Abstract: Provided are a biodegradable aliphatic-aromatic polyester copolymer having excellent hydrolysis resistance and high viscosity which has a carboxyl end group (CEG) content of 15 mg KOH/g or less, a ratio (Mz/Mn) of a z-average molecular weight (Mz) to a number average molecular weight (Mn) of 3 to 15, and a melt index (MI) of 5 g/10 min or less as measured under conditions of a temperature of 190° C. and a load of 2.16 kg in accordance with ASTM D 1238. A method of preparing a biodegradable aliphatic-aromatic polyester copolymer is provided, including adding a chain extender and an anti-hydrolysis agent to an aliphatic-aromatic polyester pre-copolymer over time, whereby a significant viscosity rise and improvement of hydrolysis resistance may be implemented simultaneously.

Abstract: An embodiment electrolyte solution includes a lithium salt, a solvent, and a functional additive, wherein the functional additive includes 4-((tert-butoxydimethylsilyl)methyl)-5-methyl-1,3-dioxol-2-one represented by as an electrode film additive. An embodiment lithium secondary battery includes the above-described electrolyte solution, a positive electrode including a positive electrode active material including Ni, Co, and Mn, a negative electrode including a carbon-based negative electrode active material or a silicon-based negative electrode active material, and a separator interposed between the positive electrode and the negative electrode.

Abstract: An embodiment electrolyte solution includes a lithium salt, a solvent, and a functional additive, wherein the functional additive includes an electrode film additive of 2-(dodec-1-en-2-yl)-4,4,5,5-tetramethyl-1,3,2-dioxaborolane represented by An embodiment lithium secondary battery includes this electrolyte solution, a positive electrode including a positive-electrode active material including Ni, Co, and Mn, a negative electrode including a negative-electrode active material including a carbon (C)-based material or a silicon (Si)-based material, and a separator interposed between the positive electrode and the negative electrode.

Abstract: Provided are a biodegradable aliphatic-aromatic polyester copolymer having excellent hydrolysis resistance and high viscosity which has a carboxyl end group (CEG) content of 15 mg KOH/g or less, a ratio (Mz/Mn) of a z-average molecular weight (Mz) to a number average molecular weight (Mn) of 3 to 15, and a melt index (MI) of 5 g/10 min or less as measured under conditions of a temperature of 190° C. and a load of 2.16 kg in accordance with ASTM D 1238. A method of preparing a biodegradable aliphatic-aromatic polyester copolymer is provided, including adding a chain extender and an anti-hydrolysis agent to an aliphatic-aromatic polyester pre-copolymer over time, whereby a significant viscosity rise and improvement of hydrolysis resistance may be implemented simultaneously.

Abstract: The present invention relates to a peptide with anti-inflammatory activity, wherein the peptide comprises any one amino acid sequence of SEQ ID NO: 1 to SEQ ID NO: 161, the peptide has above 80% homology of amino acid sequence with above-mentioned sequences, or the peptide is the fragment of the above-mentioned peptides. The present invention also relates to an inflammatory composition comprising the above mentioned peptides. According to the present invention, a peptide that has at least one amino acid sequence of SEQ ID NO: 1 to SEQ ID NO: 161 has outstanding efficacy in both suppressing inflammation and in prophylactic means. Therefore, the composition comprising the peptides of this invention can be used as anti-inflammatory pharmaceutical compositions or as cosmetic compositions, in turn, treating and preventing a variety of different types of inflammatory diseases.

Abstract: Provided is a data input/output (I/O) method using a storage node-based key-value store in a storage disaggregation environment. The data I/O method using the storage node-based key-value store includes receiving a command converted from a key-value write request of an application from a calculation node according to a communication protocol used in the storage node, converting the command into an I/O request using a key included in the command, the I/O request including a logical block address and a value corresponding to the key, and storing the value in a storage device of the storage node using the logical block address of the I/O request.

Abstract: A method of a first user equipment (UE) may comprise: receiving a downlink (DL) reference signal transmitted by a base station using a beam included in a beam candidate group to be used for sidelink (SL) communication with a second UE; measuring a DL reference signal received power (RSRP) of the DL reference signal; determining a transmit power of a beam included in the beam candidate group based on the measured DL RSRP; and transmitting SL data to the second UE with the determined transmit power.

Abstract: An operation method of a relay node may include: receiving, from a first communication node, first data composed of n bits; receiving, from a second communication node, second data composed of m bits; in response to determining that n is greater than m, generating first T-data of m bits excluding (n-m) bits from the n-bits of the first data and first R-data of (n-m) bits; generating third data by performing a network coding operation on the first T-data and the second data; transmitting the third data to the first communication node; and transmitting the third data and the first R-data to the second communication node.

Abstract: Disclosed is a bulk block for manufacturing a prosthesis having high aesthetics and processability required for one-day dental prosthetic materials, which is a dental composite bulk block comprising a glass ceramic matrix and a polymer, wherein the glass ceramic matrix consists of an amorphous glass matrix and a crystalline phase dispersed in the glass matrix, the crystalline phase comprises as a main crystalline phase at least one selected from a leucite crystalline phase and a lithium disilicate crystalline phase, and has an average particle diameter of 0.01-1.0 ?m, and the polymer is included in an amount of 20-40 wt % with respect to the weight of the total bulk block. The bulk block has the advantages of improved mechanical properties, being capable of preventing microleakage, exhibiting excellent aesthetics, and enabling machining.

Abstract: An uplink transmission method performed by a terminal includes: receiving, from a base station, at least one DCI for allocating first uplink transmission and second uplink transmission; performing a first LBT procedure for the first uplink transmission, and performing the first uplink transmission when the first LBT procedure is successful; and performing a second LBT procedure for the second uplink transmission, and performing the second uplink transmission when the second LBT procedure is successful, wherein the first uplink transmission and the second uplink transmission are consecutively performed with a time interval longer than a predetermined time.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: A method by which a terminal operating in an unlicensed band transmits a signal includes the steps of: receiving, from a base station, configuration information about a carrier; receiving configuration information for configuring N (where N is an integer) guard band(s) for some frequency domains of the carrier; and transmitting a signal to the base station by using a first frequency domain of a bandwidth part belonging to the carrier, wherein the first frequency domain can be a domain excluding the N guard band(s) from the frequency domain of the bandwidth part.

Abstract: A method of a terminal may comprise: receiving, from a base station, configuration information of uplink reference signal (UL RS) for two or more serving cells; transmitting a first UL RS to the base station based on the configuration information in a first cell of the two or more serving cells; and transmitting a second UL RS to the base station based on the configuration information in a second cell of the two or more serving cells.

Abstract: A 3D printer according to an embodiment includes a liquid material supply unit provided with an ejection hole, for ejecting the liquid material upward, and a storage part, which is connected to the ejection hole and in which the ejected liquid material is stored, a liquid layer-forming unit that moves the liquid material, stored in the storage part, to a work holder, which is a region irradiated with a shaping beam, and forms a liquid layer for 3-dimensional shaping, and a 3-dimensional shaping unit which performs 3-dimensional shaping by irradiating, with the shaping beam, the liquid layer formed on the work holder.

Abstract: Disclosed are various methods for transmitting or receiving data or control information having high reliability conditions. A method for operating a terminal which transmits uplink control information (UCI) includes: a step of generating UCI; a step of comparing the priority of an uplink (UL) control channel for the transmission of the UCI with the priority of a UL data channel when some symbols of the UL control channel and the UL data channel overlap; and a step of selecting the UL channel having a higher priority among the UL control channel and the UL data channel, and transmitting the UCI to a base station through the selected UL channel.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: There is provided a method of preparing a photoelectrochemical and electrochemical electrode catalyst, the method including preparing a metal oxide-based electrode, introducing a phosphate layer on a surface of the metal oxide-based electrode; and converting the phosphate layer into an oxyhydroxide layer by performing electrochemical activation on the phosphate layer. The efficiency of selective oxidation reaction of ammonia in wastewater may be improved.