Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A display device includes: a backlight unit, a camera hole penetrating the backlight unit, a camera in the camera hole, a liquid crystal panel on the backlight unit, the liquid crystal panel including a transparent portion on the camera hole, and at least one light-blocking member in the camera hole, the at least one light-blocking member being configured to reduce one or more of: light leakage from the camera hole and introduction of impurities into the camera hole.

Abstract: A collision safety control system includes a memory storing a collision safety model having a deep learning-based collision safety control logic. The collision safety control system also includes a processor electrically connected to the memory. The processor is configured to, in accordance with the collision safety control logic, train, based on at least one signal including pre-collision data and post-collision data, the collision safety model such that the collision safety model outputs a collision type and a required time-to-fire (RTTF) of passenger protection equipment corresponding to the at least one signal.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A method for estimating locomotion in virtual reality performed by at least one processor includes measuring a plurality of pressure points according to a user's locomotion using a high-resolution tactile sensor including a plurality of pressure sensors, extracting a plurality of footprint images including the plurality of measured pressure points, clustering the plurality of pressure points into a first set of pressure points corresponding to a left foot and a second set of pressure points corresponding to a right foot, based on the plurality of extracted footprint images, and estimating at least a portion of a locomotion direction and a locomotion speed of the user using a first cluster corresponding to the first set of pressure points and a second cluster corresponding to the second set of pressure points.