Abstract: The present invention provides a flame retardant resin composition, or more particularly, a flame retardant polypropylene resin composition which comprises polypropylene having improved flow melt characteristics, flame retardants, a flame retardant aid, and a tetrafluoroethylene polymer. The composition of the present invention has high melt tension, without deterioration of the mechanical properties of flame retardant polypropylene, and drastically enhanced characteristics of shape maintenance and a flaming drip during burning.

Abstract: The present invention provides a flame retardant resin composition, or more particularly, a flame retardant polypropylene resin composition which comprises polypropylene having improved flow melt characteristics, flame retardants, a flame retardant aid, and a tetrafluoroethylene polymer. The composition of the present invention has high melt tension, without deterioration of the mechanical properties of flame retardant polypropylene, and drastically enhanced characteristics of shape maintenance and a flaming drip during burning.

Abstract: The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal material and an insulating material on an insulating layer and in a contact hole, wherein the insulating layer being partially etched to form the contact hole, is formed on a semiconductor substrate; and annealing the diffusion barrier layer. Therefore, an object of the present invention is to provide a diffusion barrier layer for a semiconductor device, which is of an amorphous or microcrystalline state and thermodynamically stable even at a high temperature since an insulating material is bonded to a refractory metal material in the diffusion barrier layer.

Abstract: A n anode thin film for a lithium secondary battery having a current collector and an anode active material layer formed thereon, wherein the anode active material layer contains an intermetallic compound of tin (Sn) and nickel (Ni). In particular, the intermetallic compound is Ni3Sn4.

Abstract: A thin film for an anode of a lithium secondary battery having a current collector and an anode active material layer formed thereon is provided. The anode active material layer is a multi-layered thin film formed by stacking a silver (Ag) layer and a silicon-metal (Si-M) layer having silicon dispersed in a base made from metal reacting with silicon while not reacting with lithium. The cycle characteristic of the thin film for an anode can be improved by suppressing the volumetric expansion and shrinkage of Si occurring during charging/discharging cycles. Thus, a lithium secondary battery with improved life characteristics by employing the thin film for an anode, which greatly improves the chemical, mechanical stability of the interface between an electrode and an electrolyte.

Abstract: The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal material and an insulating material on an insulating layer and in a contact hole, wherein the insulating layer being partially etched to form the contact hole, is formed on a semiconductor substrate; and annealing the diffusion barrier layer. Therefore, an object of the present invention is to provide a diffusion barrier layer for a semiconductor device, which is of an amorphous or microcrystalline state and thermodynamically stable even at a high temperature since an insulating material is bonded to a refractory metal material in the diffusion barrier layer.

Abstract: The present invention provides an anode thin film for a lithium secondary battery having a current collector and an anode active material layer formed thereon. Here, the anode active material layer is a multiple-layer thin film comprising a silicon (Si) layer and a silver (Ag) layer or a single-layer thin film comprising silicon (Si) and silver (Ag).