Abstract: An apparatus for fabricating a display panel and a fabricating method of a display panel are provided. An apparatus for fabricating a display panel includes a loading module of a large-area fabricating substrate fabricated and separated into a plurality of display panels, a solvent application module configured to apply a metal bonding solvent onto the large-area fabricating substrate, and an element transfer module configured to transfer a plurality of light emitting elements or at least one integrated circuit onto the large-area fabricating substrate on which the metal bonding solvent is applied, and the loading module includes a groove type discharge path through which the metal bonding solvent applied by the solvent application module flows and is discharged.

Abstract: Electronic device includes first wireless communication interface; second wireless communication interface; and controller.

Abstract: Proposed is a system based on the Internet of Media Things (IoMT). The system may include at least one first sensor configured to perform a predetermined function in a target space or region, and a second sensor based on at least one of video or audio. The system may also include a first analysis processor configured to generate first analysis data of a set mission within the target space or region based on first data sensed by the first sensor. The system may further include a second analysis processor configured to generate second analysis data for a set mission within the target space or region based on second data sensed by the second sensor. The system may further include storage configured to store the sensed first data and second data and the first and second analysis data based on the identifier.

Abstract: There is provided a camera module including a plurality of ball bearings to support the driving of a lens barrel at the time of compensating for unintended camera movement due to disturbance such as hand shake. The lens barrel may be driven in first and second directions, independently, by one driving force exerted in the first direction perpendicular to an optical axis and by another driving force exerted in the second direction perpendicular to both the optical axis and the first direction, thereby preventing driving displacement from being generated at the time of compensating for unwanted motion such as hand shake while securing reliability against external impact, and having reduced power consumption at the time of compensating for the disturbance.

Abstract: The present invention relates to an image encoding and decoding technique, and more particularly, to an image encoder and decoder using unidirectional prediction. The image encoder includes a dividing unit to divide a macro block into a plurality of sub-blocks, a unidirectional application determining unit to determine whether an identical prediction mode is applied to each of the plurality of sub-blocks, and a prediction mode determining unit to determine a prediction mode with respect to each of the plurality of sub-blocks based on a determined result of the unidirectional application determining unit.

Abstract: A protective film is provided. The protective film includes a release film, a base film which is disposed on the release film and comprises a protective part and a first pull tab part protruding from a first side surface of the protective part, and a first dummy film which is disposed on the release film, does not overlap the base film in a plan view, and comprises a part partially surrounding the first pull tab part, where edges of the base film and edges of the first dummy film are disposed inside edges of the release film in the plan view.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A display device includes a display panel including a rear surface and a front surface, where the front surface is provided with a display surface and including a folding axis extending in a first direction, a first barrier member disposed on the rear surface of the display panel and having a modulus of about 1 GPa to about 300 GPa, a first coupling member disposed on a rear surface of the first barrier member, and a metal plate disposed on a rear surface of the first coupling member and including a first plate portion and a second plate portion which are arranged in a second direction crossing the first direction and a connection portion connecting the first plate portion and the second plate portion, where the first coupling member does not overlap the connection portion in a plan view.

Abstract: Provided are a method for fabricating a human nasal turbinate-derived mesenchymal stem cell-based 3D bioprinted construct, and a use thereof, wherein the human nasal turbinate-derived mesenchymal stem cell-based, 3D bioprinted construct is advantageous over conventional mesenchymal stem cell-based, 3D bioprinted constructs in that the former can survive and proliferate stably in vitro and/or in vivo and shows high osteogenic differentiation ability as well, therefore is expected to make a great contribution to the practical use of cellular therapeutic agents.

Abstract: A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: The liquefied gas storage tank includes a primary barrier, a primary insulation wall, a secondary barrier, and a secondary insulation wall. In a state where unit elements are arranged adjacent to each other, each of the unit elements being formed by stacking the secondary insulation wall, the secondary barrier, and a fixed insulation wall which is a part of the primary insulation wall, the primary insulation wall may comprise: a connection insulation wall provided in the space between the adjacent fixed insulation walls; first slits formed between the fixed insulation walls and the connection insulation wall when the connection insulation wall is inserted and installed between the adjacent fixed insulation walls; a plurality of second slits formed in a lengthwise direction and a widthwise direction of the fixed insulation walls; and a first insulating filler material for filling the first slits.

Abstract: A semiconductor package including a die paddle, a first lead spaced apart from the die paddle and on one side of the die paddle, a second lead spaced apart from the die paddle and on another side of the die paddle, a spacer on the die paddle, a semiconductor die on the spacer, a first wire configured to connect an upper surface of the semiconductor die to the first lead, and a mold film configured to cover the die paddle, the first lead, the second lead, the spacer, the semiconductor die, and the first wire, wherein a first width of the spacer is greater than a second width of the die paddle so that the spacer overlaps the first lead may be provided.

Abstract: Provided is an aerogel blanket and a method for producing the same, wherein a catalyzed sol I sufficiently and uniformly impregnated into a blanket in an impregnation tank, and the catalyzed sol is allowed to stay in the impregnation tank for a specific time to control fluidity while achieving a viscosity at which the catalyzed sol can be easily introduced into the blanket, thereby forming a uniform aerogel in the blanket. As a result, the uniformity of pore structure and thermal insulation performance of an aerogel blanket are improved, the loss of raw materials is reduced through the impregnation process, the occurrence of process problems is reduced, and the generation of dust is reduced.

Abstract: An image encoding/decoding method is provided. An image decoding method of the present invention may comprise deriving an intra-prediction mode of a current luma block, deriving an intra-prediction mode of a current chroma block based on the intra-prediction mode of the current luma block, generating a prediction block of the current chroma block based on the intra-prediction mode of the current chroma block, and the deriving of an intra-prediction mode of a current chroma block may comprise determining whether or not CCLM (Cross-Component Linear Mode) can be performed for the current chroma block.

Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: A display device includes a substrate including a display area and a non-display area, and pixels disposed in the display area. The pixels each include first electrodes, second electrodes spaced apart from the first electrodes, and light emitting elements disposed between the first electrodes and the second electrodes. The first electrodes each include a closed loop of a polygonal shape in some sections.

Abstract: A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.

Abstract: A three-dimensional semiconductor device may comprise a first cell region, a second cell region, and a via plug region disposed between the first cell region and the second cell region; a word line stack disposed in the first cell region, the via plug region, and the second cell region, the word line stack including a plurality of word lines and a plurality of interlayer insulating layers which are alternately stacked; and a plurality of via plugs exclusively connected to the plurality of the word lines, respectively, by vertically penetrating through the word line stack in the via plug region. The via plugs may have an arrangement of a zigzag pattern in a row direction from a top view. The diameters of the via plugs may increase in the row direction.

Abstract: An electrolyte solution additive for a secondary battery, a non-aqueous electrolyte solution including the same, and a lithium secondary battery including the same are disclosed herein. To be specific, the above non-aqueous electrolyte solution includes the electrolyte solution additive comprising the compound represented by Formula 1: wherein, in Formula 1, R1 and R2 are each independently an unsubstituted or substituted alkylene group having 1 to 5 carbon atoms, and L is a direct bond, —O—, —COO—, —RO—, or —R?COO—, wherein R and R? are each independently an alkylene group having 1 to 10 carbon atoms. The additive has an excellent effect of scavenging a decomposition product generated from a lithium salt.