Patents by Inventor Sungwng Kim
Sungwng Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180212130Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.Type: ApplicationFiled: March 23, 2018Publication date: July 26, 2018Applicants: Research & Business Foundation SUNGKYUNKWAN UNIVERSITY, Samsung Electronics Co., Ltd.Inventors: Seongjun PARK, Hyeonjin Shin, Sungwng Kim, Eunsung Kim, Jaeyeol Hwang Hwang
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Patent number: 9954155Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.Type: GrantFiled: September 29, 2016Date of Patent: April 24, 2018Assignees: SAMSUNG ELECTRONICS CO., LTD, RESEARCH AND BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYInventors: Seongjun Park, Hyeonjin Shin, Sungwng Kim, Eunsung Kim, Jaeyeol Hwang
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Publication number: 20170098749Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.Type: ApplicationFiled: September 29, 2016Publication date: April 6, 2017Applicants: Samsung Electronics Co., Ltd., Research & Business Foundation Sungkyunkwan UniversityInventors: Seongjun PARK, Hyeonjin SHIN, Sungwng KIM, Eunsung KIM, Jaeyeol HWANG
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Patent number: 8288321Abstract: Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.Type: GrantFiled: July 9, 2009Date of Patent: October 16, 2012Assignee: Japan Science and Technology AgencyInventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Takatoshi Nomura, Yoichi Kamihara
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Publication number: 20110111965Abstract: Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.Type: ApplicationFiled: July 9, 2009Publication date: May 12, 2011Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Takatoshi Nomura, Yoichi Kamihara
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Publication number: 20110045985Abstract: A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM)2Pn2 [wherein A is at least one member selected from the elements in Group 1, the elements in Group 2, or the elements in Group 3 (Sc, Y, and the rare-earth metal elements); TM is at least one member selected from the transition metal elements Fe, Ru, Os, Ni, Pd, or Pt; and Pn is at least one member selected from the elements in Group 15 (pnicogen elements)] and which has an infinite-layer crystal structure comprising (TM)Pn layers alternating with metal layers of the element (A).Type: ApplicationFiled: February 20, 2009Publication date: February 24, 2011Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Yoichi Kamihara, Takatoshi Nomura
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Patent number: 7892458Abstract: In an electride C12A7 provided by replacing free oxygen in 12CaO.7Al2O3 with electrons, a material having metallic electroconductivity and an electric conductivity of more than 5×102 S/cm at room temperature could not have been produced without difficulties. An electride 12CaO.7Al2O3, which has metallic electroconductivity and has an electric conductivity of more than 5×102 S/cm at room temperature, can be produced by heat-treating titanium metal vapor and 12CaO.7Al2O3 single crystal, sinter, or thin film at a temperature above 600° C. and below 1,450° C. for less than 240 hours. Further, thermoelectric field electron release can also be realized using an electron release chip fabricated from the electride.Type: GrantFiled: November 17, 2006Date of Patent: February 22, 2011Assignee: Japan Science and Technology AgencyInventors: Hideo Hosono, Sungwng Kim, Katsurou Hayashi, Masashi Miyakawa, Satoru Matsuishi, Toshio Kamiya, Masahiro Hirano, Yoshitake Toda
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Publication number: 20090224214Abstract: In an electride C12A7 provided by replacing free oxygen in 12CaO.7Al2O3 with electrons, a material having metallic electroconductivity and an electric conductivity of more than 5×102 S/cm at room temperature could not have been produced without difficulties. An electride 12CaO.7Al2O3, which has metallic electroconductivity and has an electric conductivity of more than 5×102 S/cm at room temperature, can be produced by heat-treating titanium metal vapor and 12CaO.7Al2O3 single crystal, sinter, or thin film at a temperature above 600° C. and below 1,450° C. for less than 240 hours. Further, thermoelectric field electron release can also be realized using an electron release chip fabricated from the electride.Type: ApplicationFiled: November 17, 2006Publication date: September 10, 2009Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideo Hosono, Sungwng Kim, Katsurou Hayashi, Masashi Miyakawa, Satoru Matsuishi, Toshio Kamiya, Masahiro Hirano, Yoshitake Toda
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Patent number: 7465433Abstract: To provide a method for preparing a mayenite type compound having electroconductivity imparted. A method for preparing an electroconductive mayenite type compound, which comprises melting a raw material containing Al and at least one element selected from the group consisting of Ca and Sr, holding the melt in a low oxygen partial pressure atmosphere having an oxygen partial pressure of not higher than 10 Pa, followed by cooling or annealing in a low oxygen partial pressure atmosphere or in atmospheric air for solidification, thereby to replace oxygen present in cages by electrons in a high concentration.Type: GrantFiled: August 14, 2006Date of Patent: December 16, 2008Assignees: Asahi Glass Company, Limited, Japan Science and Technology AgencyInventors: Hideo Hosono, Katsuro Hayashi, Masashi Miyakawa, Masahiro Hirano, Sungwng Kim, Setsuro Ito, Satoru Narushima
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Publication number: 20060276326Abstract: To provide a method for preparing a mayenite type compound having electroconductivity imparted. A method for preparing an electroconductive mayenite type compound, which comprises melting a raw material containing Al and at least one element selected from the group consisting of Ca and Sr, holding the melt in a low oxygen partial pressure atmosphere having an oxygen partial pressure of not higher than 10 Pa, followed by cooling or annealing in a low oxygen partial pressure atmosphere or in atmospheric air for solidification, thereby to replace oxygen present in cages by electrons in a high concentration.Type: ApplicationFiled: August 14, 2006Publication date: December 7, 2006Applicants: ASAHI GLASS COMPANY, LIMITED, JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideo Hosono, Katsuro Hayashi, Masashi Miyakawa, Masahiro Hirano, Sungwng Kim, Setsuro Ito, Satoru Narushima