Abstract: Provided herein are variant human IL18 proteins including proteins and constructs including such. Various variant IL18 proteins with modifications to reduce heterogeneity and/or reduce affinity/potency and/or improve stability and/or improve production yield are also described. Also provided are IL18-Fc fusion proteins that include an empty-Fc domain and an IL18 protein connected to another Fc domain. Also provided herein are IL18Fc fusion proteins that bind CD3 and a tumor target antigen.

Abstract: An apparatus for determining a short cut-in target includes a processor, wherein the processor is configured to generate a ROI on a grid map by use of sensor information provided from a Light Detection and Ranging (LiDAR) sensor mounted on a vehicle, sets a cut-in reference line based on a sensor information on the generated grid map, and is configured to control to adjust a dynamic object fusion (DOF) track based on the set cut-in reference line.

Abstract: A display device prevents cracks from spreading to an active area. The display device includes a substrate including an active area and a non-active area having a bending area, a thin-film transistor disposed in the active area, a light-emitting element disposed in the active area and connected to the thin-film transistor, an encapsulation layer disposed on the light-emitting element, a touch sensor disposed on the encapsulation layer, a touch pad disposed in the non-active area, a first routing line connecting the touch sensor to the touch pad via a second routing line in the bending area, and a crack prevention layer disposed on the second routing line in the bending area. Thus, the crack prevention layer is capable of preventing the occurrence of cracks in the bending area BA, thus preventing cracks from spreading to the active area AA.

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Abstract: The present invention relates to a composition for preventing or treating transplantation rejection or a transplantation rejection disease, comprising a novel compound and a calcineurin inhibitor. A co-administration of the present invention 1) reduces the activity of pathogenic Th1 cells or Th17 cells, 2) increases the activity of Treg cells, 3) has an inhibitory effect against side effects, such as tissue damage, occurring in the sole administration thereof, 4) inhibits various pathogenic pathways, 5) inhibits the cell death of inflammatory cells, and 6) increases the activity of mitochondria, in an in vivo or in vitro allogenic model, a transplantation rejection disease model, a skin transplantation model, and a liver-transplanted patient, and thus inhibits transplantation rejection along with mitigating side effects possibly occurring in the administration of a conventional immunosuppressant alone.

Abstract: Provided herein are novel CLDN6 binding domains, and anti-CLDN6×anti-CD3 antibodies that include such CLDN6 binding domains. Also provided herein are methods of using such antibodies for the treatment of CLDN6-associated cancers.

Abstract: Disclosed are a system and method for automatically evaluating an essay. The system includes a structure analysis module configured to divide learning data and learner essay text in a predetermined structure analysis unit, generate structure tagging information for each structure analysis unit, and structure the learning data and the learner essay text by attaching the structure tagging information to the learning data and the learner essay text, a learning module configured to generate an essay evaluation model through learning by using essay text that is included in the structured learning data and the structure tagging information as an input value and using an evaluation score that is included in the structured learning data as a label, and an evaluation module configured to generate essay evaluation results using the essay evaluation model.

Abstract: A thin film transistor array substrate including a substrate including an active area and a non-active area, and a first thin film transistor disposed on the substrate while including a first oxide semiconductor pattern, a first gate electrode overlapping with the first oxide semiconductor pattern, a first gate insulating layer interposed between the first oxide semiconductor pattern and the first gate electrode, a first source electrode and a first drain electrode disposed on and connected to the first oxide semiconductor pattern, and a first light shielding pattern disposed under the first oxide semiconductor pattern and electrically connected to one of the first source electrode and the first drain electrodes. The first gate electrode includes a first portion maintaining a first parasitic capacitance and a second portion maintaining a second parasitic capacitance smaller than the first parasitic capacitance, together with the first oxide semiconductor pattern.

Abstract: A ceramic electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell surrounding at least a portion of the core, and a second shell surrounding at least a portion of the first shell, and a concentration of a rare earth element included in the second shell is more than 1.3 times to less than 3.8 times a concentration of a rare earth element included in the first shell.

Abstract: The present invention is directed to novel heterodimeric antibodies.

Abstract: A semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: A fuser includes a pressure roller to rotate, a heating belt to form a fixing nip with the pressure roller; and bushings at each end of the heating belt, respectively, to support the heating belt. Each of the bushings includes a side wall outside the each end of the heating belt, and a support member in a direction toward the heating belt with respect to the side wall to support an inner surface of the heating belt, where the support member includes a protruding region downwardly inclined in a direction toward the side wall.

Abstract: The present invention is directed to novel heterodimeric antibodies.

Abstract: The present invention is directed to novel heterodimeric antibodies.

Abstract: Provided herein are novel CLDN6 binding domains, and anti-CLDN6×anti-CD3 antibodies that include such CLDN6 binding domains. Also provided herein are methods of using such antibodies for the treatment of CLDN6-associated cancers.

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.

Abstract: The present invention is directed to antibodies, including novel antigen binding domains and heterodimeric antibodies, that bind Ectonucleotide pyrophosphatase/phosphodiesterase family member 3 (ENPP3).