Abstract: Provided is an electroconductive laminate having a substrate and an electroconductive film formed on the substrate, wherein the electroconductive film has a multilayer structure having an oxide layer and a metal layer alternately laminated from the substrate side in a total layer number of (2n+1) (wherein n is an integer of at least 1); the oxide layer predominantly contains zinc oxide and titanium oxide having a refractive index of at least 2.3; the oxide layer has an atomic ratio of titanium to a total amount of titanium and zinc of 15-50 atomic %; and the metal layer predominantly contains silver or a silver alloy. Also provided is a process for producing the electroconductive laminate.

Abstract: To provide an electroconductive laminate excellent in electrical conductivity and visible light transparency, an electromagnetic wave shielding film for a plasma display, and a protective plate for a plasma display having excellent electromagnetic wave shielding properties, a broad transmission/reflection band and a high visible light transmittance. An electroconductive laminate 10 comprising a substrate 11, and an electroconductive film 12 having a three-layer structure having a first oxide layer 12a, a metal layer 12b and a second oxide layer 12c laminated sequentially from the substrate 11 side, or having a 3×n layer structure (wherein n is an integer of at least 2) having the above three-layer structure repeated, wherein the first oxide layer 12a contains “zinc oxide” and “titanium oxide or niobium oxide”, the metal layer 12b is a layer containing silver, and the second oxide layer 12c contains a mixture of zinc oxide and aluminum oxide, or the like.

Abstract: Providing a tin oxide target suitable for the formation of a transparent conductive film by DC sputtering method, DC pulse sputtering method or AC sputtering method. A sputtering target which is used for forming a transparent conductive film by a sputtering method, comprising tin oxide as the main component, and at least one element selected from the A dopant group consisting of zinc, niobium, titanium, magnesium, aluminum and zirconium and at least one element selected from the B dopant group consisting of tungsten, tantalum and molybdenum, as dopants.

Abstract: To provide an electroconductive laminate excellent in electrical conductivity and visible light transparency, an electromagnetic wave shielding film for a plasma display, and a protective plate for a plasma display having excellent electromagnetic wave shielding properties, a broad transmission/reflection band and a high visible light transmittance. An electroconductive laminate 10 comprising a substrate 11, and an electroconductive film 12 having a three-layer structure having a first oxide layer 12a, a metal layer 12b and a second oxide layer 12c laminated sequentially from the substrate 11 side, or having a 3×n layer structure (wherein n is an integer of at least 2) having the above three-layer structure repeated, wherein the first oxide layer 12a contains “zinc oxide” and “titanium oxide or niobium oxide”, the metal layer 12b is a layer containing silver, and the second oxide layer 12c contains a mixture of zinc oxide and aluminum oxide, or the like.

Abstract: To provide an electroconductive laminate having a broad transmission/reflection band and having excellent electrical conductivity (electromagnetic wave shielding properties), visible light transparency and near infrared shielding properties, and an electromagnetic wave shielding film for a plasma display and a protective plate for a plasma display. An electroconductive laminate 10 comprising a substrate 11 and an electroconductive film 12 formed on the substrate 11, wherein the electroconductive film 12 has a multilayer structure having an oxide layer 12a and a metal layer 12b alternately laminated from the substrate 11 side in a total layer number of (2n+1) (wherein n is an integer of at least 1), the oxide layer 12a contains zinc oxide and a high refractive index metal oxide having a refractive index of at least 2.

Abstract: A sputtering target is provided that includes SiC and metallic Si and has an atomic ratio of C to Si of from 0.5 to 0.95 and a density of from 2.75×103 kg/m3 to 3.1×103 kg/m3. The sputtering target is capable of forming at high speed a film that contains SiO2 as the main component and has a low refractive index. The sputtering target can be produced by a process in which a molded product of SiC is impregnated with molten Si.

Abstract: A sputtering target which comprises SiC and metallic Si and has an atomic ratio of C to Si of from 0.5 to 0.95 and a density of from 2.75×103 kg/m3 to 3.1×103 kg/m3 and which is capable of forming a film comprising SiO2 as the main component and having a low refractive index at a high speed; a process for its production; and a film-forming method.

Abstract: A process for producing sputtering targets, which comprises molding a mixture of a powder of a high-melting substance having a melting point of 900° C. or above with a powder of a low-melting metal having a melting point of 700° C. or below at a temperature below the melting point of the low-melting metal under heat and pressure.