Abstract: A method for producing a high-nickel positive electrode active material, a positive electrode active material produced thereby, and a positive electrode and a lithium secondary battery including the same is provided. The method includes preparing a lithium composite transition metal oxide having a nickel content of 80 atm % or greater among transition metals, washing the lithium composite transition metal oxide, and mixing the washed lithium composite transition metal oxide with an aluminum raw material and heat treating the mixture at a temperature of 650° C. to 690° C. to obtain a positive electrode active material having a surface portion doped with aluminum.

Abstract: A semiconductor memory device includes a first semiconductor chip and a second semiconductor chip. Each semiconductor chip of the first and second semiconductor chips may include a cell array region and a peripheral circuit region. The cell array region may include an electrode structure including electrodes sequentially stacked on a body conductive layer and vertical structures extending through the electrode structure and connected to the body conductive layer. The peripheral circuit region may include a residual substrate on the body conductive layer and on which a peripheral transistor is located. A bottom surface of the body conductive layer of the second semiconductor chip may face a bottom surface of the body conductive layer of the first semiconductor chip.

Abstract: A method of a terminal, according to an exemplary embodiment of the present disclosure, may include: requesting access to a mobile integrated access backhaul (IAB) based on cell search; receiving a tracking area (TA) update procedure stop request message from an Access and Mobility Management Function (AMF) of a core network; and deactivating a TA update procedure based on the TA update procedure stop request message.

Abstract: A method of an IAB node may comprise: receiving an RRC message including measurement control information from a base station; transmitting RRC reconfiguration information including the measurement control information to each of a plurality of terminals; receiving a measurement report message including a measurement report generated by each of the plurality of terminals based on the measurement control information from each of the plurality of terminals; and grouping the measurement report messages received from the plurality of terminals into a grouped message report message, and transmitting the grouped measurement report message to the base station according to a grouped measurement reporting periodicity.

Abstract: A method of an integrated access and backhaul (IAB) node may include: receiving, from a target base station, one or more user equipment (UE) context setup request messages including terminal radio resource reconfiguration information; sharing context information including the terminal radio resource reconfiguration information with a source IAB-distributed unit 1 (IAB-DU1); configuring terminal reconfiguration information using the shared context information; and transmitting one or more UE context setup response messages including the terminal reconfiguration information to the target base station in response to the one or more UE context setup request messages.

Abstract: A method of an aerial vehicle for urban air mobility may include: reporting, to a first base station, a measurement result for neighboring base stations including a second base station; receiving, from the first base station and as a processing result based on the measurement result, an indication of a failure of a handover to the second base station; requesting, to a control station, first location information indicating a first location to move according to the failure of the handover; receiving the first location information from the control station; and moving according to the received first location information.

Abstract: An antenna apparatus includes: a parabolic reflector; a dielectric support pedestal; a sub-reflector connected to an upper part of the dielectric support pedestal; and a waveguide connected to a lower part of the dielectric support pedestal, wherein the parabolic reflector has a curved surface in which a ratio of a focal length to a diameter is greater than a preset value, and at least one corrugation configured to suppress a cross polarization is formed in a region of the dielectric support pedestal.

Abstract: Disclosed is an anti-adhesion agent composition which uses a high molecular weight compound having biocompatibility and an oil derived from animals, plants, and minerals so as to improve low viscosity and low strength, which are problems of existing anti-adhesion agents, and prevent adhesion between living tissues. The anti-adhesion composition according to the present disclosure performs a physical barrier function through simple mixing of a polymer material, serving as a physical barrier in its anti-adhesion effect, and a solvent, and remains in the body for a certain period of time, then decomposes, absorbs, and is excreted. The anti-adhesion composition does not interfere with the healing of the wound after surgery, and exhibits an excellent effect of convenient application to the surgical site.

Abstract: The present invention provides an optical filter for its use. In the present invention, it is possible to provide an optical filter that effectively blocks ultraviolet ray and infrared ray and exhibits high transmittance in visible light. Furthermore, it is possible to provide an optical filter where the transmission characteristics are stably maintained even when an incident angle is changed. Moreover, it is possible to provide an optical filter that does not exhibit problems such as ripple, petal flare, and curl.

Abstract: The present invention provides an optical filter for its use. In the present invention, it is possible to provide an optical filter that effectively blocks ultraviolet ray and infrared ray and exhibits high transmittance in visible light. Furthermore, it is possible to provide an optical filter where the transmission characteristics are stably maintained even when an incident angle is changed. Moreover, it is possible to provide an optical filter that does not exhibit problems such as ripple or petal flare.

Abstract: The provided is an optical filter for its use. In the present invention, it is possible to provide an optical filter that effectively blocks ultraviolet ray and infrared ray and exhibits high transmittance in visible light. Furthermore, it is possible to provide an optical filter where the transmission characteristics are stably maintained even when an incident angle is changed. Moreover, it is possible to provide an optical filter that does not exhibit problems such as ripple and petal flare, and thus to provide the optical filter with excellent durability.

Abstract: An apparatus for predicting performance of a wheel in a vehicle: includes a learning device that generates a latent space for a plurality of two-dimensional (2D) wheel images based on a convolutional autoencoder (CAE), extracts a predetermined number of the plurality of 2D wheel images from the latent space, and learns a dataset having the plurality of 2D wheel images and performance values corresponding to the plurality of 2D wheel images; and a controller that predicts performance for the plurality of 2D wheel images based on a performance prediction model obtained by the learning device.

Abstract: A transportation head for a microchip transfer device capable of minimizing mechanical and chemical damage to a microchip, a microchip transfer device having same, and a transfer method thereby, and the transportation head includes a head body having a pickup area and a dummy area; a first protruding pin disposed in the pickup area of the head body; and a liquid droplet attached to the first protruding pin.

Abstract: A semiconductor device includes a gate stack structure including insulating patterns and conductive patterns which are alternately stacked, a first separation structure penetrating the gate stack structure, a second separation structure penetrating the gate stack structure and being adjacent to the first separation structure, first and second memory channel structures penetrating the gate stack structure and disposed between the first separation structure and the second separation structure, a first bit line overlapping with the first and second memory channel structures and electrically connected to the first memory channel structure, and a second bit line overlapping with the first and second memory channel structures and the first bit line and electrically connected to the second memory channel structure.

Abstract: A semiconductor memory device includes a gate stack structure including insulating layers, a lower selection line and word lines, the word lines including a first word line adjacent to the lower selection line and a second word line on the first word line, a memory channel structure penetrating the gate stack structure, a plurality of first contact plugs electrically connected to the first word line, a plurality of second contact plugs electrically connected to the second word line, a first conductive line connected to the plurality of first contact plugs, and a second conductive line connected to one of the plurality of second contact plugs.

Abstract: A three-dimensional semiconductor memory device may include horizontal patterns disposed on a peripheral circuit structure and spaced apart from each other, memory structures provided on the horizontal patterns, respectively, each of the memory structures including a three-dimensional arrangement of memory cells. Penetrating insulating patterns and separation structures may isolate the horizontal patterns from one another. Through vias may extend through the penetrating insulating patterns to connect logic circuits of the peripheral circuit structure to the memory structure.

Abstract: Provided is a pixel driving circuit including a first circuit configured to control, in a data writing mode, a signal related to driving of one or more light-emitting elements, and a second circuit configured to supply, in a driving mode, power to the one or more light-emitting elements based on a signal transmitted from the first circuit.

Abstract: The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.

Abstract: A semiconductor memory device comprising: a first semiconductor chip including an upper input/output pad, a second semiconductor chip including a lower input/output pad, and a substrate attachment film attaching the first and second semiconductor chips. The first and second semiconductor chips each include a first substrate including a first side facing the substrate attachment film and a second side, a mold structure including gate electrodes, a channel structure penetrating the mold structure and intersecting the gate electrodes, a second substrate including a third side facing the first side and a fourth side, a first circuit element on the third side of the second substrate, and a contact via penetrating the first substrate and connected to the first circuit element. The upper and lower input/output pads are on the second sides of the first and second semiconductor chip, respectively, and contact the contact vias of the first and second semiconductor chips.

Abstract: A nonvolatile memory device includes a substrate including a cell region and a peripheral circuit region, a stacked structure on the cell region, the stacked structure including a plurality of gate patterns separated from each other and stacked sequentially, a semiconductor pattern connected to the substrate through the stacked structure, a peripheral circuit element on the peripheral circuit region, a first interlayer insulating film on the cell region and the peripheral circuit region, the first interlayer insulating film covering the peripheral circuit element, and a lower contact connected to the peripheral circuit element through the first interlayer insulating film, a height of a top surface of the lower contact being lower than or equal to a height of a bottom surface of a lowermost gate pattern of the plurality of gate patterns on the first interlayer insulating film.