Abstract: A cartridge for mounting on a main body of an aerosol generating device includes: a liquid storage extending in a longitudinal direction of the cartridge to form an outer wall of the cartridge, the liquid storage including a space accommodating a liquid composition therein; a heater that heats the liquid composition accommodated in the liquid storage to generate an aerosol; and a coupling protrusion including an elastic material, the coupling protrusion protruding from an outer surface of the liquid storage and coupling the main body to the cartridge.

Abstract: Provided is a compound of Chemical Formula 1 or 2: wherein: R1 to R4 are each independently hydrogen or deuterium; n1 to n4 are an integer of 1 to 4; L1 and L2 are each independently a direct bond or a substituted or unsubstituted C6-60 arylene; and Ar1 and Ar2 are each independently a substituent of Chemical Formula 3: wherein X1 to X5 are each independently N or C(R5), wherein at least two of X1 to X5 are N; and each R5 is independently hydrogen, deuterium, a substituted or unsubstituted C1-20 alkyl, a substituted or unsubstituted C6-60 aryl, or a substituted or unsubstituted C2-60 heteroaryl containing at least one of N, O and S, or two adjacent R5s combine to form a benzene ring; and an organic light emitting device including the same. The device exhibits significantly superior efficiency and lifespan.

Abstract: Electronic device includes first wireless communication interface; second wireless communication interface; and controller.

Abstract: A transportation head for a microchip transfer device capable of minimizing mechanical and chemical damage to a microchip, a microchip transfer device having same, and a transfer method thereby, and the transportation head includes a head body having a pickup area and a dummy area; a first protruding pin disposed in the pickup area of the head body; and a liquid droplet attached to the first protruding pin.

Abstract: Provided is a fluorine-doped tin oxide support, a platinum catalyst for a fuel cell having the same, and a method for producing the same. Also described is a high electrical conductivity and electrochemical durability by doping fluorine to the tin oxide-based support through an electrospinning process. Thus, while resolving a degradation issue of the carbon support in the conventional commercially available platinum/carbon (Pt/C) catalyst, what is designed is to minimize an electrochemical elution of dopant or tin, which is a limitation of the tin oxide support itself and has excellent performance as a catalyst for a fuel cell.

Abstract: The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.

Abstract: The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.

Abstract: A content providing method of a content providing system is provided. The method includes transmitting identification information in a broadcasting manner from a first electronic device, if the identification information is received, generating user history information based on a receiving record of the identification information, at a second electronic device, transmitting the user history information to a database server from the second electronic device, transmitting the user history information to the first electronic device from the database server, transmitting the user history information to a content server at the first electronic device, transmitting a content associated with the user history information to the first electronic device from the content server, and providing the content to a user of the first electronic device.

Abstract: Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.

Abstract: An electronic device is provided that includes a display displaying an image and a processor electrically connected with the display. The processor is configured to vary a start position of projection, where the image is played based on a resolution of the display and a resolution of the image, and to resize and display a portion of the image which is displayed on the display.

Abstract: An electronic device is provided.

Abstract: Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.

Abstract: A content providing method of a content providing system is provided. The method includes transmitting identification information in a broadcasting manner from a first electronic device, if the identification information is received, generating user history information based on a receiving record of the identification information, at a second electronic device, transmitting the user history information to a database server from the second electronic device, transmitting the user history information to the first electronic device from the database server, transmitting the user history information to a content server at the first electronic device, transmitting a content associated with the user history information to the first electronic device from the content server, and providing the content to a user of the first electronic device.

Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.

Abstract: Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.

Abstract: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: An apparatus and method for managing the layout of a window is provided. The apparatus includes a display unit that displays the window on a screen; the screen is divided into a plurality of display areas; a pointer-position-checking unit that checks the coordinate position of a pointer moved by a user and determines the one display area corresponding to the position of the checked pointer; and a window-size-adjusting unit that moves the window to the one display area where the pointer is positioned and adjusts the size of the window in proportion to the size of the one display area.

Abstract: Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.