Patents by Inventor Suresh Baskaran

Suresh Baskaran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8012403
    Abstract: Porous ceramic and hybrid ceramic films are useful as low dielectric constant interlayers in semiconductor interconnects. (Hybrid ceramic films are defined as films that contain organic and ceramic molecular components in the structure, as, for example, organosilicates). This invention describes the usefulness of humidity treatments (using specific temperature/humidity treatments as illustrative examples) in increasing mechanical integrity of porous dielectric films with minimal detrimental effect on film porosity or dielectric constant and with no adverse impact on film quality. The efficacy of such treatments is illustrated using surfactant-templated mesoporous silicate films as an example. This invention also describes a specific family of additives to be used with highly pure alkali-metal-free ceramic and hybrid precursors for such dielectric films that will enable better control of the film porosity and quality and lower dielectric constants with the required mechanical integrity.
    Type: Grant
    Filed: September 14, 2001
    Date of Patent: September 6, 2011
    Assignee: Battelle Memorial Institute
    Inventors: Jerome C. Birnbaum, Glen E. Fryxell, Shari Li Xiaohong, Christopher A. Coyle, Glen C. Dunham, Suresh Baskaran, Ralph E. Williford
  • Patent number: 6984298
    Abstract: Disclosed herein is a ceramic part, gas sensor, and method for making the gas sensor. The ceramic part comprises: an insulating layer affixed to a substrate wherein the insulating layer comprising Al2O3 particles; and a glass comprising about 45 to about 69 mole percent SiO2, 0 to about 9 mole percent B2O3, 0 to about 26 mole percent Al2O3, 0 and 25 mole percent SrO, and about 10 to about 26 mole percent RE2O3, where RE2O3 is selected from the group consisting of Y2O3, three valent rare earth oxides, and combinations comprising at least one of the foregoing. In one embodiment of a ceramic part, a gas sensor comprises: an electrolyte layer having disposed on opposite sides thereof a first electrode and a second electrode; and an insulating layer that is in intimate contact with the second electrode, wherein the insulating layer comprises alumina and frit.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: January 10, 2006
    Assignee: Delphi Technologies, Inc.
    Inventors: Kaius K. Polikarpus, Walter T. Symons, Kerry Gross, William J. LaBarge, Suresh Baskaran, Craig Fredrick Habeger, John David Vienna, Jarrod Vincent Crum, John Gerard Darab, Timothy R. Armstrong
  • Publication number: 20050258578
    Abstract: Porous ceramic and hybrid ceramic films are useful as low dielectric constant interlayers in semiconductor interconnects. (Hybrid ceramic films are defined as films that contain organic and ceramic molecular components in the structure, as, for example, organosilicates). This invention describes the usefulness of humidity treatments (using specific temperature/humidity treatments as illustrative examples) in increasing mechanical integrity of porous dielectric films with minimal detrimental effect on film porosity or dielectric constant and with no adverse impact on film quality. The efficacy of such treatments is illustrated using surfactant-templated mesoporous silicate films as an example. This invention also describes a specific family of additives to be used with highly pure alkali-metal-free ceramic and hybrid precursors for such dielectric films that will enable better control of the film porosity and quality and lower dielectric constants with the required mechanical integrity.
    Type: Application
    Filed: September 14, 2001
    Publication date: November 24, 2005
    Inventors: Jerome Birnbaum, Glen Fryxell, Shari Xiaohong, Christopher Coyle, Glen Dunham, Suresh Baskaran, Ralph Williford
  • Patent number: 6843406
    Abstract: A method of joining metal and metal, or metal and ceramic parts, wherein a first metal part is selected and then processed to form a bond coat that will effectively bond to a sealing material which in turn bonds to a second metal or ceramic part without degrading under the operating conditions of electrochemical devices. Preferred first metal parts include alumina forming alloys from the group consisting of ferritic stainless steels (such as Fecralloys), austinetic stainless steels, and superalloys, and chromia forming alloys formed of ferritic stainless steels. In the case of chromia forming ferritic stainless steels, this bond coat consists of a thin layer of alumina formed on the surface, with a diffusion layer between the first metal part and this thin layer. The bond coat provides a good bonding surface for a sealing layer of glass, braze or combinations thereof, while at the same time the diffusion layer provides a durable bond between the thin alumina layer and the first metal part.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: January 18, 2005
    Assignee: Battelle Memorial Institute
    Inventors: Zhenguo Yang, Christopher Andrew Coyle, Suresh Baskaran, Lawrence Andrew Chick
  • Publication number: 20040089238
    Abstract: Vacuum/gas phase reactor embodiments used in gas phase dehydroxylation and alkylation reactions are described in which the substrate could be subjected to high vacuum, heated to target temperature, and treated with silane as quickly and efficiently as possible. To better facilitate the silylation and to increase the efficiency of the process, the reactor is designed to contain quasi-catalytic surfaces which can act both as an “activator” to put species in a higher energy state or a highly activated state, and as a “scrubber” to eliminate possible poisons or reactive by-products generated in the silylation reactions. One described embodiment is a hot filament reactor having hot, preferably metallic, solid surfaces within the reactor's chamber in which wafers having mesoporous silicate films are treated. Another is an IR reactor having upper and lower quartz windows sealing the upper and lower periphery of an aluminum annulus to form a heated chamber.
    Type: Application
    Filed: March 3, 2003
    Publication date: May 13, 2004
    Inventors: Jerome Birnbaum, Gary Maupin, Glen Dunham, Glen Fryxell, Suresh Baskaran
  • Publication number: 20040060967
    Abstract: A method of joining metal and metal, or metal and ceramic parts, wherein a first metal part is selected and then processed to form a bond coat that will effectively bond to a sealing material which in turn bonds to a second metal or ceramic part without degrading under the operating conditions of electrochemical devices. Preferred first metal parts include alumina forming alloys from the group consisting of ferritic stainless steels (such as Fecralloys), austinetic stainless steels, and superalloys, and chromia forming alloys formed of ferritic stainless steels. In the case of chromia forming ferritic stainless steels, this bond coat consists of a thin layer of alumina formed on the surface, with a diffusion layer between the first metal part and this thin layer. The bond coat provides a good bonding surface for a sealing layer of glass, braze or combinations thereof, while at the same time the diffusion layer provides a durable bond between the thin alumina layer and the first metal part.
    Type: Application
    Filed: September 27, 2002
    Publication date: April 1, 2004
    Inventors: Zhenguo Yang, Christopher Andrew Coyle, Suresh Baskaran, Lawrence Andrew Chick
  • Patent number: 6692704
    Abstract: A non-thermal plasma (NTP) reactor structural conductor element includes a base conductor support and a high dielectric constant (“high k”) barrier layer supported by and substantially surrounding the base conductor support to form a structural conductor NTP reactor element. The structural conductor element may comprise a variety of shapes such as plates, sheets, half-box, I shapes, C shapes, or comb shapes, among others. In one embodiment, the dielectric barrier layer includes a coating applied to the base conductor support. In another embodiment, the dielectric barrier layer includes a high k film laminated to the base conductor support. In yet another embodiment, the base conductor support integrally forms the dielectric barrier layer via conversion of surfaces of the base conductor using electrochemical, thermal or chemical means to form the dielectric barrier layer.
    Type: Grant
    Filed: March 19, 2001
    Date of Patent: February 17, 2004
    Assignee: Delphi Technologies, Inc.
    Inventors: David Emil Nelson, Bob X. Li, Mark David Hemingway, Suresh Baskaran, Joachim Kupe, Gregory Stephen Sims, Delbert L. Lessor, Carl Elmer Miller, Darrell R. Herling
  • Publication number: 20030127326
    Abstract: Disclosed herein is a ceramic part, gas sensor, and method for making the gas sensor. The ceramic part comprises: an insulating layer affixed to a substrate wherein the insulating layer comprising Al2O3 particles; and a glass comprising about 45 to about 69 mole percent SiO2, 0 to about 9 mole percent B2O3, 0 to about 26 mole percent Al2O3, 0 and 25 mole percent SrO, and about 10 to about 26 mole percent RE2O3, where RE2O3 is selected from the group consisting of Y2O3, three valent rare earth oxides, and combinations comprising at least one of the foregoing.
    Type: Application
    Filed: January 9, 2002
    Publication date: July 10, 2003
    Inventors: Kaius K. Polikarpus, Walter T. Symons, Kerry Gross, William J. LaBarge, Suresh Baskaran, Craig Fredrick Habeger, John David Vienna, Jarrod Vincent Crum, John Gerard Darab, Timothy R. Armstrong
  • Patent number: 6548113
    Abstract: Vacuum/gas phase reactor embodiments used in gas phase dehydroxylation and alkylation reactions are described in which the substrate could be subjected to high vacuum, heated to target temperature, and treated with silane as quickly and efficiently as possible. To better facilitate the silylation and to increase the efficiency of the process, the reactor is designed to contain quasi-catalytic surfaces which can act both as an “activator” to put species in a higher energy state or a highly activated state, and as a “scrubber” to eliminate possible poisons or reactive by-products generated in the silylation reactions. One described embodiment is a hot filament reactor having hot, preferably metallic, solid surfaces within the reactor's chamber in which wafers having mesoporous silicate films are treated. Another is an IR reactor having upper and lower quartz windows sealing the upper and lower periphery of an aluminum annulus to form a heated chamber.
    Type: Grant
    Filed: November 9, 2000
    Date of Patent: April 15, 2003
    Assignee: Pacific Northwest Division
    Inventors: Jerome Birnbaum, Gary Maupin, Glen Dunham, Glen Fryxell, Suresh Baskaran
  • Patent number: 6537507
    Abstract: A non-thermal plasma reactor element is provided comprising a multi-cell stack prepared from a plurality of formed building blocks of dielectric material, the walls of the building blocks defining a cell having an exhaust passage for flowing gas to be treated therethrough. A conductive print forming an electrode and connector is disposed on at least one wall of each of the cells and outer insulative plates, disposed on opposite ends of the multi-cell stack, are provided to protect the conductive print. The non-thermal plasma reactor element includes cells defined by a single structural dielectric barrier comprising a “conductor-single structural dielectric barrier-exhaust passage-conductor” arrangement, wherein individual cells of the reactor element are defined by a single structural dielectric barrier.
    Type: Grant
    Filed: December 19, 2000
    Date of Patent: March 25, 2003
    Assignee: Delphi Technologies, Inc.
    Inventors: David Emil Nelson, Bob Xiaobin Li, Mark David Hemingway, Darrell R. Herling, Suresh Baskaran
  • Publication number: 20020131916
    Abstract: A non-thermal plasma (NTP) reactor structural conductor element includes a base conductor support and a high dielectric constant (“high k”) barrier layer supported by and substantially surrounding the base conductor support to forma structural conductor NTP reactor element. The structural conductor element may comprise a variety of shapes such as plates, sheets, half-box, I shapes, C shapes, or comb shapes, among others.
    Type: Application
    Filed: March 19, 2001
    Publication date: September 19, 2002
    Inventors: David Emil Nelson, Bob X. Li, Mark David Hemingway, Suresh Baskaran, Joachim Kupe, Gregory Stephen Sims, Delbert L. Lessor, Carl Elmer Miller, Darrell R. Herling
  • Patent number: 6383466
    Abstract: The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.
    Type: Grant
    Filed: December 28, 1998
    Date of Patent: May 7, 2002
    Assignee: Battelle Memorial Institute
    Inventors: Karel Domansky, Glen E. Fryxell, Jun Liu, Nathan J. Kohler, Suresh Baskaran
  • Publication number: 20020034626
    Abstract: The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.
    Type: Application
    Filed: April 18, 2001
    Publication date: March 21, 2002
    Inventors: Jun Liu, Karel Domansky, Xiaohong Li, Glen E. Fryxell, Suresh Baskaran, Nathan J. Kohler, Suntharampillai Thevuthasan, Christopher A. Coyle, Jerome C. Birnbaum
  • Publication number: 20020028163
    Abstract: A non-thermal plasma reactor element is provided comprising a multi-cell stack prepared from a plurality of formed building blocks of dielectric material, the walls of the building blocks defining a cell having an exhaust passage for flowing gas to be treated therethrough. A conductive print forming an electrode and connector is disposed on at least one wall of each of the cells and outer insulative plates, disposed on opposite ends of the multi-cell stack, are provided to protect the conductive print. The non-thermal plasma reactor element includes cells defined by a single structural dielectric barrier comprising a “conductor-single structural dielectric barrier-exhaust passage-conductor” arrangement, wherein individual cells of the reactor element are defined by a single structural dielectric barrier.
    Type: Application
    Filed: December 19, 2000
    Publication date: March 7, 2002
    Inventors: David Emil Nelson, Bob Xiaobin Li, Mark David Hemingway, Darrell R. Herling, Suresh Baskaran
  • Patent number: 6329017
    Abstract: The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.
    Type: Grant
    Filed: October 4, 1999
    Date of Patent: December 11, 2001
    Assignee: Battelle Memorial Institute
    Inventors: Jun Liu, Karel Domansky, Xiaohong Li, Glen E. Fryxell, Suresh Baskaran, Nathan J. Kohler, Suntharampillai Thevuthasan, Christopher A. Coyle, Jerome C. Birnbaum
  • Patent number: 5922299
    Abstract: This invention pertains to surfactant-templated nanometer-scale porosity of a silica precursor solution and forming a mesoporous material by first forming the silica precursor solution into a preform having a high surface area to volume ratio, then rapid drying or evaporating a solvent from the silica precursor solution. The mesoporous material may be in any geometric form, but is preferably in the form of a film, fiber, powder or combinations thereof. The rapid drying or evaporation of solvent from the solution is accomplished by layer thinning, for example spin casting, liquid drawing, and liquid spraying respectively. Production of a film is by layer thinning, wherein a layer of the silica precursor solution is formed on a surface followed by removal of an amount of the silica precursor solution and leaving a geometrically thinner layer of the silica precursor solution from which the solvent quickly escapes via evaporation.
    Type: Grant
    Filed: August 26, 1997
    Date of Patent: July 13, 1999
    Assignee: Battelle Memorial Institute
    Inventors: Paul J. Bruinsma, Suresh Baskaran, Jagannadha R. Bontha, Jun Liu
  • Patent number: 5766784
    Abstract: The invention provides a method for synthesizing a titanium oxide-containing film comprising the following steps:(a) preparing an aqueous solution of a titanium chelate with a titanium molarity in the range of 0.01M to 0.6M.(b) immersing a substrate in the prepared solution,(c) decomposing the titanium chelate to deposit a film on the substrate.The titanium chelate maybe decomposed acid, base, temperature or other means. A preferred method provides for the deposit of adherent titanium oxide films from C2 to C5 hydroxy carboxylic acids. In another aspect the invention is a novel article of manufacture having a titanium coating which protects the substrate against ultraviolet damage. In another aspect the invention provides novel semipermeable gas separation membranes, and a method for producing them.
    Type: Grant
    Filed: April 8, 1996
    Date of Patent: June 16, 1998
    Assignee: Battelle Memorial Institute
    Inventors: Suresh Baskaran, Gordon L. Graff, Lin Song
  • Patent number: 5697043
    Abstract: The present invention is a novel method for freeform fabrication. Specifically, the method of solid freeform fabrication has the steps of:(a) preparing a slurry by mixing powder particles with a suspension medium and a gelling polysaccharide;(b) making a layer by depositing an amount of said powder slurry in a confined region;(c) hardening a selected portion of the layer by applying a gelling agent to the selected portion; and(d) repeating steps (b) and (c) to make successive layers and forming a layered object. In many applications, it is desirable to remove unhardened material followed by heating to remove gellable polysaccharide then sintering.
    Type: Grant
    Filed: May 23, 1996
    Date of Patent: December 9, 1997
    Assignee: Battelle Memorial Institute
    Inventors: Suresh Baskaran, Gordon L. Graff
  • Patent number: RE40299
    Abstract: This invention pertains to surfactant-templated nanometer-scale porosity of a silica precursor solution and forming a mesoporous material by first forming the silica precursor solution into a preform having a high surface area to volume ratio, then rapid drying or evaporating a solvent from the silica precursor solution. The mesoporous material may be in any geometric form, but is preferably in the form of a film, fiber, powder or combinations thereof. The rapid drying or evaporation of solvent from the solution is accomplished by layer thinning, for example spin casting, liquid drawing, and liquid spraying respectively. Production of a film is by layer thinning, wherein a layer of the silica precursor solution is formed on a surface followed by removal of an amount of the silica precursor solution and leaving a geometrically thinner layer of the silica precursor solution from which the solvent quickly escapes via evaporation.
    Type: Grant
    Filed: January 11, 2000
    Date of Patent: May 6, 2008
    Assignee: Battelle Memorial Institute
    Inventors: Paul J. Bruinsma, Suresh Baskaran, Jagannadha R. Bontha, Jun Liu