Patents by Inventor Susumu Sanai

Susumu Sanai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010019810
    Abstract: Phase-change type, reversible optical information recording medium, being possible for recording, reproducing, erasing, and rewriting of information, by use of a laser beam. This invention consists of recording thin film of ternary elements, for example, containing Ge, Te, Sb/or Bi or quaternary elements containing the fourth element of Se with which a part of Te is replaced, which is established on such surface—flat substrates as glass or plastics. In this case, the component ratio of Te and Se is selected not to be excess for other elements, such as Ge, Sb/or Bi so as to be fixed as stable compounds of stoichiometric compositions of GeTe, Sb2Te3/or Bi2Te3, or GeSe, Sb2Se3/Bi2Se3 when crystallized. Strictly speaking, a concentration of each component is selected to have proper ratio of the number of atomes each other so as to represent whole composition as the sum of each component. By this treatment, it is possible to have high crystallization speed and long cyclability of recording/erasing.
    Type: Application
    Filed: January 22, 2001
    Publication date: September 6, 2001
    Inventors: Noboru Yamada, Kunio Kimura, Masatoshi Takao, Susumu Sanai
  • Patent number: 6268107
    Abstract: Phase-change type, reversible optical information recording medium, being possible for recording, reproducing, erasing, and rewriting of information, by use of a laser beam. This invention, consists of recording thin film of ternary elements, for example, containing Ge, Te, Sb/or Bi or quaternary elements containing the fourth element of Se with which a part of Te is replaced, which is established on such surface—flat substrates as glass or plastics. In this case, the component ratio of Te and Se is selected not to be excess for other elements, such as Ge, Sb/or Bi so as to be fixed as stable compounds of stoichiometric compositions of GeTe, Sb2Te3/or Bi2Te3, or GeSe, Sb2Se3/Bi2Se3 when crystallized. Strictly speaking, a concentration of each component is selected to have proper ratio of the number of atoms each other so as to represent whole composition as the sum of each component. By this treatment, it is possible to have high crystallization speed and long cyclability of recording/erasing.
    Type: Grant
    Filed: April 28, 1993
    Date of Patent: July 31, 2001
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Noboru Yamada, Kunio Kimura, Masatoshi Takao, Susumu Sanai
  • Patent number: 5294523
    Abstract: A rewritable phase-change type optical information recording medium having a recording film made of a material containing Te or In as a major component and further containing B or C.
    Type: Grant
    Filed: May 6, 1993
    Date of Patent: March 15, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ken'chi Nagata, Susumu Sanai, Noboru Yamada, Masatoshi Takao
  • Patent number: 5278011
    Abstract: Phase-change type, reversible optical information recording medium, being possible for recording, reproducing, erasing, and rewriting of information, by use of a laser beam. This invention consists of recording thin film of ternary elements, for example, containing Ge, Te, Sb/or Bi or quaternary elements containing the fourth element of Se with which a part of Te is replaced, which is established on such surface-flat substrates as glass or plastics. In this case, the component ratio of Te and Se is selected not to be excess for other elements, such as Ge, Sb/or Bi so as to be fixed as stable compounds of stoichiometric compositions of GeTe, Sb.sub.2 Te.sub.3 /or Bi.sub.2 Te.sub.3, or GeSe, Sb.sub.2 Se.sub.3 /Bi.sub.2 Se.sub.3 when crystallized. Strictly speaking, a concentration of each component is selected to have proper ratio of the number of atomes each other so as to represent whole composition as the sum of each component.
    Type: Grant
    Filed: April 28, 1993
    Date of Patent: January 11, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Noboru Yamada, Kunio Kimura, Masatoshi Takao, Susumu Sanai
  • Patent number: 4939013
    Abstract: Optical information active layer mainly composed of a quaternary system of Te-Ge-Sn-Au, with composition ratios of Te, Ge and Sn that lie within an area represented by points A B C D and E on FIG. 1, with an additional amount of Au that is 1-40 atomic % of the quaternary system of Te-Ge-Sn-Au. The optical information active layer can be melted readily by a laser diode thereby achieving a high recording sensitivity, because it contains Te.sub.2 Au alloy having low melting point, CHR and erasability after repeated use and long term storage are small, and since excessive Te in the information active layer is stabilized by formings of Ge Te Su Te and Au Te.
    Type: Grant
    Filed: March 9, 1989
    Date of Patent: July 3, 1990
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kunio Kimura, Noboru Yamada, Susumu Sanai, Eiji Ohno
  • Patent number: 4443276
    Abstract: A permanent magnetic alloy characterized in that phosphorus of 0.6% or less by weight is added with respect to an Mn--Al--C alloy of 100% by weight comprising manganese of 68.0% to 73.0% by weight, carbon of (1/10)Mn--6.6)% to (1/3Mn--22.2)% by weight, and the remainder aluminum.
    Type: Grant
    Filed: December 28, 1982
    Date of Patent: April 17, 1984
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Susumu Sanai, Kiyoshi Kojima
  • Patent number: RE42222
    Abstract: Phase-change type, reversible optical information recording medium, being possible for recording, reproducing, erasing, and rewriting of information, by use of a laser beam. This invention, consists of recording thin film of ternary elements, for example, containing Ge, Te, Sb/or Bi or quaternary elements containing the fourth element of Se with which a part of Te is replaced, which is established on such surface—flat substrates as glass or plastics. In this case, the component ratio of Te and Se is selected not to be excess for other elements, such as Ge, Sb/or Bi so as to be fixed as stable compounds of stoichiometric compositions of GeTe, Sb2Te3/or Bi2Te3, or GeSe, Sb2Se3/Bi2Se3 when crystallized. Strictly speaking, a concentration of each component is selected to have proper ratio of the number of atoms each other so as to represent whole composition as the sum of each component. By this treatment, it is possible to have high crystallization speed and long cyclability of recording/erasing.
    Type: Grant
    Filed: March 14, 2003
    Date of Patent: March 15, 2011
    Assignee: Matsushita Electronic Industrial Co., Ltd.
    Inventors: Norboru Yamada, Kunio Kimura, Masatoshi Takao, Susumu Sanai