Abstract: A semiconductor memory device and a method for manufacturing the same. The semiconductor memory device may include a substrate, a first lower wire pattern and a first upper wire pattern stacked on the substrate, and spaced apart from each other; a second lower wire pattern and a second upper wire pattern stacked on the substrate, spaced apart from each other, and spaced apart from the first lower and upper wire patterns; a first gate line surrounding the first lower wire pattern and the first upper wire pattern; a second gate line surrounding the second lower wire pattern and the second upper wire pattern and spaced apart from the first gate line; a first lower source/drain area; a first upper source/drain area; and a first overlapping contact that electrically connects the first lower source/drain area, the first upper source/drain area and the second gate line to each other.

Abstract: A semiconductor device comprises a substrate, a first active pattern on the substrate and extending in a first direction, a second active pattern extending in the first direction spaced apart from the substrate, a gate electrode extending in a second direction surrounding the first and second active patterns, and a high dielectric film between the first and second active patterns and the gate electrode. The gate electrode includes first and second work function adjusting films surrounding the high dielectric film on the first and second active patterns, and a filling conductive film surrounding the first and second work function adjusting films. The first and second work function adjusting films include first and second work function conductive films, each of which includes a first metal film. A thickness of the first metal film of the first work function conductive film is greater than that of the second work function conductive film.

Abstract: In an embodiment, the present disclosure pertains to an organ-specific wireless optogenetic device. In some embodiments, the device includes an electronic circuit, such that the electronic circuit is configured to harvest and convert radio frequency (RF) energy into optical energy and a tether having a ?LED, where the ?LED illuminates targeted regions in the organ. In an additional embodiment, the present disclosure pertains to a method of treating obesity. In general, the method includes implanting an organ-specific wireless optogenetic device into a subject, activating an RF-power system to produce RF energy, harvesting, by the organ-specific wireless optogenetic device, the RF energy, converting, by the organ-specific wireless optogenetic device, the RF energy into optical energy, illuminating, by the ?LED, targeted regions in the stomach of the subject, and stimulating nerve endings to thereby suppress appetite in the subject.

Abstract: Provided are a dope solution for preparing a polarizing plate protective film by a solution casting method using an acrylic polymer with high thermal resistance and high molecular weight, and a polarizing plate protective film using the same. The polarizing plate protective film using the dope solution according to the present invention has excellent optical properties, high tensile strength, low hygroscopic properties, and high thermal resistance, and thus, has the effects of excellent dimensional stability, and excellent adhesion with a polyvinyl alcohol film.

Abstract: In one aspect, a hyperspectral image measurement device is provided to include: a main body; an illumination module disposed in the main body and including LEDs having different peak wavelengths to irradiate light to a subject; a camera disposed on the main body and receiving light reflected from the subject to acquire an image of the subject; a barrel having a contact surface contacting the subject, the contact surface located to be spaced apart from the illumination module and the camera module by a predetermined distance; and a reference cover located on the contact surface and including a standard reflection layer for reflecting light irradiated from the illumination module toward the camera module.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: In one aspect, a hyperspectral image measurement device is provided to include: a main body; an illumination module disposed in the main body and including LEDs having different peak wavelengths to irradiate light to a subject; a camera disposed on the main body and receiving light reflected from the subject to acquire an image of the subject; a barrel having a contact surface contacting the subject, the contact surface located to be spaced apart from the illumination module and the camera module by a predetermined distance; and a reference cover located on the contact surface and including a standard reflection layer for reflecting light irradiated from the illumination module toward the camera module.

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Abstract: A molded transformer is disclosed. The molded transformer includes a first body case, a second body case engaged with the first body case, an adhesive agent applied to the periphery of the engagement portion between the first and second body cases, coil layers provided inside the first and second body cases and spaced apart from each other at regular intervals, with coil support blocks interposed therebetween, an integral-type coil support engaged with the lower end portion of the second body case in order to support the coil layers, a lower support engaged with the integral-type coil support and seated on the ground, a height adjustment unit engaged with the lower surface of the integral-type coil support while penetrating the lower support in order to adjust the height of the integral-type coil support, and a tap changer provided on the side surfaces of the first and second body cases.

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: The present disclosure relates to an external-use skin preparation composition containing a natural ceramide, a ceramide derivative, and a Hibisci cortex extract, and more specifically, the present disclosure relates to an external-use skin preparation composition containing these ingredients, thereby being effective for enhancing skin moisturizing ability, reducing skin wrinkles, and enhancing elasticity. In addition, the present disclosure relates to use of the composition, and a method for improving skin moisturization, reducing skin wrinkles, and/or improving skin elasticity by using the composition.

Abstract: The present specification relates to a composition for external application to skin with improved solubility and feeling during use, comprising a benzoic acid amide compound, an isomer thereof, a pharmaceutically acceptable salt thereof, a hydrate thereof or a solute that is a solvate thereof, and a first cyclodextrin solubilizing agent.

Abstract: A vFET includes a first impurity region doped with first impurities at an upper portion of the substrate. A first diffusion control pattern is formed on the first impurity region. The first diffusion control pattern is configured to control the diffusion of the first impurities. A channel extends in a vertical direction substantially orthogonal to an upper surface of the substrate. A second impurity region is doped with second impurities on the channel. A second diffusion control pattern is between the channel and the second impurity region. The second diffusion control pattern is configured to control the diffusion of the second impurities. A gate structure is adjacent to the channel.

Abstract: The present invention relates to a cosmetic composition of a multiple emulsion formulation having a lamellar liquid crystal structure, and a method for preparing the same. More particularly, the cosmetic composition is prepared using different single emulsification type emulsions, i.e. a W/O type emulsion and an O/W type emulsion which has a lamellar liquid crystal structure, or using a mixture having constituent ingredients thereof. Thus, the present invention has effects of stably maintaining effective ingredients of the cosmetic composition, and enhancing the feeling of use.

Abstract: The present invention relates to a cosmetic composition using a mannosylerythritol lipid, which is a kind of glycolipid, as a stabilizer in order to prevent kojyl methylenedioxycinnamate, which is an active ingredient having various skin effects such as antiaging, whitening and antioxidation, from causing crystallization inside a dosage form. Even if the cosmetic composition according to the present invention contains a high concentration of an active ingredient, crystal precipitation does not occur in various dosage forms, and thus the functionality of the active ingredient is maximized, skin delivery is increased and the texture during use is improved.

Abstract: According to an embodiment of the present disclosure, a method for operating an electronic device includes displaying a result of recognizing at least one other electronic device as at least one item, and sending a message requesting the at least one other electronic device to output an identifiable signal.

Abstract: A method to transmit and receive a packet in a bridge of a communication system is provided. The method includes receiving a first packet from a first network. The method also includes converting a medium access control (MAC) layer source address of the received first packet into a MAC address of the bridge. The method further includes transmitting the address-converted first packet to a node of a second network.

Abstract: A semiconductor device includes a substrate; a vertical channel structure including a pair of active fins extended in a first direction, perpendicular to an upper surface of the substrate, and an insulating portion interposed between the pair of active fins; an upper source/drain disposed on the vertical channel structure; a lower source/drain disposed below the vertical channel structure and on the substrate; a gate electrode disposed between the upper source/drain and the lower source/drain and surrounding the vertical channel structure; and a gate dielectric layer disposed between the gate electrode and the vertical channel structure. An interval between the gate electrode and the upper source/drain may be smaller than an interval between the gate electrode and the lower source/drain in the first direction.

Abstract: In one aspect, a hyperspectral image measurement device is provided to include: a main body; an illumination module disposed in the main body and including LEDs having different peak wavelengths to irradiate light to a subject; a camera disposed on the main body and receiving light reflected from the subject to acquire an image of the subject; a barrel having a contact surface contacting the subject, the contact surface located to be spaced apart from the illumination module and the camera module by a predetermined distance; and a reference cover located on the contact surface and including a standard reflection layer for reflecting light irradiated from the illumination module toward the camera module.