Abstract: An interposer is presented. The interposer includes an interposer base having first and second surfaces. A redistribution layer is disposed on a first surface of the interposer base. The interposer has at least one interposer pad coupled to the redistribution layer. It also includes at least one interposer contact on the second surface. The interposer contact is electrically coupled to the interposer pad via the redistribution layer. The interposer also includes at least one interposer via through the interposer base for coupling the interposer contact to the redistribution layer. The interposer via includes reflowed conductive material of the interposer contact.

Abstract: An interposer is presented. The interposer includes an interposer base having first and second surfaces. A redistribution layer is disposed on a first surface of the interposer base. The interposer has at least one interposer pad coupled to the redistribution layer. It also includes at least one interposer contact on the second surface. The interposer contact is electrically coupled to the interposer pad via the redistribution layer. The interposer also includes at least one interposer via through the interposer base for coupling the interposer contact to the redistribution layer. The interposer via includes reflowed conductive material of the interposer contact.

Abstract: An interposer is presented. The interposer includes an interposer base having first and second surfaces. A redistribution layer is disposed on a first surface of the interposer base. The interposer has at least one interposer pad coupled to the redistribution layer. It also includes at least one interposer contact on the second surface. The interposer contact is electrically coupled to the interposer pad via the redistribution layer. The interposer also includes at least one interposer via through the interposer base for coupling the interposer contact to the redistribution layer. The interposer via includes reflowed conductive material of the interposer contact.

Abstract: This invention includes a heat sink structure for use in a semiconductor package that includes a ring structure with down sets and a heat sink connected to the ring structure. The down sets can be slanted or V-shaped. The invention also includes a method of manufacturing a semiconductor package that includes inserting a substrate with an attached semiconductor chip in a first mold portion, placing a heat sink structure on top of a portion of the substrate, placing a mold release film onto a second mold portion, clamping a second mold portion onto a portion of the heat sink structure, injecting an encapsulant into a mold cavity, wherein the encapsulant surrounds portions of the substrate, semiconductor chip and heat sink structure, curing the encapsulant, whereby the heat sink structure adheres to the encapsulant and singulating the encapsulated assembly to form a semiconductor package.

Abstract: A stacked die semiconductor package that includes a substrate with a plurality of adhesive portions arranged in a manner to create at least one gap between the adhesive portions. The package also includes a first semiconductor chip having a non-active surface in contact with the adhesive portions, and an active surface being electrically connected to the substrate. In the package, a second semiconductor chip the non-active surface of the second semiconductor chip is attached to the non-active surface of the first semiconductor chip by a layer of adhesive therebetween. The active surface of the second semiconductor chip is electrically connected to the substrate. An encapsulant material covers the first and second semiconductor chips and their associated electrical connections. The encapsulating material fills the at least one gap between the plurality of adhesive portions and thereby encapsulates the second semiconductor chip and its associated electrical connection.

Abstract: An interposer is presented. The interposer includes an interposer base having first and second surfaces. A redistribution layer is disposed on a first surface of the interposer base. The interposer has at least one interposer pad coupled to the redistribution layer. It also includes at least one interposer contact on the second surface. The interposer contact is electrically coupled to the interposer pad via the redistribution layer. The interposer also includes at least one interposer via through the interposer base for coupling the interposer contact to the redistribution layer. The interposer via includes reflowed conductive material of the interposer contact.

Abstract: A semiconductor package includes a plurality of first leads, each with a top outer portion removed from the lead and an outer end, and a plurality of second leads, each with a bottom outer portion removed from the lead and an outer end. The first and second leads alternate with each other along an edge of the package. Also, the outer ends of the first leads form a first row along the edge of the package and the outer ends of the second leads form a second row along the edge of the package. In one embodiment, the first and second rows are parallel to each other and an encapsulant covers at least a portion of the first and second leads.

Abstract: A semiconductor package includes a plurality of first leads, each with a top outer portion removed from the lead and an outer end, and a plurality of second leads, each with a bottom outer portion removed from the lead and an outer end. The first and second leads alternate with each other along an edge of the package. Also, the outer ends of the first leads form a first row along the edge of the package and the outer ends of the second leads form a second row along the edge of the package. In one embodiment, the first and second rows are parallel to each other and an encapsulant covers at least a portion of the first and second leads.

Abstract: A semiconductor package includes a plurality of first leads, each with a top outer portion removed from the lead and an outer end, and a plurality of second leads, each with a bottom outer portion removed from the lead and an outer end. The first and second leads alternate with each other along an edge of the package. Also, the outer ends of the first leads form a first row along the edge of the package and the outer ends of the second leads form a second row along the edge of the package. In one embodiment, the first and second rows are parallel to each other and an encapsulant covers at least a portion of the first and second leads.

Abstract: A stacked die semiconductor package that includes a substrate with a plurality of adhesive portions arranged in a manner to create at least one gap between the adhesive portions. The package also includes a first semiconductor chip having a non-active surface in contact with the adhesive portions, and an active surface being electrically connected to the substrate. In the package, a second semiconductor chip the non-active surface of the second semiconductor chip is attached to the non-active surface of the first semiconductor chip by a layer of adhesive therebetween. The active surface of the second semiconductor chip is electrically connected to the substrate. An encapsulant material covers the first and second semiconductor chips and their associated electrical connections. The encapsulating material fills the at least one gap between the plurality of adhesive portions and thereby encapsulates the second semiconductor chip and its associated electrical connection.

Abstract: A package for an IC includes a carrier with a cavity formed on one of the major surfaces. Bumps of a semiconductor die are mated to contact pads located on the bottom of the cavity. The die is attached to the major surface of the carrier. The major surface creates a support which securely holds the chip in place with adhesive for assembly.

Abstract: A semiconductor package includes a plurality of first leads, each with a top outer portion removed from the lead and an outer end, and a plurality of second leads, each with a bottom outer portion removed from the lead and an outer end. The first and second leads alternate with each other along an edge of the package. Also, the outer ends of the first leads form a first row along the edge of the package and the outer ends of the second leads form a second row along the edge of the package. In one embodiment, the first and second rows are parallel to each other and an encapsulant covers at least a portion of the first and second leads.

Abstract: This invention includes a heat sink structure for use in a semiconductor package that includes a ring structure with down sets and a heat sink connected to the ring structure. The down sets can be slanted or V-shaped. The invention also includes a method of manufacturing a semiconductor package that includes inserting a substrate with an attached semiconductor chip in a first mold portion, placing a heat sink structure on top of a portion of the substrate, placing a mold release film onto a second mold portion, clamping a second mold portion onto a portion of the heat sink structure, injecting an encapsulant into a mold cavity, wherein the encapsulant surrounds portions of the substrate, semiconductor chip and heat sink structure, curing the encapsulant, whereby the heat sink structure adheres to the encapsulant and singulating the encapsulated assembly to form a semiconductor package.

Abstract: A package for an IC includes a carrier with a cavity formed on one of the major surfaces. Bumps of a semiconductor die are mated to contact pads located on the bottom of the cavity. The die is attached to the major surface of the carrier. The major surface creates a support which securely holds the chip in place with adhesive for assembly.