Abstract: A method for preparing a positive electrode active material for a secondary battery, includes providing a lithium transition metal oxide; forming a mixture by mixing the lithium transition metal oxide, a coating polymer and carbide; and heat-treating the mixture to form a coating layer including a carbonized coating polymer and carbide on the surface of the lithium transition metal oxide particle.

Abstract: When a three-dimensional image of a specific subject is acquired by means of an infrared camera and an external light (for example, external light such as sunlight at the time of outdoor photography) having a relatively large intensity exists, it is difficult to acquire the image. To this end, the present invention proposes an electronic device for reducing a current peak by adaptively changing optical power and an exposure time of an infrared camera according to the intensity of external light.

Abstract: In one embodiment, the present disclosure relates to a method of preparing a positive electrode active material, which includes mixing a nickel cobalt manganese hydroxide precursor containing nickel in an amount of 60 mol % or more based on a total number of moles of transition metals in the precursor, a lithium-containing raw material, and a doping raw material, and sintering the mixture to prepare a positive electrode active material; a positive electrode active material prepared by the method; and a positive electrode for a lithium secondary battery and a lithium secondary battery, either of which including the positive electrode active material.

Abstract: A method of manufacturing a deposition mask includes preparing a mask-target substrate which has one surface on which a sacrificed layer pattern is formed and comprises a cover area covered by the sacrificed layer pattern and a plurality of exposed areas exposed by the sacrificed layer pattern; forming holes in the exposed areas of the mask-target substrate by emitting laser toward the mask-target substrate; and removing the sacrificed layer pattern, wherein the sacrificed layer pattern has a higher reflectance with respect to the laser than a reflectance of the mask-target substrate.

Abstract: The present invention relates to a positive electrode active material, wherein the positive electrode active material is a lithium transition metal oxide including a first doping element (A) and a second doping element (B), wherein the first doping element is one or more selected from the group consisting of Zr, La, Ce, Nb, Gd, Y, Sc, Ge, Ba, Sn, Sr, Cr, Mg, Sb, Bi, Zn, and Yb, the second doping element is one or more selected from the group consisting of Al, Ta, Mn, Se, Be, As, Mo, V, W, Si, and Co, and a weight ratio (A/B ratio) of the first doping element to the second doping element is 0.5 to 5.

Abstract: A method of controlling a fuel injection quantity using a lambda sensor may include performing a lambda deviation learning mode by controlling a lambda deviation, due to a difference between a lambda model value and a lambda sensor measurement value, by a controller during engine combustion in which an engine RPM and a fuel injection quantity are detected, wherein, in the lambda deviation learning mode, a learning map is learned and is then updated by setting a fuel correction quantity depending on the lambda deviation as a learning value, and a fuel injection quantity is determined, in consideration of the fuel correction quantity depending on an RPM and a fuel quantity based on the updated learning map, and is output as an output value, so that the output value is applied to feedback control for a next fuel injection quantity.

Abstract: A system for diagnosing and analyzing infrastructure, comprising: a storage unit storing a diagnostic script, which is for collecting system information from a target system or at least one target operating server of the target system; a script transmission unit transmitting the diagnostic script to the target system to diagnose the target system; a system information collection unit receiving the system information from the target system or the at least one target operating server as a result of the running of the diagnostic script; an analysis engine storage unit storing at least one analysis rule corresponding to the target system or the at least one target operating server; and an analysis information generation unit analyzing the system information by using the analysis rule, and generating analysis information regarding the target system and the at least one target operating server based on the results of the analyzing.

Abstract: A semiconductor device includes a stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Abstract: A semiconductor device includes a first semiconductor die, a first encapsulant surrounding the first semiconductor die, and a first redistribution structure formed on the first semiconductor die and the first encapsulant. The semiconductor device further includes a second semiconductor die, a second encapsulant surrounding the second semiconductor die, and a second redistribution structure formed on the second semiconductor die and the second encapsulant. The semiconductor device also include a conductive via electrically connecting the first redistribution structure to the second redistribution structure.

Abstract: A method of calculating depth information for a three-dimensional (3D) image includes generating a pattern based on the value of at least one cell included in a two-dimensional (2D) image, projecting the pattern, capturing a reflected image of the pattern, and calculating depth information based on the reflected image of the pattern.

Abstract: The present invention provides a substrate processing apparatus for controlling a plasma environment on a substrate.

Abstract: A semiconductor device includes a stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Abstract: A semiconductor device includes stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Abstract: A system for diagnosing and analyzing infrastructure, comprising: a storage unit storing a diagnostic script, which is for collecting system information from a target system or at least one target operating server of the target system; a script transmission unit transmitting the diagnostic script to the target system to diagnose the target system; a system information collection unit receiving the system information from the target system or the at least one target operating server as a result of the running of the diagnostic script; an analysis engine storage unit storing at least one analysis rule corresponding to the target system or the at least one target operating server; and an analysis information generation unit analyzing the system information by using the analysis rule, and generating analysis information regarding the target system and the at least one target operating server based on the results of the analyzing.

Abstract: The present disclosure relates to a semiconductor memory, device and a method of forming a semiconductor memory device. The method of manufacturing a semiconductor memory device, includes forming a tunnel insulation layer and a floating gate on a semiconductor substrate of an active region, forming a trench in the semiconductor substrate of an isolation region, forming, in the trench, a sacrificial layer having an upper surface positioned higher than a surface of the semiconductor substrate, forming a capping layer over the sacrificial layer, and forming an air gap by removing the sacrificial layer without removing the capping layer.

Abstract: A method of controlling a fuel injection quantity using a lambda sensor may include performing a lambda deviation learning mode by controlling a lambda deviation, due to a difference between a lambda model value and a lambda sensor measurement value, by a controller during engine combustion in which an engine RPM and a fuel injection quantity are detected, wherein, in the lambda deviation learning mode, a learning map is learned and is then updated by setting a fuel correction quantity depending on the lambda deviation as a learning value, and a fuel injection quantity is determined, in consideration of the fuel correction quantity depending on an RPM and a fuel quantity based on the updated learning map, and is output as an output value, so that the output value is applied to feedback control for a next fuel injection quantity.

Abstract: An aerial survey plane having a cover for protecting a lens of an infrared camera for an aerial survey according to an exemplary embodiment of the present invention includes: an aerial survey observation window; an aerial survey infrared camera; at least one shock absorbing part to absorb shock applied to the aerial survey infrared camera; at least one support vertically provided on the shock absorbing part; a lifting part to lift and lower the aerial survey infrared camera; a protective cover provided between the aerial survey infrared camera and the bottom surface of the fuselage of the aerial survey plane and having a size to cover the aerial survey observation window; at least one motor to move the protective cover toward any one direction; and a controller to remotely control the opening and the closing of the protective cover.

Abstract: A thermal treatment method for a display apparatus includes providing an acceptor substrate on a substrate stage, providing on the acceptor substrate a pattern mask including a transfer layer, irradiating a flash light beam onto the pattern mask from a plurality of flash lamps, and transferring the transfer layer to the acceptor substrate. The plurality of flash lamps are symmetrically provided with respect to the acceptor substrate and are configured to irradiate flash light beams.

Abstract: An apparatus and a method for controlling an electronic device are provided. The electronic device includes a housing, a holder positioned in a first surface of the housing to mount an external electronic device thereon, a beam projector positioned in a second surface of the housing, a mirror positioned between the first surface and the second surface to reflect a content outputted from the beam projector, an input unit provided in the housing, a transceiver communicable with the external electronic device, and a processor. The processor is configured to control for receiving the content from the external electronic device, outputting the content using the beam projector, and adjusting a direction in which the mirror is positioned according to a rotation control signal on the mirror received from the external electronic device through the transceiver or received through the input unit to adjust a direction in which the content is reflected.

Abstract: Provided is a method of controlling a compressor system including measuring variables for generating a performance curve of a compressor, calculating changing rates of the variables; comparing the calculated changing rates with preset changing rate variations; and determining a surge control line different from a preset surge control line according to the calculated changing rates if the calculated changing rates are out of ranges of the preset changing rate variations.