Patents by Inventor Suvi P. Haukka
Suvi P. Haukka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11975357Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.Type: GrantFiled: December 9, 2021Date of Patent: May 7, 2024Assignee: ASM IP Holding B.V.Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
-
Publication number: 20240047197Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: ApplicationFiled: October 20, 2023Publication date: February 8, 2024Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, Vamsi Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie, Viljami J. Pore
-
Patent number: 11830732Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: GrantFiled: September 9, 2021Date of Patent: November 28, 2023Assignee: ASM IP Holding B.V.Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, Vamsi Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie, Viljami Pore
-
Publication number: 20230343601Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.Type: ApplicationFiled: June 23, 2023Publication date: October 26, 2023Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
-
Patent number: 11728175Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.Type: GrantFiled: December 22, 2020Date of Patent: August 15, 2023Assignee: ASM IP HOLDING B.V.Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
-
Publication number: 20230253182Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: March 22, 2023Publication date: August 10, 2023Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko Tuominen, Chiyu Zhu
-
Patent number: 11640899Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.Type: GrantFiled: October 25, 2021Date of Patent: May 2, 2023Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
-
Publication number: 20230069459Abstract: The present disclosure is directed to methods and systems for depositing a material within a gap of a substrate in a cyclic deposition process. The methods and systems utilize an inhibitor to preferentially blocks chemisorption of a subsequently introduced first precursor at a portion of available chemisorption sites in the gap to promote deeper penetration of the first precursor into the gap and/or more uniform chemisorption of the first precursor in the gap used in forming a desired material.Type: ApplicationFiled: August 29, 2022Publication date: March 2, 2023Inventors: Suvi P. Haukka, Eva E. Tois, Varun Sharma
-
Patent number: 11587783Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).Type: GrantFiled: November 23, 2020Date of Patent: February 21, 2023Assignee: ASM IP HOLDING B.V.Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
-
Publication number: 20230011277Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.Type: ApplicationFiled: June 24, 2022Publication date: January 12, 2023Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
-
Patent number: 11525184Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.Type: GrantFiled: May 27, 2021Date of Patent: December 13, 2022Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore
-
Publication number: 20220367173Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.Type: ApplicationFiled: July 21, 2022Publication date: November 17, 2022Inventors: Suvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen
-
Patent number: 11430656Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.Type: GrantFiled: November 29, 2016Date of Patent: August 30, 2022Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen
-
Patent number: 11387107Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.Type: GrantFiled: October 23, 2020Date of Patent: July 12, 2022Assignee: ASM IP HOLDING B.V.Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
-
Publication number: 20220208542Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: ApplicationFiled: September 9, 2021Publication date: June 30, 2022Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, Vamsi Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie
-
Publication number: 20220193720Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.Type: ApplicationFiled: December 9, 2021Publication date: June 23, 2022Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
-
Publication number: 20220051872Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: October 25, 2021Publication date: February 17, 2022Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
-
Publication number: 20220025513Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.Type: ApplicationFiled: October 13, 2021Publication date: January 27, 2022Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg
-
Patent number: 11230769Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: GrantFiled: May 22, 2020Date of Patent: January 25, 2022Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
-
Patent number: 11213853Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.Type: GrantFiled: October 18, 2019Date of Patent: January 4, 2022Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers