Abstract: A process for forming a semiconductor layer, especially with a view to photovoltaic applications, and more particularly to a process for forming a semiconductor layer of I-III-VI2 type by heat treatment and chalcogenization of a metallic precursor of I-III type, the process comprising: a heating step under an inert atmosphere during which the temperature increases uniformly up to a first temperature of between 460° C. and 540° C., in order to enable the densification of the metallic precursor, and a chalcogenization step beginning at said first temperature and during which the temperature continues to increase up to a second temperature, a stabilization temperature, of between 550° C. and 600° C., in order to enable the formation of the semiconductor layer. The formation of a semiconductor layer, or equivalently of an absorber, having a gain in conversion efficiency of around 4%, is thus advantageously achieved.

Abstract: A technique to form metallic nanodots in a two-step process involving: (1) reacting a silicon-containing gas precursor (e.g., silane) to form silicon nuclei over a dielectric film layer; and (2) using a metal precursor to form metal nanodots where the metal nanodots use the silicon nuclei from step (1) as nucleation points. Thus, the original silicon nuclei are a core material for a later metallic encapsulation step. Metallic nanodots have applications in devices such as flash memory transistors.

Abstract: A device and method include forming a mask on a substrate supporting a plurality of metallic nanocrystals such that a portion of the metallic nanocrystals is exposed. Protective shells are formed about the exposed metallic nanocrystals. Unprotected metallic nanocrystals are removed.

Abstract: A method of forming a device includes forming protective shells about metallic nanocrystals supported by a substrate. The metallic nanocrystals having protective shells are encapsulated with a layer formed with process parameters that are not compatible with the integrity of unprotected metallic nanocrystals.

Abstract: A technique to form metallic nanodots in a two-step process involving: (1) reacting a silicon-containing gas precursor (e.g., silane) to form silicon nuclei over a dielectric film layer; and (2) using a metal precursor to form metal nanodots where the metal nanodots use the silicon nuclei from step (1) as nucleation points. Thus, the original silicon nuclei are a core material for a later metallic encapsulation step. Metallic nanodots have applications in devices such as flash memory transistors.