Abstract: A battery pack includes at least one battery module and a pack housing. The pack housing includes: a space formed to accommodate the at least one battery module; a gas inlet configured receive gas generated in the space; a gas discharge channel configured to communicate the gas received through the gas inlet; and a gas outlet formed at an end of the gas discharge channel. The battery pack also includes a gas venting unit having a plate cover configured to seal the gas inlet. The gas venting unit is configured to at least partially rupture when an internal gas pressure of the pack housing increases to or above a first predetermined value. The gas generated in the space is introduced into the gas inlet when the gas venting unit is at least partially ruptured.

Abstract: The present embodiment relates to a light transmission band change unit comprising: a base including a first axis; a blade arranged on the base and including a body, which has a first hole having a lens and an infrared pass filter arranged therein, a second hole having an infrared cut filter arranged therein, and a third hole into which the first axis is inserted; a magnet arranged between the base and the blade; a core coupled with the base and having a coil arranged thereon; and a blade cover including an upper plate arranged on the blade so as to have a fourth hole formed at a position corresponding to the lens, wherein at least a portion of the lens is arranged within the fourth hole.

Abstract: There is provided a method of etching metallic film for a semiconductor device, in which a semiconductor substrate with a metallic film exposed in a film pattern is inserted onto a chuck in a chamber of an electrostatic shielded radio frequency (ESRF) inductive-coupled plasma source, the ESRF inductive-coupled plasma source also including a coil connected to an upper electrode, a lower electrode connected to the chuck, a gas supply assembly, a pressure control assembly and a temperature control assembly. An etching gas is supplied to the chamber at a predetermined etch gas supply rate. Pressure inside the chamber is maintained at a predetermined pressure level. The upper and lower electrodes are powered with predetermined upper and lower powers, respectively, at predetermined upper and lower RFs, respectively. The chamber walls are cooled to a predetermined temperature.

Abstract: A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.