Patents by Inventor Sunil Murthy
Sunil Murthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11988613Abstract: There is provided a system and method of assisting defect detection on a semiconductor specimen. The method includes obtaining a first map informative of multiple care areas (CAs) to be inspected on a die; creating a plurality of bounding rectangles (BRs) enclosing the multiple CAs; and compacting the plurality of BRs to a set of compacted rectangles to meet a predefined inspection capacity while attempting to minimize a non-CA area enclosed by the set of compacted rectangles, giving rise to a second map informative of the set of compacted rectangles. The compaction comprises constructing an R-tree structure representative of the plurality of BRs and compacted rectangles, and selecting a set of nodes from the R-tree structure based on the predefined inspection capacity and representative of the set of compacted rectangles. The second map is usable for filtering a defect map indicative of defect candidate distribution on the die.Type: GrantFiled: February 14, 2022Date of Patent: May 21, 2024Assignee: Applied Materials Israel Ltd.Inventors: Satyajit Kautkar, Sambit Rout, Sunil Kiran Esetty, Narasimha Murthy Srinivasa Chandan
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Patent number: 10651367Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.Type: GrantFiled: November 28, 2018Date of Patent: May 12, 2020Assignee: Micron Technology, Inc.Inventors: Wei Chen, Sunil Murthy, Witold Kula
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Patent number: 10276781Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.Type: GrantFiled: April 13, 2018Date of Patent: April 30, 2019Assignee: Micron Technology, Inc.Inventors: Wei Chen, Sunil Murthy, Witold Kula
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Publication number: 20190097125Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.Type: ApplicationFiled: November 28, 2018Publication date: March 28, 2019Inventors: Wei Chen, Sunil Murthy, Witold Kula
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Patent number: 10134978Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.Type: GrantFiled: August 2, 2017Date of Patent: November 20, 2018Assignee: Micron Technology, Inc.Inventors: Wei Chen, Jonathan D. Harms, Sunil Murthy
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Publication number: 20180233657Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.Type: ApplicationFiled: April 13, 2018Publication date: August 16, 2018Inventors: Wei Chen, Sunil Murthy, Witold Kula
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Patent number: 9972770Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.Type: GrantFiled: June 28, 2016Date of Patent: May 15, 2018Assignee: Micron Technology, Inc.Inventors: Wei Chen, Sunil Murthy, Witold Kula
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Publication number: 20170358737Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.Type: ApplicationFiled: August 2, 2017Publication date: December 14, 2017Inventors: Wei Chen, Jonathan D. Harms, Sunil Murthy
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Patent number: 9768377Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.Type: GrantFiled: December 2, 2014Date of Patent: September 19, 2017Assignee: Micron Technology, Inc.Inventors: Wei Chen, Jonathan D. Harms, Sunil Murthy
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Publication number: 20160308118Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.Type: ApplicationFiled: June 28, 2016Publication date: October 20, 2016Inventors: Wei Chen, Sunil Murthy, Witold Kula
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Patent number: 9379315Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.Type: GrantFiled: March 12, 2013Date of Patent: June 28, 2016Assignee: Micron Technology, Inc.Inventors: Wei Chen, Sunil Murthy, Witold Kula
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Publication number: 20160155932Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.Type: ApplicationFiled: December 2, 2014Publication date: June 2, 2016Inventors: Wei Chen, Jonathan D. Harms, Sunil Murthy
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Publication number: 20140264663Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.Type: ApplicationFiled: March 12, 2013Publication date: September 18, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Wei Chen, Sunil Murthy, Witold Kula
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Publication number: 20060220164Abstract: A method of manufacturing a sensor is provided. The method includes disposing a sacrificial layer on a substrate, disposing a low-thermal-conductivity layer on the sacrificial layer, and disposing a first set of conductive arms and a second set of conductive arms on the low-thermal-conductivity layer to form a plurality of thermal junctions. The plurality of thermal junctions is adapted to form a plurality of hot junctions and a plurality of cold junctions when subjected to a difference in temperature. The method also includes removing the sacrificial layer and a portion of the low-thermal-conductivity layer to form a cavity therein. The cavity is configured to provide insulation for the plurality of hot junctions. A thermopile sensor is also provided, and a calorimetric gas sensor implementing the thermopile sensor is provided.Type: ApplicationFiled: March 31, 2005Publication date: October 5, 2006Inventors: Sunil Murthy, Anis Zribi, Shankar Chandrasekaran