Abstract: An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density. This annealing step is selected from a group of four re-oxidizing techniques: Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% O2); annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C.

Abstract: An embodiment of the present invention is a method of forming an ultra-thin dielectric layer by providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density. This annealing step is selected from a group of four re-oxidizing techniques: Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% 02); annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C.) in nitrogen-comprising atmosphere (preferably N2/O2 or N2O/H2); annealing by rapid thermal heating in ammonia of reduced pressure (preferably at 600 to 1000° C.

Abstract: In a workpiece for producing an apparatus having a flash memory array integrally formed with another device on a common substrate, a method for preparing the workpiece for high temperature oxidation processing permits a controllable short distance between adjacent components in the flash memory array. The workpiece includes a substrate sector configured for presenting a plurality of source elements and a plurality of drain elements for the flash memory array. The workpiece further includes a plurality of polysilicon lands arranged with the plurality of source elements and the plurality of drain elements for employment as floating gate structures in the flash memory array. The method includes the steps of: (a) growing an oxide material upon the workpiece substantially covering the workpiece; and (b) treating the oxide material with a nitrous oxide material. The treating is effected under conditions appropriate to establish a nitrogen-rich layer upon the oxide material.

Abstract: A method of forming an ultra-thin dielectric layer, including the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density.

Abstract: A method for manufacturing a semiconductor device includes forming a first layer adjacent a semiconductor substrate. The first layer may comprise oxygen. The first layer may be subjected to a material comprising nitrogen to form a second layer. The second layer may be oxidized to form a dielectric layer which may have a relatively uniform nitrogen profile. Rapid thermal oxidation may be used to form the dielectric layer. The dielectric layer may have a physical thickness greater than a physical thickness of the second layer.

Abstract: A method for manufacturing a semiconductor device includes forming a first layer adjacent a semiconductor substrate. The first layer may comprise oxygen. The first layer may be subjected to a material comprising nitrogen to form a second layer. The second layer may be oxidized to form a dielectric layer which may have a relatively uniform nitrogen profile. Rapid thermal oxidation may be used to form the dielectric layer. The dielectric layer may have a physical thickness greater than a physical thickness of the second layer.

Abstract: An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density.

Abstract: An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density.

Abstract: An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density.

Abstract: A method of forming an ultra-thin gate oxide (14) for a field effect transistor (10). The gate oxide (14) is formed by combining an oxidizing agent (e.g., N2O, CO2) with an etching agent (e.g., H2) and adjusting the partial pressures to controllably grow a thin (˜12 Angstroms) high quality oxide (14).

Abstract: A method of forming an ultra-thin gate oxide (14) for a field effect transistor (10). The gate oxide (14) is formed by combining an oxidizing agent (e.g., N2O, CO2) with an etching agent (e.g., H2) and adjusting the partial pressures to controllably grow a thin (˜12 Angstroms) high quality oxide (14).

Abstract: This invention pertains generally to the integration of dielectrics with integrated circuits, and more particularly to reaction barriers between high-k dielectrics and an underlying Group IV semiconductor layer. Applications for high permittivity memory cells and gate dielectrics are disclosed. This method has steps of providing a partially completed integrated circuit having a semiconductor layer substantially comprising silicon, where the layer has an exposed face. The method also includes forming an ultra-thin SiC reaction barrier at the exposed face, and depositing a high permittivity storage dielectric on the SiC reaction barrier. Typically, the SiC reaction barrier is less than 25 Å thick, preferably one or two monolayers of SiC.

Abstract: A method of forming an ultra-thin gate oxide (14) for a field effect transistor (10). The gate oxide (14) is formed by combining an oxidizing agent (e.g., N2O, CO2) with an etching agent (e.g., H2) and adjusting the partial pressures to controllably grow a thin (˜12 Angstroms) high quality oxide (14).

Abstract: An embodiment of the instant invention is a method of forming a dielectric layer, the method comprising the steps of: providing a semiconductor substrate (substrate 12), the substrate having a surface; forming an oxygen-containing layer (layer 14) on the semiconductor substrate; and subjecting the oxygen-containing layer to a nitrogen containing plasma (plasma 16) so that the nitrogen is either incorporated into the oxygen-containing layer (see regions 18, 19, and 20) or forms a nitride layer at the surface of the substrate (region 22). Using this embodiment of the instant invention, the dielectric layer can be substantially free of hydrogen. Preferably, the oxygen-containing layer is an SiO.sub.2 layer or it is comprised of oxygen and nitrogen (preferably an oxynitride layer). The plasma is, preferably, a high-density plasma. Preferably, a source of nitrogen is introduced to the plasma to form the nitrogen containing plasma. The source of nitrogen is preferably comprised of a material consisting of: N.sub.

Abstract: A semiconductor device including a single crystal semiconductor host material having a surface; an ultrathin pseudomorphic single crystal epitaxial interlayer formed on the surface of the host material, wherein the interlayer is formed of a material and has a thickness selected so that the material of the interlayer is elastically deformed on the surface of the host material to match the lattice constant of the interlayer material with the lattice constant of the host material; and a further material incompatible with the host material when interfaced directly with the host material, but compatible with the interlayer, provided on the interlayer and thereby interfaced with the host material to perform a predetermined function with respect to the interlayer and the host material.