Abstract: Provided are a lead frame, a semiconductor package, and a method of manufacturing the lead frame and the semiconductor package. The lead frame includes: a die pad on which a semiconductor chip is installable; a plurality of lead patterns formed around a circumference of the die pad; an insulating organic material filling etching spaces interposed between the die pad and the lead patterns and structurally supporting the die pad and the lead patterns; and a pre-plating layer formed on both upper and lower surfaces of the die pad and the lead patterns.

Abstract: A method for transferring variable isochronous data and an apparatus therefor are provided. The method for transferring variable isochronous data includes the steps of (a) determining isochronous transfer to be terminated when the bus is in an idle state for a time interval which is larger than an isochronous gap period, (b) detecting a residual gap having a time interval which is larger than the time interval of an isochronous gap and smaller than the time interval of a subaction gap, (c) checking whether bandwidth for the transfer of isochronous data remains when the residual gap is detected in the step (b), and (d) transferring the isochronous data when it is determined that the bandwidth remains in the step (c).

Abstract: The structure of a cosmetics container capable of discharging content in a container main body at a constant amount is provided. The structure of the cosmetics container includes a cosmetics accommodating compartment; a pumping means provided in the cosmetics accommodating compartment and having a moving valve, which is operated by a button and has a content inlet switched to open by a ring-shaped packing; a screw element rotated by the pumping means; a latched gear for blocking the screw element from being rotated in reverse; and a piston for pressing the content out of the main body as it is elevated by the rotation of the screw element.

Abstract: A lead frame for a semiconductor package having not only high molding resin adhesiveness and a low delamination problem under a severe moisture absorbing atmosphere but also high interface adhesiveness and solder wettability of an Au wire, and a method of manufacturing the lead frame are provided. The lead frame includes a base metal layer formed of a metal and a plurality of plating layers having different components formed on at least a surface of the base metal layer, wherein the plating layers include, a Ni plating layer deposited on at least a surface of the base metal layer and formed of Ni or an Ni alloy, a Pd plating layer stacked on at least a surface of the Ni plating layer and formed of Pd or a Pd alloy, and a protection plating layer stacked on at least a surface of the Pd plating layer and formed of Au or an Au alloy, wherein the Ni plating layer is formed to have a predetermined a thickness and a surface coarseness.

Abstract: A method for distributing stream data based on a multi-path scheme using Transmission Control Protocol (TCP) and a computer-readable recording medium for storing a program that implements the method are disclosed. The method includes the steps of: requesting an input unit to transmit stream data; receiving the stream data generated in the input unit based on TCP scheme; assigning the received stream data to a specific channel; confirming a relay that requests stream data transmission of the specific channel; transmitting the stream data to one or more relays that request stream data transmission of the specific channel according to transmission control information of a controller; and receiving the stream data of the specific channel from one of neighboring relays.

Abstract: A method for transferring variable isochronous data and an apparatus therefor are provided. The method for transferring variable isochronous data includes the steps of (a) determining isochronous transfer to be terminated when the bus is in an idle state for a time interval which is larger than an isochronous gap period, (b) detecting a residual gap having a time interval which is larger than the time interval of an isochronous gap and smaller than the time interval of a subaction gap, (c) checking whether bandwidth for the transfer of isochronous data remains when the residual gap is detected in the step (b), and (d) transferring the isochronous data when it is determined that the bandwidth remains in the step (c).

Abstract: A method for transferring variable isochronous data and an apparatus therefor are provided. The method for transferring variable isochronous data includes the steps of (a) determining isochronous transfer to be terminated when the bus is in an idle state for a time interval which is larger than an isochronous gap period, (b) detecting a residual gap having a time interval which is larger than the time interval of an isochronous gap and smaller than the time interval of a subaction gap, (c) checking whether bandwidth for the transfer of isochronous data remains when the residual gap is detected in the step (b), and (d) transferring the isochronous data when it is determined that the bandwidth remains in the step (c).

Abstract: A lead frame for a semiconductor package having not only high molding resin adhesiveness and a low delamination problem under a severe moisture absorbing atmosphere but also high interface adhesiveness and solder wettability of an Au wire, and a method of manufacturing the lead frame are provided. The lead frame includes a base metal layer formed of a metal and a plurality of plating layers having different components formed on at least a surface of the base metal layer, wherein the plating layers include, a Ni plating layer deposited on at least a surface of the base metal layer and formed of Ni or an Ni alloy, a Pd plating layer stacked on at least a surface of the Ni plating layer and formed of Pd or a Pd alloy, and a protection plating layer stacked on at least a surface of the Pd plating layer and formed of Au or an Au alloy, wherein the Ni plating layer is formed to have a predetermined a thickness and a surface coarseness.

Abstract: A method of extending channels for the IEEE 1394 serial bus is provided. The method for extending channels of the IEEE 1394 serial bus in a channel assignment through an isochronous resource manager (IRM) of an IEEE 1394 node, wherein the node includes a CP register for physical channels and a CE register for extended channels which have the same format as the format of a CA register which holds information on channels assigned by the IRM, includes: checking whether all the channels of the IRM are used and there is available bandwidth; setting the value obtained by adding 64 to the value of the CP register, to the CE register when all the channels are used and there is available bandwidth; and generating a packet by setting a tag field value of a packet as a predetermined value when the value is set to the CE register. According to the present invention, it is possible to solve the shortage of the channels which can occur as the bandwidth increases.

Abstract: A method for transferring variable isochronous data and an apparatus therefor are provided. The method for transferring variable isochronous data includes the steps of (a) determining isochronous transfer to be terminated when the bus is in an idle state for a time interval which is larger than an isochronous gap period, (b) detecting a residual gap having a time interval which is larger than the time interval of an isochronous gap and smaller than the time interval of a subaction gap, (c) checking whether bandwidth for the transfer of isochronous data remains when the residual gap is detected in the step (b), and (d) transferring the isochronous data when it is determined that the bandwidth remains in the step (c).

Abstract: A method for transferring variable isochronous data and an apparatus therefor are provided. The method for transferring variable isochronous data includes the steps of (a) determining isochronous transfer to be terminated when the bus is in an idle state for a time interval which is larger than an isochronous gap period, (b) detecting a residual gap having a time interval which is larger than the time interval of an isochronous gap and smaller than the time interval of a subaction gap, (c) checking whether bandwidth for the transfer of isochronous data remains when the residual gap is detected in the step (b), and (d) transferring the isochronous data when it is determined that the bandwidth for the transfer remains in the step (c).

Abstract: A method for manufacturing a lead frame including the steps of electrocleaning the surface of a thin plate material, electropolishing the electrocleaned thin plate material, removing inclusions on the surface of the electropolished thin plate material, rinsing the inclusion-removed thin plate material with an acidic solution, and forming multi-plated layers on the rinsed material. The lead frame manufactured by the method has 5 or less inclusions each having approximately 1 &mgr;m, on the surface area of 1600 &mgr;m2, which impede a wire bonding property or solder wettability of the lead frame.

Abstract: A lead frame for a semiconductor package and a method for manufacturing the lead frame. In the manufacture of the lead frame, a protective layer is formed with nickel (Ni) or Ni alloy on a metal substrate, an intermediate layer is then formed with palladium (Pd) or Pd alloy on the protective layer. Then, Pd and gold (Au) are alternately plated on the surface of the intermediate layer to form an outermost layer including both Pd and Au particles thereon.

Abstract: A method for manufacturing a lead frame including the steps of electrocleaning the surface of a thin plate material, electropolishing the electrocleaned thin plate material, removing inclusions on the surface of the electropolished thin plate material, rinsing the inclusion-removed thin plate material with an acidic solution, and forming multi-plated layers on the rinsed material. The lead frame manufactured by the method has 5 or less inclusions each having approximately 1 &mgr;m, on the surface area of 1600 &mgr;m2, which impede a wire bonding property or solder wettability of the lead frame.

Abstract: A lead frame plating method including the steps of (a) forming an intermediate layer on the upper surface of a metal substrate, (b) submerging the metal substrate into a plating solution, and (c) forming a passive layer to a thickness of 0.01 to 1.5 microinches on the upper surface of the intermediate layer by applying a modulated current to the plating solution and the metal substrate.