Abstract: Disclosed is an integrated circuit comprising storage circuits, these circuits themselves comprising insulation transistors to which a determined positive bias voltage may be applied. This bias voltage is determined by means of a first bias circuit. The disclosed circuit comprises a second bias circuit whose time constant in response to a voltage step is smaller than the time constant of the first circuit in response to the same step, this second circuit making it possible to reduce the response time of the first bias circuit.

Abstract: In a voltage-limiting circuit, the voltage to be limited is applied to the terminals of a resistive line, and the current flowing in this line is amplified by a current mirror that thus produces a reference current. A current-controlled voltage source receives this reference current and produces a reference voltage. This reference voltage is given to a hysteresis comparator that switches over for two distinct values of the voltage to be regulated. The disclosed device is particularly useful in the field of the load pumps used in electrically programmable memories.

Abstract: A voltage detection circuit includes a first resistive arm receiving an internal voltage to produce a basic current, current amplification circuitry to produce a reference current proportional to the basic current, a second resistive arm to produce a reference voltage representing the reference current, a voltage source to produce a control voltage from the reference voltage and a logic circuit to produce a binary signal from the control voltage, the state of the binary signal representing the value of the internal voltage.

Abstract: The disclosure relates to an integrated circuit including an internal supply circuit. In the disclosed circuit, an analog voltage output circuit enables the connection of an output of this internal supply circuit to a connection pin of the integrated circuit. It is thus possible to make measurements, without difficulty, of the value of the internal voltage produced. The analog voltage output circuit is arranged in such a way that it is possible, firstly, to enforce a voltage from outside on the output of the internal supply circuit and, secondly, to insulate the output of the internal supply circuit from the connection pin.

Abstract: In a voltage-limiting circuit, the voltage to be limited is applied to the terminals of a resistive line, and the current flowing in this line is amplified by a current mirror that thus produces a reference current. A current-controlled voltage source receives this reference current and produces a reference voltage. This reference voltage is given to a hysteresis comparator that switches over for two distinct values of the voltage to be regulated. The disclosed device is particularly useful in the field of the load pumps used in electrically programmable memories.

Abstract: A voltage booster circuit using at least one capacitor. This capacitor receives a clock signal at one terminal, and a second terminal of the capacitor is connected, firstly, to a supply terminal by means of a precharging transistor and, secondly, to an output by means of an insulation transistor. The disclosed device includes control circuits for controlling the transistors such that they are not on at the same time and such that the voltages that control them are greater than the highest potential present at their source or at their drain.

Abstract: A voltage regulator circuit having one input to receive a voltage to be limited, this input being connected to a ground by means of a limiting transistor. To control this transistor, a comparator and a dissymetrical differential stage are used. The differential stage receives the voltage to be limited and a reference voltage produced by means of a Zener diode, and supplies the comparator with voltages lower than those that it receives. The output of the comparator is connected to the control gate of the limiting transistor. This regulator circuit can advantageously be used to regulate a voltage produced by a voltage multiplier within an electrically programmable memory.

Abstract: In a line decoder circuit capable of working at low selection voltages, selection transistors are series-connected between an input terminal and an inverter whose output is connected to an output terminal. The inverter has two transistors, respectively a P type transistor and an N type transistor, that are series-connected. The control gate of the first transistor is connected to the selection transistors, while the control gate of the second transistor is connected to the input terminal.

Abstract: An integrated circuit memory comprising redundancy circuits with batteries of fuses to store the addresses of defective memory elements to be replaced by redundancy elements. The circuit used to read the state of the fuse comprises a current-voltage converter constituted by an inverter and a transistor. To prevent uncertainty over the state of the fuse when the power is turned on, two additional inverters in series are used between the outputs of the first inverter and the gate of a feedback transistor. These inverters are highly asymmetrical in opposite directions. This avoids the need for a power-on-reset circuit.