Patents by Inventor Suresh M. Shrauti

Suresh M. Shrauti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8361835
    Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: January 29, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Valery V. Komin, Hien-Minh Huu Le, David Tanner, James S. Papanu, Philip A. Greene, Suresh M. Shrauti, Roman Gouk, Steven Verhaverbeke
  • Patent number: 8318589
    Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: November 27, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Valery V. Komin, Hien-Minh Huu Le, David Tanner, James S. Papanu, Philip A. Greene, Suresh M. Shrauti, Roman Gouk, Steven Verhaverbeke
  • Publication number: 20120227667
    Abstract: Substrate carrier having multiple emissivity coefficients for thin film processing and more particularly for support of a substrate during a deposition process epitaxially growing a film on the substrate. A front side of the carrier has a first carrier surface upon which the substrate is to be disposed, the first carrier surface having a first emissivity coefficient different than a second emissivity coefficient of a second carrier surface adjacent to the first carrier surface. Selection of the second emissivity coefficient independent of the first emissivity coefficient may modify an amount of energy radiated from the second carrier surface during processing of the substrate. In one embodiment, the second carrier surface has a second emissivity coefficient which is lower than the first emissivity coefficient to reduce heat loss from the carrier surface while maintaining high efficiency energy transfer between the carrier and a substrate.
    Type: Application
    Filed: March 6, 2012
    Publication date: September 13, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Juno Yu-Ting HUANG, Suresh M. SHRAUTI, Alain DUBOUST, David BOUR, Wei-Yung HSU, Liang-Yun CHEN
  • Publication number: 20100311228
    Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
    Type: Application
    Filed: March 29, 2010
    Publication date: December 9, 2010
    Inventors: VALERY V. KOMIN, Hien-Minh Huu Le, David Tanner, James S. Papanu, Philip A. Greene, Suresh M. Shrauti, Roman Gouk, Steven Verhaverbeke
  • Publication number: 20100311204
    Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
    Type: Application
    Filed: March 29, 2010
    Publication date: December 9, 2010
    Inventors: VALERY V. KOMIN, Hien-Minh Huu Le, David Tanner, James S. Papanu, Philip A. Greene, Suresh M. Shrauti, Roman Gouk, Steven Verhaverbeke