Patents by Inventor Sylin-Ming Jang

Sylin-Ming Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming intermetal dielectric with SOG etchback and CMP
    Patent number: 5702980
    Abstract: A defect free intermetal dielectric, IMD, and method of forming the defect free IMD are described. The IMD uses spacers formed by means of etchback of a layer of spin-on-glass, SOG. In order to use an oxide layer formed by means of plasma enhanced tetra-ethyl-ortho-silicate, PE-TEOS, as part of the IMD an oxide cap layer formed using plasma enhanced chemical vapor deposition, PE-CVD, is used to isolate the SOG spacers from the PE-TEOS formed oxide layer. By isolating the PE-TEOS formed oxide layer from the SOG spacers a reliable and defect free IMD is achieved.
    Type: Grant
    Filed: March 15, 1996
    Date of Patent: December 30, 1997
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd
    Inventors: Chen-Hua Douglas Yu, Sylin-Ming Jang