Abstract: An overlaid erase block (EB) mapping scheme for a flash memory provides efficient wear-leveling and reduces mount operation latency. The overlaid EB mapping scheme maps a first type of EB onto one of a plurality of physical erase blocks, in a corresponding portion of the flash memory. The first type of EB includes a plurality of pointers. The overlaid EB mapping scheme also maps each of second and third types of EBs onto one of the physical EBs that is not mapped to the first type of EB. The second type of EBs store system management information and the third type of EBs store user data. When the flash memory is started up, the overlaid EB mapping scheme scans the corresponding portion to locate the first type of EB, locates the system EBs using the pointers, and locates the data EBs using the system management information.

Abstract: An overlaid erase block (EB) mapping scheme for a flash memory provides efficient wear-leveling and reduces mount operation latency. The overlaid EB mapping scheme maps a first type of EB onto one of a plurality of physical erase blocks, in a corresponding portion of the flash memory. The first type of EB includes a plurality of pointers. The overlaid EB mapping scheme also maps each of second and third types of EBs onto one of the physical EBs that is not mapped to the first type of EB. The second type of EBs store system management information and the third type of EBs store user data. When the flash memory is started up, the overlaid EB mapping scheme scans the corresponding portion to locate the first type of EB, locates the system EBs using the pointers, and locates the data EBs using the system management information.

Abstract: An overlaid erase block (EB) mapping scheme for a flash memory provides efficient wear-leveling and reduces mount operation latency. The overlaid EB mapping scheme maps a first type of EB onto one of a plurality of physical erase blocks, in a corresponding portion of the flash memory. The first type of EB includes a plurality of pointers. The overlaid EB mapping scheme also maps each of second and third types of EBs onto one of the physical EBs that is not mapped to the first type of EB. The second type of EBs store system management information and the third type of EBs store user data. When the flash memory is started up, the overlaid EB mapping scheme scans the corresponding portion to locate the first type of EB, locates the system EBs using the pointers, and locates the data EBs using the system management information.

Abstract: A system and method for programming a memory device with debug data upon a system failure is disclosed herein. For example, the system can include a timer device, a buffer, a register, and a memory device. The buffer can be configured to receive debug data. The register can be configured to receive memory address information. Also, the memory device can be configured to store the debug data from the buffer at a memory address corresponding to the memory address information when a timer value of the timer device reaches zero. Further, the system can include a processing unit configured to provide the timer value to the timer device and the memory address information to the register.

Abstract: An overlaid erase block (EB) mapping scheme for a flash memory provides efficient wear-leveling and reduces mount operation latency. The overlaid EB mapping scheme maps a first type of EB onto one of a plurality of physical erase blocks, in a corresponding portion of the flash memory. The first type of EB includes a plurality of pointers. The overlaid EB mapping scheme also maps each of second and third types of EBs onto one of the physical EBs that is not mapped to the first type of EB. The second type of EBs store system management information and the third type of EBs store user data. When the flash memory is started up, the overlaid EB mapping scheme scans the corresponding portion to locate the first type of EB, locates the system EBs using the pointers, and locates the data EBs using the system management information.

Abstract: A system and method for programming a memory device with debug data upon a system failure is disclosed herein. For example, the system can include a timer device, a buffer, a register, and a memory device. The buffer can be configured to receive debug data. The register can be configured to receive memory address information. Also, the memory device can be configured to store the debug data from the buffer at a memory address corresponding to the memory address information when a timer value of the timer device reaches zero. Further, the system can include a processing unit configured to provide the timer value to the timer device and the memory address information to the register.

Abstract: A system and methodology that can prevent errors during data commit on multicycle pass complete associated with a memory is provided. The system employs a transaction buffer component in the memory that receives and temporarily stores information associated with a transaction. A controller component programs subsets of data to respective memory locations once the entire transaction is completed based on the information stored in the transaction buffer component. Thus, if the transaction is interrupted during the transfer of the user data into the buffer, the data stored in the memory is not affected and can still contain the original data when power is regained. If the data transfer between the transaction buffer component and memory array is interrupted, the controller component can complete the transfer from the point of interruption on regaining power and can avoid partial storage of data.

Abstract: Systems and/or methods that facilitate logical block address (LBA) to physical block address (PBA) translations associated with a memory component(s) are presented. The disclosed subject matter employs an optimized block address (BA) component that can facilitate caching the LBA to PBA translations within a memory controller component based in part on a predetermined optimization criteria to facilitate improving the access of data associated with the memory component. The predetermined optimization criteria can relate to a length of time since an LBA has been accessed, a number of times the LBA has been access, a data size of data related to an LBA, and/or other factors. The LBA to PBA translations can be utilized to facilitate accessing the LBA and/or associated data using the cached translation, instead of performing various functions to determine the translation.

Abstract: Systems and/or methods that facilitate transferring data between a processor component and memory components are presented. A transfer controller component facilitates controlling data transfers in part by receiving respective subsets of data from respective memory components and arranging the respective subsets of data based in part on a desired predefined data order. The processor component generates a transfer map that includes information to facilitate arranging data in a predefined order. The processor component generates respective subsets of commands that are provided to queue components in respective memory components to retrieve desired data from the respective memory components. Each memory component services the commands in its queue component in an independent and parallel manner, and transfers the data retrieved from memory to the transfer controller component, which can arrange the received data in a predefined order for transfer to the processor component.

Abstract: Systems and/or methods that facilitate accessing data to/from a memory are presented. An electronic memory component can operate with reduced data access times by eliminating/reducing the use of logical block addressing and employing physical block addressing. Data access is thereby directly associated with the physical location of the stored bits and the need to translate between a logical address and the physical address is reduced or eliminated. This can be even more efficient under asymmetric data access patterns. Further, legacy support for logical block addressing can be included to provide backward compatibility, mixed mode operation, or complimentary mode operation.

Abstract: Systems and/or methods that facilitate PBA and LBA translations associated with a memory component(s) are presented. A memory controller component facilitates determining which memory component, erase block, page, and data block contains a PBA in which a desired LBA and/or associated data is stored. The memory controller component facilitates control of performance of calculation functions, table look-up functions, and/or search functions to locate the desired LBA. The memory controller component generates a configuration sequence based in part on predefined optimization criteria to facilitate optimized performance of translations. The memory controller component and/or associated memory component(s) can be configured so that the translation attributes are determined in a desired order using the desired translation function(s) to determine a respective translation attribute based in part on the predefined optimization criteria. The LBA to PBA translations can be performed in parallel by memory components.

Abstract: Systems and methods that facilitate bad block management in a memory device that comprises nonvolatile memory are presented. One or more memory blocks of a memory device are each associated with one or more additional, dedicated bits that facilitate indicating whether the associated memory block is defective. These additional bits, called bad block bits, can be stored in a hardware-based storage mechanism within the memory device. Once a defect is detected in a memory block, at least one of the associated bad block bits can be set to indicate that the memory block is defective. If at least one of the bad block bits associated with a memory block indicates a memory block is defective, access to the memory block can be prevented.

Abstract: Systems and/or methods that facilitate logical block address (LBA) to physical block address (PBA) translations associated with a memory component(s) are presented. The disclosed subject matter employs an optimized block address (BA) component that can facilitate caching the LBA to PBA translations within a memory controller component based in part on a predetermined optimization criteria to facilitate improving the access of data associated with the memory component. The predetermined optimization criteria can relate to a length of time since an LBA has been accessed, a number of times the LBA has been access, a data size of data related to an LBA, and/or other factors. The LBA to PBA translations can be utilized to facilitate accessing the LBA and/or associated data using the cached translation, instead of performing various functions to determine the translation.

Abstract: Systems and/or methods that facilitate PBA and LBA translations associated with a memory component(s) are presented. A memory controller component facilitates determining which memory component, erase block, page, and data block contains a PBA in which a desired LBA and/or associated data is stored. The memory controller component facilitates control of performance of calculation functions, table look-up functions, and/or search functions to locate the desired LBA. The memory controller component generates a configuration sequence based in part on predefined optimization criteria to facilitate optimized performance of translations. The memory controller component and/or associated memory component(s) can be configured so that the translation attributes are determined in a desired order using the desired translation function(s) to determine a respective translation attribute based in part on the predefined optimization criteria. The LBA to PBA translations can be performed in parallel by memory components.

Abstract: Systems and/or methods that facilitate accessing data to/from a memory are presented. An electronic memory component can operate with reduced data access times by eliminating/reducing the use of logical block addressing and employing physical block addressing. Data access is thereby directly associated with the physical location of the stored bits and the need to translate between a logical address and the physical address is reduced or eliminated. This can be even more efficient under asymmetric data access patterns. Further, legacy support for logical block addressing can be included to provide backward compatibility, mixed mode operation, or complimentary mode operation.

Abstract: A system and methodology that can prevent errors during data commit on multicycle pass complete associated with a memory is provided. The system employs a transaction buffer component in the memory that receives and temporarily stores information associated with a transaction. A controller component programs subsets of data to respective memory locations once the entire transaction is completed based on the information stored in the transaction buffer component. Thus, if the transaction is interrupted during the transfer of the user data into the buffer, the data stored in the memory is not affected and can still contain the original data when power is regained. If the data transfer between the transaction buffer component and memory array is interrupted, the controller component can complete the transfer from the point of interruption on regaining power and can avoid partial storage of data.

Abstract: Systems and/or methods that facilitate transferring data between a processor component and memory components are presented. A transfer controller component facilitates controlling data transfers in part by receiving respective subsets of data from respective memory components and arranging the respective subsets of data based in part on a desired predefined data order. The processor component generates a transfer map that includes information to facilitate arranging data in a predefined order. The processor component generates respective subsets of commands that are provided to queue components in respective memory components to retrieve desired data from the respective memory components. Each memory component services the commands in its queue component in an independent and parallel manner, and transfers the data retrieved from memory to the transfer controller component, which can arrange the received data in a predefined order for transfer to the processor component.

Abstract: Systems and methods that facilitate bad block management in a memory device that comprises nonvolatile memory are presented. One or more memory blocks of a memory device are each associated with one or more additional, dedicated bits that facilitate indicating whether the associated memory block is defective. These additional bits, called bad block bits, can be stored in a hardware-based storage mechanism within the memory device. Once a defect is detected in a memory block, at least one of the associated bad block bits can be set to indicate that the memory block is defective. If at least one of the bad block bits associated with a memory block indicates a memory block is defective, access to the memory block can be prevented.

Abstract: A method, device and system for determining whether a prior shut down of a device having a solid state non-volatile memory unit such as a flash memory unit resulted from a power loss and disorderly shut down and whether a power loss recovery procedure should be run.

Abstract: A bit alterable memory device may include status bits such as a direction bit and two register bits for a colony of memory cells. The state of each status bit may be changed depending on the programming state of the non-volatile bit alterable memory. The status bits may be examined to determine the write status of two separate colonies of memory cells in the event of a power loss. The information gathered from the status bits can be used by a power loss recovery mechanism to determine whether the data written to a plurality of memory cell colonies is partially written. Applying a power loss recovery mechanism to a bit alterable memory can prevent the user from relying on data that is corrupt or otherwise unusable.