Abstract: A two-dimensional photonic crystal laser includes: electrodes; an active layer; and a two-dimensional photonic crystal layer in which modified refractive index regions are disposed to be shifted by different shift amounts from respective lattice points or/and are disposed at the respective lattice points with different areas, the shift amount or/and the area is/are modified with a composite modulation period and expressed by a modulation phase ?(r?) expressed using a vector r? indicating a position of each lattice point of the two-dimensional lattice, a vector kn? indicating a combination of an inclination angle and an azimuthal angle of each of n laser beams mutually differing in the inclination angle and/or the azimuthal angle, and an amplitude An and a phase exp(i?n) determined for each n and the amplitude An and/or the phase exp(i?n) for each value of n differ(s) from each other in at least two different values of n.

Abstract: A two-dimensional photonic-crystal surface-emitting laser includes: a two-dimensional photonic-crystal layer; an active layer provided on one surface side of the two-dimensional photonic-crystal layer; and a reflection layer provided on the other surface side of the two-dimensional photonic-crystal layer or on a side opposite to the two-dimensional photonic-crystal layer so as to be spaced apart from the two-dimensional photonic-crystal layer, wherein a distance d between surfaces of the two-dimensional photonic-crystal layer and the reflection layer facing each other is set such that a radiation coefficient difference ??v=(?v1??v0), which is a value obtained by subtracting a radiation coefficient ?v0 of a fundamental mode having the smallest loss from a radiation coefficient ?v1 of a first higher order mode having the second smallest loss among the light amplified in the two-dimensional photonic-crystal layer, is 1 cm?1 or more.

Abstract: A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.

Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes in a surface of the guide layer by etching, the holes being two-dimensionally periodically arranged within a plane parallel to the guide layer; (d) etching the guide layer by using an etchant having selectivity to the {0001} plane and a {10?10} plane of the guide layer; (e) supplying a gas containing a nitrogen source to cause mass transport without supplying a group-III material gas, and then supplying the group-III material gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer in this order on the first embedding layer.

Abstract: A method of manufacturing a surface-emitting laser, includes (a) forming a first semiconductor layer including a photonic-crystal (PC) layer, (b) growing, on the first semiconductor layer, an active layer and a second semiconductor layer, (c) performing spectrometry in which a thickness from a surface of the second semiconductor layer to a position where the spectrometry light is reflected by the PC layer is measured, (d) forming a translucent electrode having a thickness calculated based on an optical path length corresponding to the thickness obtained by the spectrometry on the second semiconductor layer, and (e) forming a reflection layer on the translucent electrode, in which the layer thickness of the translucent electrode is determined such that a light intensity of interference light of (i) direct diffracted light radiated from the PC layer and (ii) reflected diffracted light radiated from the PC layer and reflected by the reflection layer is larger than a light intensity of the direct diffracted light

Abstract: A multiplexing optical system includes a light source, a lens and a lens array. The light source includes a plurality of light emitting elements of surface emitting lasers. The lens is configured to change and condense optical paths of laser light beams emitted from the light emitting elements. The lens array includes a plurality of lens regions arrayed so as to correspond to respective optical paths of the laser light beams changed by the lens, and is configured to condense the laser light beams by the lens regions to form a multiplexed beam.

Abstract: A two-dimensional photonic-crystal laser includes: a substrate made of an n-type semiconductor; a p-type cladding layer on an upper side of the substrate made of a p-type semiconductor; an active layer on an upper side of the cladding layer; a two-dimensional photonic-crystal layer on an upper side of the active layer including a plate-shaped base body made of an n-type semiconductor wherein modified refractive index areas whose refractive index differs from the base body are arranged; a first tunnel layer between the substrate and cladding layer made of an n-type semiconductor having a carrier density higher than the substrate's; a second tunnel layer between the first tunnel and cladding layers, made of a p-type semiconductor having a carrier density higher than the p-type semiconductor layer's; a first electrode on a lower side of or in the substrate; and a second electrode on an upper side of the two-dimensional photonic-crystal layer.

Abstract: A semiconductor laser includes: a first semiconductor layer part including a semiconductor layer of a first conductivity type; an active layer disposed on the first semiconductor layer part; a second semiconductor layer part disposed on the active layer and including a semiconductor layer of a second conductivity type; a third semiconductor layer p100415-0433art disposed on the second semiconductor layer part and including a semiconductor layer containing a first concentration of an impurity of the first conductivity type; and a fourth semiconductor layer part disposed on the third semiconductor layer part and including a semiconductor layer containing a second concentration of the impurity of the first conductivity type, the second concentration being lower than the first concentration. The third semiconductor layer part is directly bonded to the fourth semiconductor layer part. At least one of the third semiconductor layer part or the fourth semiconductor layer part includes a photonic crystal.

Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.

Abstract: A photonic-crystal surface-emitting laser element includes: a first semiconductor layer formed by embedding a photonic crystal layer that includes air holes arranged with two-dimensional periodicity in a formation region in a plane parallel to the photonic crystal layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a mesa portion with a mesa shape formed at a surface of the second semiconductor layer, wherein the mesa portion is located inside the formation region of the air holes when viewed in a direction perpendicular to the photonic crystal layer.

Abstract: In some implementations, a system enables users to create dynamically configurable applications that can be dynamically configured and adjusted. An application that runs on the server system in a first configuration is configured using a first configuration template. Data indicating (i) that the application is being accessed on a computing device in the first configuration, and (ii) a request to adjust the first configuration of the application is received. Operations are then performed while the application is being accessed on the computing device in the first configuration. A second configuration template that specifies a second configuration of the application corresponding to the request included in the received data is generated. The application is adjusted using the second configuration template to run in the second configuration. An instruction is provided to the computing device to enable the computing device to access the application running in the second configuration.

Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes which are two-dimensionally periodically arranged within the guide layer; (d) etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; (e) supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer on the first embedding layer, The step (d) includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.

Abstract: A surface-emitting laser element includes: a first guide layer including a photonic crystal layer that is formed on a c plane of a group-3 nitride semiconductor and includes air holes arranged with two-dimensional periodicity in a plane parallel to the photonic crystal layer, and an embedding layer that is formed on the photonic crystal layer and closes the air holes; an active layer formed on the first guide layer; and a second guide layer formed on the active layer, wherein an air hole set including at least a main air hole and a sub-air hole smaller in size than the main air hole is arranged at each square lattice point in the plane parallel to the photonic crystal layer, and wherein the main air hole has a regular-hexagonal prism shape, a long-hexagonal prism shape, or an elliptic cylindrical shape with a major axis parallel to a <11-20> axis.

Abstract: A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.

Abstract: A two-dimensional photonic-crystal surface-emitting laser includes an active layer, a two-dimensional photonic crystal, and electrodes. The two-dimensional photonic crystal contains a plate-shaped base material arranged on one side of the active layer and different refractive index portions arranged at lattice points of a predetermined lattice in the base material and having a refractive index different from that of the base material, a band edge frequency for each position in an electric current supply region, which is at least a part of the two-dimensional photonic crystal, is monotonically increased in one direction parallel to the base material. Such a two-dimensional photonic crystal occurs when the different refractive index portion has a refractive index smaller than that of the base material, a filling factor, which is a ratio of a volume occupied by the different refractive index portion in a unit lattice constituting the lattice, is monotonically increased in the one direction.

Abstract: In some implementations, a system enables users to create dynamically configurable applications that can be dynamically configured and adjusted. An application that runs on the server system in a first configuration is configured using a first configuration template. Data indicating (i) that the application is being accessed on a computing device in the first configuration, and (ii) a request to adjust the first configuration of the application is received. Operations are then performed while the application is being accessed on the computing device in the first configuration. A second configuration template that specifies a second configuration of the application corresponding to the request included in the received data is generated. The application is adjusted using the second configuration template to run in the second configuration. An instruction is provided to the computing device to enable the computing device to access the application running in the second configuration.

Abstract: A two-dimensional photonic-crystal surface-emitting laser includes an active layer; and a photonic-crystal layer including a two-dimensional photonic-crystal light-amplification portion that is a first two-dimensional photonic-crystal region provided in a plate-shaped base body disposed on one side of the active layer, and includes an amplification-portion photonic band gap which is a photonic band gap formed between two photonic bands having a band edge at a predetermined point in a reciprocal lattice space, and a two-dimensional photonic-crystal light-reflection portion that is a second two-dimensional photonic-crystal region provided around the two-dimensional photonic-crystal light-amplification portion, and includes a reflection-portion photonic band gap which is a photonic band gap formed between two photonic bands having a band edge at the predetermined point of the reciprocal lattice space, wherein energy ranges of the amplification-portion photonic band gap and the reflection-portion photonic band ga

Abstract: The 3D sensing system includes: a PC laser array in which PC laser elements are arranged on a plane; a control unit configured to control an operation mode of a laser light source; a driving unit configured to execute a drive control of the PC laser array in accordance with an operation mode controlled by the control unit; a light receiving unit configured to receive reflected light that is laser light emitted from the PC laser array and reflected from a measuring object; a signal processing unit configured to execute signal processing of the reflected light received by the light receiving unit in accordance with the operation mode; and a distance calculation unit configure to execute calculation processing of a distance to the measuring object with respect to a signal processed by the signal processing unit, in accordance with the operation mode, and to output distance data.

Abstract: A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) growing a first cladding layer of a first conductive type on a substrate; (b) growing a first optical guide layer of the first conductive type on the first cladding layer; (c) forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after the planarizing at least one side surface of the holes is a {10-10} facet.

Abstract: A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.