Abstract: Temperature sensing circuitry implemented on a semiconductor integrated circuit that senses the temperature at a site, digitizes the sensed temperature, and then outputs a signal representing such a sensed temperature. The temperature sensing circuitry converts a voltage signal that is proportional to the temperature to a frequency-based signal, which is converted to a digital bit value. A scalar factor is applied to another voltage signal that is inversely proportional to the temperature to produce a scaled voltage signal. The scaled voltage signal is converted to a second frequency-based signal, which is converted to a digital bit value, and then the two digital bit values are compared. The temperature is determined when the digital bit values substantially match.

Abstract: Temperature sensing circuitry implemented on a semiconductor integrated circuit that senses the temperature at a site, digitizes the sensed temperature, and then outputs a signal representing such a sensed temperature. The temperature sensing circuitry converts a voltage signal that is proportional to the temperature to a frequency-based signal, which is converted to a digital bit value. A scalar factor is applied to another voltage signal that is inversely proportional to the temperature to produce a scaled voltage signal. The scaled voltage signal is converted to a second frequency-based signal, which is converted to a digital bit value, and then the two digital bit values are compared. The temperature is determined when the digital bit values substantially match.

Abstract: A memory device includes a latch having an input to receive a bit value, an input to receive a clock signal, and an output to provide a latched bit value based on the clock signal. The memory device further includes a bit cell including a storage component, and a write row driver configured to enable write access to the bit cell to store the latched bit value at the storage component for a first phase and a second phase of a cycle of the clock signal, the second phase following the first phase, and a read row driver configured to disable read access to the bit cell for the first phase of the cycle of the clock signal and to enable read access to the bit cell for the second phase of the cycle of the clock signal.

Abstract: A memory device includes a latch having an input to receive a bit value, an input to receive a clock signal, and an output to provide a latched bit value based on the clock signal. The memory device further includes a bit cell comprising a storage component, and a write row driver configured to enable write access to the bit cell to store the latched bit value at the storage component for a first phase and a second phase of a cycle of the clock signal, the second phase following the first phase, and a read row driver configured to disable read access to the bit cell for the first phase of the cycle of the clock signal and to enable read access to the bit cell for the second phase of the cycle of the clock signal.