Abstract: Various implementations described herein are directed to device having a memory block and a sense amplifier coupled to the memory block. The device may include a bias generator that applies a bias signal to the sense amplifier for regulating read current to the sense amplifier for faster activation of the memory block.

Abstract: Various implementations described herein are directed to device having a clock generator that provides write reference signals. The device may include a voltage divider that receives the write reference signals and provides an output reference signal based on write polarity of the write reference signals. The device may include a voltage regulator that receives the output reference signal and provides a regulated voltage to a load based on the output reference signal.

Abstract: Various implementations described herein are directed to device having a memory block and a sense amplifier coupled to the memory block. The device may include a bias generator that applies a bias signal to the sense amplifier for regulating read current to the sense amplifier for faster activation of the memory block.

Abstract: Various implementations described herein are directed to device having a clock generator that provides write reference signals. The device may include a voltage divider that receives the write reference signals and provides an output reference signal based on write polarity of the write reference signals. The device may include a voltage regulator that receives the output reference signal and provides a regulated voltage to a load based on the output reference signal.

Abstract: Various implementations described herein refer to an integrated circuit having a sense amplifier that operates with a clock signal, and the sense amplifier may be biased with a bias signal that affects duration of the clock signal. The integrated circuit may include a delay circuit coupled to the sense amplifier, and the delay circuit may turn-off the clock signal. The delay circuit may have a current-starved delay stage that receives an input signal having a falling edge and provides a current-starved delay signal biased by the bias signal that also biases the sense amplifier.

Abstract: An SRAM cell in a bit interleaved memory architecture with two phase sequential write scheme to achieve 100% write ability and the SNM target with bit interleaved architecture in SRAM.

Abstract: Various implementations described herein refer to an integrated circuit having a sense amplifier that operates with a clock signal, and the sense amplifier may be biased with a bias signal that affects duration of the clock signal. The integrated circuit may include a delay circuit coupled to the sense amplifier, and the delay circuit may turn-off the clock signal. The delay circuit may have a current-starved delay stage that receives an input signal having a falling edge and provides a current-starved delay signal biased by the bias signal that also biases the sense amplifier.