Patents by Inventor Sung Joon Hwang

Sung Joon Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12006575
    Abstract: Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10?4 g/m2·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: June 11, 2024
    Assignee: LG CHEM, LTD.
    Inventors: Sung Jin Shin, Jang Yeon Hwang, Hee Joon Jeong, Bo Ra Park, Hee Wang Yang
  • Patent number: 11925581
    Abstract: A capsulorhexis device is inserted into an incision site of a cornea to make an incision in an anterior capsule surrounding a crystalline lens. The capsulorhexis device includes a loop having elasticity and conductivity; a moving member having one end fixed and coupled to the loop; an insertion guide configured so that, while the incision is being made in the crystalline lens capsule, a front end thereof is inserted into the incision site of the cornea; and a housing having one end coupled to a rear end of the insertion guide, wherein the loop is housed in the housing and, to make the incision in the crystalline lens capsule, slides in the housing together with the moving member to pass through the insertion guide and be deployed into an anterior chamber of the eye.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: March 12, 2024
    Assignee: TI INC.
    Inventors: Hong Jai Lee, Sung Hyuk Moon, Jae Wook Yang, Seung Jai Lee, Sun Joon Hwang, Hyun Jeong Kang
  • Patent number: 11645024
    Abstract: An example image forming apparatus includes a communication device to communicate with an external apparatus, a printing engine to perform a printing job, and a processor to, based on receiving a printing request for the printing job, perform accounting processing for the printing job, and control the printing engine such that the printing job is performed. The processor, based on an error occurring in the printing job, is to control the communication device to transmit proceeding history information of the printing job and accounting information to another image forming apparatus.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: May 9, 2023
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Hyunsuk Lee, Hayoung Yoon, Sung joon Hwang
  • Publication number: 20220035586
    Abstract: An example image forming apparatus includes a communication device to communicate with an external apparatus, a printing engine to perform a printing job, and a processor to, based on receiving a printing request for the printing job, perform accounting processing for the printing job, and control the printing engine such that the printing job is performed. The processor, based on an error occurring in the printing job, is to control the communication device to transmit proceeding history information of the printing job and accounting information to another image forming apparatus.
    Type: Application
    Filed: January 9, 2020
    Publication date: February 3, 2022
    Inventors: Hyunsuk LEE, Hayoung YOON, Sung joon HWANG
  • Publication number: 20140306280
    Abstract: In the method, a plurality of gate structures may be formed on a substrate and be spaced apart from each other in a first direction. An insulation layer pattern may be formed by performing a chemical vapor deposition process using SiH4 gas as a source gas. The insulation layer pattern may partially define an air gap between the adjacent gate structures. A width of the air gap in the first direction may be about 65% to about 70% of a distance between the adjacent gate structures.
    Type: Application
    Filed: April 1, 2014
    Publication date: October 16, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Je-Dong LEE, Young-Il KIM, Il-Woo KIM, Kwang-Jae LEE, In-Hwa JEON, Sung-Joon HWANG
  • Publication number: 20020195124
    Abstract: A cleaning apparatus of a high-density plasma chemical vapor deposition chamber, and a cleaning method thereof, uniformly and sufficiently supplies a cleaning gas into a chamber to uniformly clean the chamber. The cleaning apparatus includes a chamber, an upper electrode provided in an upper portion of the chamber and applied with radio frequency energy, a lower electrode provided below the upper electrode and applied with radio frequency energy, a chuck provided below the upper electrode and formed thereon with the lower electrode to fix a wafer thereon, and three or more cleaning gas nozzles provided at regular intervals on the sidewall of the chamber around the chuck.
    Type: Application
    Filed: November 19, 2001
    Publication date: December 26, 2002
    Inventors: Kyoung Hwan Chin, Sung Joon Hwang