Abstract: The present invention is directed to a method of controlling polishing processes based upon x-ray fluorescence measurements. In one illustrative embodiment, the method comprises providing a wafer comprised of a layer of insulating material having a barrier metal layer formed thereabove and a layer of copper formed above the barrier metal layer, performing a chemical mechanical polishing operation to remove the barrier metal layer, irradiating at least one area of the wafer with x-rays, and analyzing x-rays leaving the irradiated area to determine the presence of material comprising the barrier metal layer.

Abstract: The present invention is directed to a method of controlling the formation of metal layers. In one illustrative embodiment, the method comprises depositing a layer of metal above a structure, irradiating at least one area of the layer of metal, and analyzing an x-ray spectrum of x-rays leaving the irradiated area to determine a thickness of the layer of metal. In further embodiments of the present invention, a plurality of areas, and in some cases at least five areas, of the layer of metal are irradiated. The layer of metal may be comprised of, for example, titanium, cobalt, nickel, copper, tantalum, etc.