Abstract: A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semiconductor optical device includes a multilayer structure and buried layers. The multilayer structure is constituted by a cladding layer having an n-type conductivity, an active region formed from an active layer or photoabsorption layer, and a cladding layer having a p-type conductivity which are successively formed on a semiconductor substrate having the first crystallographic orientation. The buried layers are made of a ruthenium-doped semi-insulating semiconductor crystal and formed on two sides of the mesa-stripe-like multilayer structure.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semiconductor optical device includes, on a semiconductor substrate, a mesa-stripe-like multilayer structure constituted by at least an n-cladding layer, an active region formed from an active layer or a photoabsorption layer, and a p-cladding layer, and a buried layer in which two sides of the multilayer structured are buried using a semi-insulating semiconductor crystal. The buried layer includes a diffusion enhancement layer which is adjacent to the mesa-stripe-like multilayer structure and enhances diffusion of a p-impurity, and a diffusion suppression layer which is adjacent to the diffusion enhancement layer and suppresses diffusion of a p-impurity. A method of manufacturing a semiconductor optical device is also disclosed.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical device is fabricated by forming the Ru-doped semi-insulating semiconductor layer on a Fe-doped semi-insulating InP substrate, and forming a semiconductor crystal layer to which a p-type impurity is doped.

Abstract: A semiconductor optical device includes a multilayer structure and buried layers. The multilayer structure is constituted by a cladding layer having an n-type conductivity, an active region formed from an active layer or photoabsorption layer, and a cladding layer having a p-type conductivity which are successively formed on a semiconductor substrate having the first crystallographic orientation. The buried layers are made of a ruthenium-doped semi-insulating semiconductor crystal and formed on two sides of the mesa-stripe-like multilayer structure.

Abstract: A semiconductor optical device includes, on a semiconductor substrate, a mesa-stripe-like multilayer structure constituted by at least an n-cladding layer, an active region formed from an active layer or a photoabsorption layer, and a p-cladding layer, and a buried layer in which two sides of the multilayer structured are buried using a semi-insulating semiconductor crystal. The buried layer includes a diffusion enhancement layer which is adjacent to the mesa-stripe-like multilayer structure and enhances diffusion of a p-impurity, and a diffusion suppression layer which is adjacent to the diffusion enhancement layer and suppresses diffusion of a p-impurity. A method of manufacturing a semiconductor optical device is also disclosed.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical device is fabricated by forming the Ru-doped semi-insulating semiconductor layer on a Fe-doped semi-insulating InP substrate, and forming a semiconductor crystal layer to which a p-type impurity is doped.

Abstract: A wiring 19 of a device directly detects a voltage from a plurality of scanning electrodes 1, a voltage detecting electrode 701 detects a voltage from a plurality of the scanning electrodes 1. A voltage variation component such as voltage distortion of the detected voltage which adversely affects on an image display is taken out, inverted, and negative fed back to the scanning electrode 1. A negative feedback loop provides the negative feedback of the voltage detected from and fed back to the scanning electrode 1, this therefore suppresses the disadvantageous voltage variation such as a distortion voltage which tends to arise in the scanning electrode 1.

Abstract: A wiring 19 of a device directly detects a voltage from a plurality of scanning electrodes 1, a voltage detecting electrode 701 detects a voltage from a plurality of the scanning electrodes 1. A voltage variation component such as voltage distortion of the detected voltage which adversely affects on an image display is taken out, inverted, and negative fed back to the scanning electrode 1. A negative feedback loop provides the negative feedback of the voltage detected from and fed back to the scanning electrode 1, this therefore suppresses the disadvantageous voltage variation such as a distortion voltage which tends to arise in the scanning electrode 1.

Abstract: In liquid crystal display system 10 which has a matrix arrangement of scanning electrode group 12 and data electrode group 13 and in which each electrode group is driven by a pulse like waveform, this is a liquid crystal display system in which a lower level region than the pulse wave peak value is formed in at least one of the rising or the falling portions of the pulse wave which drives at least one of the electrode groups.A liquid crystal display system with a uniform display with extremely little display non-uniformity can be obtained.

Abstract: A wiring 19 of a device directly detects a voltage from a plurality of scanning electrodes 1, a voltage detecting electrode 701 detects a voltage from a plurality of the scanning electrodes 1. A voltage variation component such as voltage distortion of the detected voltage which adversely affects on an image display is taken out, inverted, and negative fed back to the scanning electrode 1. A negative feedback loop provides the negative feedback of the voltage detected from and fed back to the scanning electrode 1, this therefore suppresses the disadvantageous voltage variation such as a distortion voltage which tends to arise in the scanning electrode 1.

Abstract: There is disclosed an imaging agent for diagnosis comprising a compound composed of a polynuclear type compound of the formula I or II: ##STR1## wherein each X is a hydrogen atom or a bifunctional ligand, at least one of them are bifunctional ligand and m or n is an integer of 1 to 6, and at least one metal ion being coordinated with at least one bifunctional ligand moiety, said metal ion being selected from the group consisting of metal ions having the atomic number of 21-29, 31, 32, 37-39, 42-44, 49 and 56-83.

Abstract: There is disclosed an imaging agent for diagnosis comprising a compound composed of a polynuclear type compound of the formula I or II: ##STR1## wherein each X is a hydrogen atom or a bifunctional ligand, at least one of them are bifunctional ligand and m or n is an integer or 1 to 6, and at least one metal ion being coordinated with at least one bifunctional ligand moiety, said metal ion being selected from the group consisting of metal ions having the atomic number of 21-29, 31, 32, 37-39, 42-44, 49 and 56-83.

Abstract: There is disclosed a nuclear magnetic resonance imaging agent comprising a complex compound composed of (a) a dialdehyde-saccharide having a molecular weight of from 500 to 10,000, at least one of the constituent monosaccharides of which is oxidation-cleaved, (b) at least one complexing agent which is chemically coupled to an aldehyde group of the dialdehyde-saccharide and (c) a paramagnetic metal ion which is chemically coupled to the complexing agent.