Patents by Inventor Sung Kge Park

Sung Kge Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor and method of manufacturing the same
    Patent number: 6271064
    Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the gate edge portions. An active region is formed on the surface of the insulating film and the exposed substrate. The active region includes an off-set region, a channel region, a source region, and a drain region.
    Type: Grant
    Filed: November 29, 2000
    Date of Patent: August 7, 2001
    Assignee: LG Semicon Co., Ltd.
    Inventor: Sung Kge Park
  • Thin film transistor and method of manufacturing the same
    Publication number: 20010000074
    Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the gate edge portions. An active region is formed on the surface of the insulating film and the exposed substrate. The active region includes an off-set regions a channel region, a source region, and a drain region.
    Type: Application
    Filed: November 29, 2000
    Publication date: March 29, 2001
    Inventor: Sung Kge Park
  • Thin film transistor and method of manufacturing the same
    Patent number: 6184070
    Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the gate edge portions. An active region is formed on the surface of the insulating film and the exposed substrate. The active region includes an off-set region, a channel region, a source region, and a drain region.
    Type: Grant
    Filed: March 30, 1999
    Date of Patent: February 6, 2001
    Assignee: LG Semicon Co., Ltd.
    Inventor: Sung Kge Park
  • Thin film transistor and method of manufacturing the same
    Patent number: 5903013
    Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the gate edge portions. An active region is formed on the surface of the insulating film and the exposed substrate. The active region includes an off-set region, a channel region, a source region, and a drain region.
    Type: Grant
    Filed: November 18, 1996
    Date of Patent: May 11, 1999
    Assignee: LG Semicon Co., Ltd.
    Inventor: Sung Kge Park