Abstract: Methods, systems, and apparatuses include allocating a temporary parity buffer to a parity group. A write command is received that includes user data and is directed to a portion of memory included in a zone which is included in the parity group. A memory identifier is determined for the portion of memory. Parity group data is received from the temporary parity buffer using the memory identifier. Updated parity group data is determined using the parity group data and the user data. The updated parity group data is sent to the temporary parity buffer.

Abstract: An apparatus includes a memory component having a plurality of ball grid array (BGA) components, wherein each respective one of the BGA components includes a plurality of memory blocks and a BGA component controller and firmware adjacent the plurality of memory blocks to manage the plurality of memory blocks. The apparatus further includes a processing device, included in the memory component, to perform memory operations on the BGA components.

Abstract: A processing device determines a duration for executing a portion of an erase operation based on a plurality of execution times of erase operations performed on a memory device. The processing device executes the portion of the erase operation. Responsive to detecting expiration of the duration for executing the erase operation, the processing logic executes an erase suspend operation to suspend the erase operation. Responsive to detecting completion of the erase suspend operation, the processing logic executes one or more commands. The processing device further executes an erase resume operation to resume the erase operation on the memory device.

Abstract: Aspects of the present disclosure configure a system component, such as a memory sub-system controller, to provide a configurable buffer device. The configuration buffer device is coupled between a processing device and a set of memory components. The configurable buffer device can be configured based on configuration data to couple a first quantity of front-side channels to a second quantity of back-side channels. The configuration data can be received from an external source, such as the processing device, or can be stored in a configuration register at manufacture. The configuration data can also be generated or determined based on one or more pins of the buffer device that control how many font-side channels and how many back-side channels to enable/disable.

Abstract: A memory device includes memory dies, each memory die including a memory array and control logic, operatively coupled with the memory array, to perform peak power management (PPM) operations. The PPM operations include receiving a request to perform an operation, determining whether to initiate a PPM priority override procedure, and in response to determining to initiate the PPM priority override procedure, performing the PPM priority override procedure to execute the operation. Performing the PPM priority override procedure includes reconfiguring each high current breakpoints as a respective low current breakpoint to execute the operation.

Abstract: A value setting associated with one or more parameters of a host-side interface and a memory-side interface of an input/output (I/O) expander is configured to enable Open NAND Flash Interface (ONFI)-compliant communications between a host system and a target memory die of a memory sub-system. The I/O expander processes one or more ONFI-compliant communications between the host system and the target memory die, wherein the one or more ONFI-compliant communications relate to execution of a memory access operation.

Abstract: One or more requests are received from a host system while a media management scan is in progress on a memory component in a memory sub-system. The media management scan in progress is suspended. The request received from the host system are serviced. Once the host system is serviced, the media management scan is resumed on the memory component.

Abstract: An input/output (I/O) command referencing a logical address of a memory sub-system is received by an active input/output expander (AIOE). The I/O command is received from a memory sub-system controller via the AIOE. The AIOE identifies a physical block address corresponding to the logical block address. The AIOE identifies, among a plurality of memory devices, a memory device associated with the physical block address. The AIOE converts the I/O command received via the serial interface to a parallel interface compliant I/O command. The AIOE sends the parallel interface compliant I/O command to the memory device.

Abstract: A method is implemented for a memory sub-system that detects a sequential write pattern in a write sequence for a memory device in a set of commands received from a host, detects current bandwidth utilization deviating from a write bandwidth utilization performance target, in response to detecting the sequential write pattern, and adjusts write bandwidth utilization to conform to the write bandwidth utilization target, in response to detecting the current bandwidth utilization deviating from the write bandwidth utilization performance target.

Abstract: An apparatus includes a memory component having a plurality of ball grid array (BGA) components, wherein each respective one of the BGA components includes a plurality of memory blocks and a BGA component controller and firmware adjacent the plurality of memory blocks to manage the plurality of memory blocks. The apparatus further includes a processing device, included in the memory component, to perform memory operations on the BGA components.

Abstract: Apparatus having a plurality of sets of memory devices and a multiplexer, wherein each set of memory devices of the plurality of sets of memory devices corresponds to a respective enable signal of a plurality of enable signals, wherein, for each set of memory devices of the plurality of sets of memory devices, each memory device of that set of memory devices is configured to receive commands in response to the respective enable signal for that set of memory devices having a particular logic level, and wherein, for each set of memory devices of the plurality of sets of memory devices, the multiplexer is configured to selectively connect input/output signal lines of that set of memory devices to an interface of the apparatus in response to the respective enable signal for that set of memory devices.

Abstract: A selection device includes a multiplexer component, an input channel configured to couple at least the multiplexer to the memory sub-system controller, and a set of output channels coupled to the multiplexer component. Each of the set of output channels is further coupled to a respective memory device of a set of memory devices. Each of the set of output channels is configured to transmit data between the multiplexer component and the respective memory device. The selection device further includes a decoder component that is coupled to the input channel and each of the set of memory devices. The decoder component is configured to receive, from the memory sub-system controller via the input channel, a signal including a first signal portion configured to enable the decoder component and a second signal portion configured to identify a particular output channel of the set of output channels that is to transmit the data between the multiplexer component and the corresponding memory device.

Abstract: A processing device determines a duration for executing a portion of an erase operation based on a plurality of execution times of erase operations performed on a memory device. The processing device executes the portion of the erase operation. Responsive to detecting expiration of the duration for executing the erase operation, the processing logic executes an erase suspend operation to suspend the erase operation. Responsive to detecting completion of the erase suspend operation, the processing logic executes one or more commands. The processing device further executes an erase resume operation to resume the erase operation on the memory device.

Abstract: An apparatus includes a memory component having a plurality of ball grid array (BGA) components, wherein each respective one of the BGA components includes a plurality of memory blocks and a BGA component controller and firmware adjacent the plurality of memory blocks to manage the plurality of memory blocks. The apparatus further includes a processing device, included in the memory component, to perform memory operations on the BGA components.

Abstract: A processing device receives a request to perform an erase operation on a memory device. The processing device executes a portion of the erase operation during a first time period. The processing device further executes an erase suspend operation to suspend the erase operation during the first time period. Responsive to detecting a completion of the erase suspend operation, the processing device receives one or more commands directed to the memory device. The processing device also executes the one or more commands during a second time period. Responsive to the expiration of the second time period, the processing device executes an erase resume operation to resume the erase operation on the memory device.

Abstract: A value setting associated with one or more parameters of a host-side interface and a memory-side interface of an input/output (I/O) expander is configured to enable Open NAND Flash Interface (ONFI)-compliant communications between a host system and a target memory die of a memory sub-system. The I/O expander processes one or more ONFI-compliant communications between the host system and the target memory die, wherein the one or more ONFI-compliant communications relate to execution of a memory access operation.

Abstract: A memory device protection manager determines an estimated remaining life of a physical memory device. By comparing the estimated remaining life of the physical memory device to a threshold value, the memory device protection manager determines whether a drive protection condition has been triggered. When the drive protection condition is triggered, the memory device protection manager modifies a write performance for subsequent data units to a modified write performance rate. The modified write performance rate is an upper limit on the write performance for the subsequent data units.

Abstract: A read command to read a target memory die of a memory sub-system is received from a host system via a host-side interface of an active input/output (I/O) expander. The active I/O expander identifies a page address corresponding to the target memory die and decodes the read command to send to a memory stack associated with the page address corresponding to the target memory die. Read data is received via a memory-side interface of the active I/O expander from the memory stack including the target memory die. A signal conditioning operation is performed on the read data to generate conditioned read data. The active I/O expander sends, via the host-side interface, the conditioned read data to the host system.

Abstract: A processing device receives a request to perform an erase operation on a memory device. The processing device executes a portion of the erase operation during a first time period. The processing device further executes an erase suspend operation to suspend the erase operation during the first time period. Responsive to detecting a completion of the erase suspend operation, the processing device receives one or more commands directed to the memory device. The processing device also executes the one or more commands during a second time period. Responsive to the expiration of the second time period, the processing device executes an erase resume operation to resume the erase operation on the memory device.

Abstract: A read command to read a target memory die of a memory sub-system is received from a host system via a host-side interface of an active input/output (I/O) expander. The active I/O expander identifies a page address corresponding to the target memory die and decodes the read command to send to a memory stack associated with the page address corresponding to the target memory die. Read data is received via a memory-side interface of the active I/O expander from the memory stack including the target memory die. A signal conditioning operation is performed on the read data to generate conditioned read data. The active I/O expander sends, via the host-side interface, the conditioned read data to the host system.