gate insulating layer; (f) etching an active area and the gate insulating layer; (g) forming a source electrode and a drain electrode and attaching a thermal release tape on the source electrode and the drain electrode; (h) delaminating the nickel thin layer; (i) performing transcription on a polyvinyl alcohol thin layer after etching the nickel thin layer; and (j) detaching the tape.

Abstract: A resistive random access memory device having a nano-scale tip and a nanowire is provided. A memory array using the same also is provided and fabrication method thereof. A technique is provided for forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate and a top electrode being formed of a nanowire and a technique forming a resistive random access memory device at a location intersected with each other in order that an area of each memory cell is minimized and that an electric field is focused on the tip of the bottom electrode across the top electrode.

Abstract: A resistive random access memory device having a nano-scale tip and a nanowire is provided. A memory array using the same also is provided and fabrication method thereof. A technique is provided for forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate and a top electrode being formed of a nanowire and a technique forming a resistive random access memory device at a location intersected with each other in order that an area of each memory cell is minimized and that an electric field is focused on the tip of the bottom electrode across the top electrode.

Abstract: The present invention provides methods for purifying a layer of carbon nanotubes comprising providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein the precursor layer comprises a mixture of first carbon nanotubes and second carbon nanotubes; selectively heating the first carbon nanotubes; and separating the first carbon nanotubes from the second carbon nanotubes, thereby generating a purified layer of carbon nanotubes. Devices benefiting from enhanced electrical properties enabled by the purified layer of carbon nanotubes are also described.

Abstract: The present invention provides methods for purifying a layer of carbon nanotubes comprising providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein the precursor layer comprises a mixture of first carbon nanotubes and second carbon nanotubes; selectively heating the first carbon nanotubes; and separating the first carbon nanotubes from the second carbon nanotubes, thereby generating a purified layer of carbon nanotubes. Devices benefiting from enhanced electrical properties enabled by the purified layer of carbon nanotubes are also described.

Abstract: A method of fabricating a transient semiconductor based on a single-wall nanotube includes stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer on the thermal oxide layer, depositing an oxide layer on the nickel thin layer, depositing a metallic layer on the oxide layer, and patterning the metallic layer to form a gate electrode, depositing a gate insulating layer on the gate electrode, changing a surface of the gate insulating layer into a hydrophilic surface, and washing and drying the gate insulting layer, coating a single-wall nanotube on the hydrophilic surface of the gate insulating layer, forming source and drain electrodes by forming a contact opening with respect to the gate insulating layer, attaching a thermal release tape after removing a surrounding single-wall nanotube, performing a transfer onto a polyvinyl alcohol thin layer after etching the nickel thin layer, and releasing the thermal release.

Abstract: A method of fabricating a transient semiconductor based on a single-wall nanotube includes stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer on the thermal oxide layer, depositing an oxide layer on the nickel thin layer, depositing a metallic layer on the oxide layer, and patterning the metallic layer to form a gate electrode, depositing a gate insulating layer on the gate electrode, changing a surface of the gate insulating layer into a hydrophilic surface, and washing and drying the gate insulting layer, coating a single-wall nanotube on the hydrophilic surface of the gate insulating layer, forming source and drain electrodes by forming a contact opening with respect to the gate insulating layer, attaching a thermal release tape after removing a surrounding single-wall nanotube, performing a transfer onto a polyvinyl alcohol thin layer after etching the nickel thin layer, and releasing the thermal release.

Abstract: Disclosed is a method of manufacturing an a-IGZO TFT-based transient semiconductor. The method includes (a) stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer; (b) forming a PECVD layer on the nickel thin layer; (c) patterning the PECVD layer after setting a gate area and depositing a metallic layer; (d) lifting off the metallic layer to form a gage metallic thin layer and depositing a gage insulating layer on the gate metallic thin layer; (e) depositing an a-IGZO layer on the gate insulating layer; (f) etching an active area and the gate insulating layer; (g) forming a source electrode and a drain electrode and attaching a thermal release tape on the source electrode and the drain electrode; (h) delaminating the nickel thin layer; (i) performing transcription on a polyvinyl alcohol thin layer after etching the nickel thin layer; and (j) detaching the tape.

Abstract: The present invention provides methods for purifying a layer of carbon nanotubes comprising providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein the precursor layer comprises a mixture of first carbon nanotubes and second carbon nanotubes; selectively heating the first carbon nanotubes; and separating the first carbon nanotubes from the second carbon nanotubes, thereby generating a purified layer of carbon nanotubes. Devices benefiting from enhanced electrical properties enabled by the purified layer of carbon nanotubes are also described.

Abstract: A resistive random access memory device having a nano-scale tip and a nanowire is provided. A memory array using the same also is provided and fabrication method thereof. A technique is provided for forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate and a top electrode being formed of a nanowire and a technique forming a resistive random access memory device at a location intersected with each other in order that an area of each memory cell is minimized and that an electric field is focused on the tip of the bottom electrode across the top electrode.

Abstract: An acrylate-aromatic vinyl-vinyl cyanide resin composition having thermochromic resistance at high temperatures is provided. The resin composition includes: (A) about 20 to about 50% by weight of acrylic graft copolymer; (B) about 20 to about 50% by weight of two types of aromatic vinyl-vinyl cyanide copolymers with different molecular weights; and (C) about 30 to about 50% by weight of alpha-methyl styrene terpolymer.

Abstract: A thermoplastic resin composition comprises: (A) a graft copolymer resin comprising a core comprising a rubber polymer; and a shell formed by graft polymerization of acrylic acid alkyl ester monomer and/or methacrylic acid alkyl ester monomer, unsaturated nitrile monomer, and aromatic vinyl monomer on the surface of the core; (B) a non-graft copolymer resin comprising a copolymer which is formed by polymerizing acrylic acid alkyl ester monomer and/or methacrylic acid alkyl ester monomer, aromatic vinyl monomer, and unsaturated nitrile monomer; and a (co)polymer which is formed by polymerizing acrylic acid alkyl ester monomer, methacrylic acid alkyl ester monomer or a combination thereof; and (C) a siloxane impact reinforcing agent. The composition can have excellent impact strength and scratch resistance, and exhibits reduced or no cloudy white phenomenon at a low temperature.

Abstract: The present invention provides a thermoplastic resin composition that can have improved scratch resistance comprising: (A) about 10 to about 20% by weight of a rubber modified aromatic vinyl graft copolymer resin; (B) about 30 to about 50% by weight of polymethylmethacrylate (PMMA) resin; and (C) about 40 to about 60% by weight of an aromatic vinyl copolymer resin including about 5 to about 50% by weight of a (meth)acrylate alkyl ester. The thermoplastic resin composition of the present invention can have a good balance of various properties such as scratch resistance, impact strength, colorability, gloss, and injection molding properties.

Abstract: Provided are a thermoplastic resin composition that includes (A) about 60 to about 95 wt % of a base resin including (A-1) polyalkyl(meth)acrylate resin and (A-2) a vinyl-based copolymer; and (B) about 5 to about 40 wt % of a core-shell structured copolymer including a polymer of at least two compounds selected from an aromatic vinyl compound, a vinyl cyanide compound, and an acrylic-based compound, grafted on a rubbery polymer, and a molded product using the same.

Abstract: A flame retardant thermoplastic resin composition according to the present invention comprises (A) about 100 parts by weight of rubber modified aromatic vinyl copolymer resin; (B) about 0.1 parts by weight to about 10 parts by weight of a matting agent, based on about 100 parts by weight of the rubber modified aromatic vinyl copolymer resin (A); and (C) about 19 parts by weight to about 23 parts by weight of a brominated flame retardant, based on about 100 parts by weight of the rubber modified aromatic vinyl copolymer resin (A). The composition can have excellent impact strength and low-gloss property.

Abstract: The present invention provides a thermoplastic resin composition that can have improved scratch resistance comprising: (A) about 10 to about 20% by weight of a rubber modified aromatic vinyl graft copolymer resin; (B) about 30 to about 50% by weight of polymethylmethacrylate (PMMA) resin; and (C) about 40 to about 60% by weight of an aromatic vinyl copolymer resin including about 5 to about 50% by weight of a (meth)acrylate alkyl ester. The thermoplastic resin composition of the present invention can have a good balance of various properties such as scratch resistance, impact strength, colorability, gloss, and injection molding properties.