Abstract: An apparatus for dispensing fluid during semiconductor substrate processing operations comprises an enclosure having a first side and a second side. The enclosure comprises a first processing station and a second processing station. The second processing station is positioned adjacent to the first processing station. In addition, the substrate processing apparatus includes a first dispense arm configured to deliver a fluid to the first processing station wherein the first dispense arm is positioned between the first side and the first processing station and a second dispense arm configured to deliver the fluid to the second processing station wherein the second dispense arm is positioned between the second side and the second processing station. The substrate processing apparatus also comprises a first rinse arm configured to deliver a rinsing fluid to the first processing station and a second rinse arm configured to deliver the rinsing fluid to the second processing station.

Abstract: An apparatus for dispensing fluid during semiconductor substrate processing operations comprises an enclosure having a first side and a second side. The enclosure comprises a first processing station and a second processing station. The second processing station is positioned adjacent to the first processing station. In addition, the substrate processing apparatus includes a first dispense arm configured to deliver a fluid to the first processing station wherein the first dispense arm is positioned between the first side and the first processing station and a second dispense arm configured to deliver the fluid to the second processing station wherein the second dispense arm is positioned between the second side and the second processing station. The substrate processing apparatus also comprises a first rinse arm configured to deliver a rinsing fluid to the first processing station and a second rinse arm configured to deliver the rinsing fluid to the second processing station.

Abstract: An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction.

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract: Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.

Abstract: Embodiments of the invention provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed. Embodiments of the invention provide a hybrid deposition system configured to deposit a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP cell. Other aspects provide an electroless deposition system configured to deposit a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides an electroless deposition system configured to form a capping layer over substrate interconnects. The system includes a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.

Abstract: Embodiments of the invention generally provide a substrate spin rinse dry cell that may be used in a semiconductor processing system. The cell generally includes a cell body defining an interior processing volume, and a rotatable substrate support member positioned in the processing volume. The rotatable substrate support member includes a rotatable hub assembly having a plurality of upstanding substrate engaging members extending therefrom, and a central member positioned radially inward of the plurality of upstanding substrate engaging members, the central member having a plurality of backside fluid dispensing nozzles and at least one backside gas dispensing nozzle positioned thereon.

Abstract: A spin-rinse-dryer (SRD) includes a substrate support adapted to hold and rotate a substrate, and a source of fluid adapted to supply fluid to the surface of a substrate positioned on the substrate support. The SRD also includes at least one shield positioned to receive fluid displaced from a substrate rotating on the substrate support. The shield includes a substrate-facing surface that has been particle-blasted to cause the substrate-facing surface to have a hydrophilic characteristic.

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract: An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction.

Abstract: An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction.