Abstract: According to one aspect of the technique of the present disclosure, there is provided a method of displaying substrate arrangement data, including: (a) setting each of a transport parameter for determining at least an arrangement of substrates to be loaded into a substrate retainer and carrier information of a carrier storing the substrates to be loaded into the substrate retainer; (b) creating the substrate arrangement data of a case where the substrates are loaded into the substrate retainer based on the transport parameter and the carrier information set in (a); and (c) displaying the substrate arrangement data at least comprising data representing the arrangement of the substrates in a state where the substrates are loaded in the substrate retainer.

Abstract: There is provided a technique that includes at least one load port capable of mounting a substrate storage container that stores a substrate, a controller configured to be capable of performing: a switching control to switch a first function of using the at least one load port to load or unload the substrate storage container and a second function of mounting the substrate storage container on the at least one load port; and an erroneous operation prevention control to execute an erroneous operation prevention operation to the substrate storage container arranged on the at least one load port according to use modes associated with the first function and the second function; and a process chamber configured to process the substrate.

Abstract: There is provided a technique that includes a processor configured to be capable of executing a process recipe to process a substrate; and a pressure controller configured to be capable of controlling a pressure of a process chamber, in which the substrate is processed, by adjusting an opening degree of a pressure regulating valve provided to an exhaust line of the process chamber, wherein when controlling the pressure of the process chamber, the pressure controller adjusts the opening degree of the pressure regulating valve and outputs information of the opening degree, and wherein while receiving the information of the opening degree from the pressure controller and monitoring an open/close state of the pressure regulating valve, the processor is configured to, when the information of the opening degree is a preset value, be capable of determining whether or not opening/closing of the pressure regulating valve happens.

Abstract: According to one aspect of a technique the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (a) processing a substrate accommodated in a process chamber by supplying a process gas to the substrate; and (b) removing deposits adhering to a structure in the process chamber by supplying a cleaning gas to the process chamber, wherein a period T2 from a completion of (b) to a start of an (n+1)th execution of (a) is set to be shorter than a period T1 from a completion of an nth execution of (a) to a start of (b), and wherein n is an integer equal to or greater than 1.

Abstract: There is provided a configuration that includes: at least one transfer mechanism configured to transfer a substrate and at least one processing mechanism configured to process the substrate; an earthquake detector configured to detect an earthquake; and a controller configured to control the at least one transfer mechanism and the at least one processing mechanism according to a detection result of the earthquake detector, wherein the controller is configured to be capable of performing a stopping operation of the at least one transfer mechanism according to a P wave (initial tremor wave) and an S wave (principal fluctuation wave).

Abstract: A substrate processing apparatus includes: an operation unit, which is provided with a storage unit that stores a plurality of recipes including a recipe for processing a member that constitutes the inside of a reactor in which substrate processing is performed, and a recipe for processing an exhaust pipe through which a gas released from the inside of the reactor flows, the operation unit further being provided with a display unit that displays a setting condition for executing the recipes on an operation screen; and a control unit that executes the recipe that meets the setting condition. The operation unit includes a recipe control unit, which controls, based on the setting condition, execution of the recipe for processing the member constituting the inside of the reactor in which the substrate processing is performed, and the recipe for processing the exhaust pipe, among the recipes stored in the storage unit.

Abstract: Provided is a method of automatically setting, in a recipe, a process parameter (PP) according to the number of substrates to be processed. The method includes (a) displaying a process parameter of a process recipe on a display unit; (b) displaying a parameter name in a process parameter file on the display unit; (c) generating a first recipe by substituting the process parameter with the parameter name; (d) downloading the first recipe and one of a plurality of condition tables corresponding to the selected number of substrates when the number of substrates to be processed in a processing chamber is selected; and (e) generating a second recipe by substituting the process parameter of the downloaded one of the condition tables for the parameter name in the downloaded first recipe.

Abstract: A substrate processing apparatus includes: an operation unit, which is provided with a storage unit that stores a plurality of recipes including a recipe for processing a member that constitutes the inside of a reactor in which substrate processing is performed, and a recipe for processing an exhaust pipe through which a gas released from the inside of the reactor flows, the operation unit further being provided with a display unit that displays a setting condition for executing the recipes on an operation screen; and a control unit that executes the recipe that meets the setting condition. The operation unit includes a recipe control unit, which controls, based on the setting condition, execution of the recipe for processing the member constituting the inside of the reactor in which the substrate processing is performed, and the recipe for processing the exhaust pipe, among the recipes stored in the storage unit.

Abstract: Provided is a method of automatically setting, in a recipe, a process parameter (PP) according to the number of substrates to be processed. The method includes (a) displaying a process parameter of a process recipe on a display unit; (b) displaying a parameter name in a process parameter file on the display unit; (c) generating a first recipe by substituting the process parameter with the parameter name; (d) downloading the first recipe and one of a plurality of condition tables corresponding to the selected number of substrates when the number of substrates to be processed in a processing chamber is selected; and (e) generating a second recipe by substituting the process parameter of the downloaded one of the condition tables for the parameter name in the downloaded first recipe.

Abstract: Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers.

Abstract: Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers.