Patents by Inventor Sung Hyung Hwang

Sung Hyung Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory device and fabrication method thereof and memory apparatus including thereof
    Patent number: 7719047
    Abstract: A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.
    Type: Grant
    Filed: July 13, 2007
    Date of Patent: May 18, 2010
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Byoung Deog Choi, Jun Sin Yi, Sung Wook Jung, Sung Hyung Hwang
  • Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same
    Patent number: 7550823
    Abstract: A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.
    Type: Grant
    Filed: July 13, 2007
    Date of Patent: June 23, 2009
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Byoung Deog Choi, Jun Sin Yi, Sung Wook Jung, Sung Hyung Hwang
  • NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD THEREOF AND MEMORY APPARATUS INCLUDING THEREOF
    Publication number: 20080121887
    Abstract: A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.
    Type: Application
    Filed: July 13, 2007
    Publication date: May 29, 2008
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Byoung Deog Choi, Jun Sin Yi, Sung Wook Jung, Sung Hyung Hwang
  • NONVOLATILE MEMORY CELL, ARRAY THEREOF, FABRICATION METHODS THEREOF AND DEVICE COMPRISING THE SAME
    Publication number: 20080121888
    Abstract: A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.
    Type: Application
    Filed: July 13, 2007
    Publication date: May 29, 2008
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Byoung Deog CHOI, Jun Sin Yi, Sung Wook Jung, Sung Hyung Hwang