Abstract: A semiconductor chip package structure for achieving face-down electrical connection without using a wire-bonding process includes a package unit, a semiconductor chip, a substrate unit, a first insulative unit, a first conductive unit, a second conductive unit, and a second insulative unit. The semiconductor chip has a plurality of conductive pads. The first insulative unit has a first insulative layer formed between the conductive pads. The first conductive unit has a plurality of first conductive layers, and one side of each first conductive layer is electrically connected with the corresponding conductive pad. The second conductive unit has a plurality of second conductive layers respectively formed on the first conductive layers. The second insulative unit is formed between the first conductive layers and between the second conductive layers.

Abstract: A semiconductor chip package structure without substrates for achieving face-up electrical connection without using a wire-bonding process includes a package unit, a semiconductor chip, a first insulative unit, a first conductive unit, a second conductive unit, and a second insulative unit. The package unit has a central receiving groove for receiving the semiconductor chip. The semiconductor chip has a plurality of conductive pads. The first insulative unit has a first insulative layer formed between the conductive pads. The first conductive unit has a plurality of first conductive layers. The second conductive unit has a plurality of second conductive layers formed on the first conductive layers. The second insulative unit is formed between the first conductive layers and between the second conductive layers.

Abstract: A semiconductor chip package structure for achieving face-up electrical connection without using a wire-bonding process includes a package unit, a semiconductor chip, a substrate unit, a first insulative unit, a first conductive unit, a second conductive unit, and a second insulative unit. The package unit has a central receiving groove and an outer receiving groove formed around the central receiving groove. The semiconductor chip has a plurality of conductive pads. The first insulative unit has a first insulative layer formed between the conductive pads. The first conductive unit has a plurality of first conductive layers. The second conductive unit has a plurality of second conductive layers formed on the first conductive layers. The second insulative unit is formed between the first conductive layers and between the second conductive layers.