Abstract: A semiconductor device may include a substrate including a core region, a cell block region, and a peripheral region, which are sequentially arranged in a first direction, and a bit line structure on the cell block region. The bit line structure may include a first bit line and a second bit line, which extend in the first direction and are adjacent to each other in a second direction crossing the first direction, a bit line connector, which electrically connects the first bit line to the second bit line and is adjacent to the peripheral region, and a bit line pad, which is electrically connected to the first bit line and is adjacent to the core region.

Abstract: A semiconductor device includes a substrate including cell and core regions respectively having first and second active patterns having respective, opposing sidewall surfaces at least partially defining a trench therebetween, and a boundary region between the cell and core regions, a device isolation layer on the boundary region to fill the trench, a line structure on the first active pattern and extended from the cell region to the boundary region, and a capping pattern covering an end of the line structure on the boundary region. The device isolation layer includes one or more inner surfaces at least partially defining a recess region, which is adjacent to the end of the line structure, and the capping pattern is extended along the end of the line structure into the recess region. A top surface of the device isolation layer is between the line structure and a bottom surface of the capping pattern.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.

Abstract: The present invention provides a novel tetraphenylnaphthalene derivative, and an organic light emitting device using the same.

Abstract: The present invention provides novel structure of light emitting material and an organic light emitting diode using the same. The light emitting material can serve as a light emitting material alone, and can also serve as a light emitting host in combination with a proper light emitting dopant, or a light emitting dopant in combination with a proper light emitting host, particularly in an organic emitting diode.

Abstract: The present invention provides a novel light emitting material and an organic light emitting device using the same.

Abstract: The present invention provides a novel tetraphenylnaphthalene derivative, and an organic light emitting device using the same.

Abstract: The present invention provides a novel light emitting material and an organic light emitting device using the same.