Abstract: A photonic assembly comprises: a photonic device comprising an output guide and an input guide cooperating with, respectively, a first output and a first input; a photonic element having a second output and a second input optically coupled to the first input and the first output; an optical isolator interposed in a first path between the first output and the second input, and imposing a first size on radiation propagating along the first path; and adjustment means interposed in a second path between the first input and the second output, the adjustment means being configured to impose on radiation propagating along the second path a second size equal to the first size.

Abstract: A photonic chip includes at least one photonic circuit comprising at least one laser source for providing a first radiation, referred to as local oscillator, to an optical mixer and for providing an emission radiation to a coupling device, the local oscillator and the emission radiation having a predetermined polarization. The coupling device is configured to propagate in free space, from a measuring surface, the emission radiation in the form of an emission light beam, to receive, in return, on the measuring surface a reflected light beam and to guide it toward the optical mixer as reflected radiation having the predetermined polarization. The optical mixer generates a measurement signal by interferometric pulse of the local oscillator and the reflected radiation. The present disclosure also relates to an optical component comprising such a photonic chip.

Abstract: A photonic device comprises: —a support layer, —an optical layer extending in a main plane (x, y), subdivided into at least a first region and a second region adjacent in the main plane (x, y), and comprising a first optical waveguide in the first region and a second optical waveguide in the second region, —a stack of III-V semiconductor compounds, arranged on a dielectric layer, in the first region, —an intermediate layer, between the optical layer and the support layer, comprising a thermally conductive material forming a single-piece block, arranged in line with the first region and an optical and/or electrical cladding material arranged in line with the second region. A method is employed for manufacturing such a device.

Abstract: A method is used for assembling an optical part and a photonic chip, the optical part comprising a plurality of optical pathways to be aligned with a plurality of input-output areas. The photonic chip comprises a light source, a photo detector and an alignment input-output. The optical part is provided with a reflector on at least one alignment pathway, and the photonic chip and the optical part are actively aligned relative to one other by exploiting the measurement of the signal provided by the photo detector of the chip using the optical power transmitted by the light source, reflected by the reflector and recoupled to the photo detector. The present disclosure also relates to the photonic chip and to a component comprising the chip joined to the optical part.

Abstract: A photonic device for providing light radiation comprises a wave guide, an N-type semiconductor layer covering the wave guide and an active region formed by a stack of layers made of III-V materials. The photonic device also comprises a plurality of P-type semiconductor pillars arranged on, and in contact with, the active region. At least a first metal pad is in ohmic contact with the free portion of the N-type layer and at least a second metal pad is in ohmic contact with the P-type pillars.

Abstract: Optical beam forming at the inputs/outputs of a photonic chip and to the spectral broadening of the light coupled to the chip. The photonic chip comprises an optical waveguide layer supported on a substrate. The chip includes an optical waveguide structure made of silicon and a coupling surface grating. The photonic chip has a front face on the side facing the coupling surface grating and a rear face on the side facing the substrate. A reflecting collimation structure is integrated in the rear face to modify the mode size of an incident light beam. The coupling surface grating is designed to receive light from the optical waveguide structure and to form a light beam directed to the reflecting collimation structure. The invention further relates to the method for producing such a chip.

Abstract: A photonic assembly comprises: a photonic device comprising an output guide and an input guide cooperating with, respectively, a first output and a first input; a photonic element having a second output and a second input optically coupled to the first input and the first output; an optical isolator interposed in a first path between the first output and the second input, and imposing a first size on radiation propagating along the first path; and adjustment means interposed in a second path between the first input and the second output, the adjustment means being configured to impose on radiation propagating along the second path a second size equal to the first size.

Abstract: A hybrid semiconductor laser component comprising at least one first emitting module comprising an active zone shaped to emit electromagnetic radiation at a given wavelength; and an optical layer comprising at least one first waveguide optically coupled with the active zone, the waveguide forming with the active zone an optical cavity resonating at the given wavelength. The hybrid semiconductor laser component also comprises a heat-dissipating semiconductor layer, the heat-dissipating semiconductor layer being in thermal contact with the first emitting module on a surface of the first emitting module that is opposite the optical layer. The invention also relates to a method for manufacturing such a hybrid semiconductor laser component.

Abstract: A laser device includes a III-V heterostructure amplifying medium; a silicon optical waveguide having a coupling section facing a central portion of the amplifying medium, a propagation section and a first transition section between the coupling section and the propagation section; and a first and a second reflective structure allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium. The coupling section includes a refractive index disruption region provided with micro-reflectors designed to reduce the thickness and/or the width of the coupling section. The first reflective structure is formed in a section of the waveguide with a first thickness. The second reflective structure is formed in a section of the waveguide, which has the first thickness and which is separated from the coupling section by a second transition section of the waveguide, the second transition section having a second thickness that is greater than the first thickness.

Abstract: The invention relates to a process for fabricating a photonic chip including steps of transferring a die to an actual transfer region of the receiving substrate comprising a central region entirely covered by the die and a peripheral region having a free surface, a first waveguide lying solely in the central region, and a second waveguide lying in the peripheral region; depositing an etch mask on a segment of the die and around the actual transfer region; and dry etching a free segment of the die, the free surface of the peripheral region then being partially etched.

Abstract: Optical beam forming at the inputs/outputs of a photonic chip and to the spectral broadening of the light coupled to the chip. The photonic chip comprises an optical waveguide layer supported on a substrate. The chip includes an optical waveguide structure made of silicon and a coupling surface grating. The photonic chip has a front face on the side facing the coupling surface grating and a rear face on the side facing the substrate. A reflecting collimation structure is integrated in the rear face to modify the mode size of an incident light beam. The coupling surface grating is designed to receive light from the optical waveguide structure and to form a light beam directed to the reflecting collimation structure. The invention further relates to the method for producing such a chip.

Abstract: A photonic chip includes an optical layer bonded, at a bonding interface, to an interconnection layer, the thickness of the optical layer being smaller than 15 ?m, a primary via that extends through the interconnection layer solely between a lower face and the bonding interface, an electrical terminal chosen from the group consisting of an electrical contact embedded in the interior of the optical layer and of an electrical track produced on an upper face, a second via that extends the primary via into the interior of the optical layer in order to electrically connect the primary via to the electrical terminal, this secondary via extending in the interior of the optical layer from the bonding interface to the electrical terminal, the maximum diameter of this secondary via being smaller than 3 ?m.

Abstract: A photonic chip includes an optical layer bonded, via a bonding interface, to a carrier, and a laser source having a waveguide encapsulated in an encapsulating sublayer of the optical layer, the waveguide having a first electrical contact embedded in the encapsulating sublayer. The photonic chip also includes an interconnect metal network forming a via that extends, in the optical layer, from the bonding interface to the first embedded electrical contact of the waveguide, the interconnect metal network having metal vias that electrically connect to one another metals lines that extend mainly parallel to the plane of the chip, the metal lines being arranged one above the other within the optical layer.

Abstract: This method of fabricating a modulator comprises: following the bonding of a substrate onto an encapsulated semiconductor layer containing a first electrode of the modulator and prior to the formation of a second electrode of the modulator, the method comprises the removal (522) of a base substrate onto which the encapsulated semiconductor layer is deposited in such a manner as to expose a face of a buried layer of dielectric material, situated under the buried semiconductor layer, without modifying the thickness of the buried layer by more than 5 nm, and the formation (524, 528) of the second electrode is implemented directly on this exposed face of the buried layer such that, once the second electrode has been formed, it is the buried layer which directly forms a dielectric layer interposed between proximal ends of the electrodes of the modulator.

Abstract: A hybrid semiconductor laser component comprising at least one first emitting module comprising an active zone shaped to emit electromagnetic radiation at a given wavelength; and an optical layer comprising at least one first waveguide optically coupled with the active zone, the waveguide forming with the active zone an optical cavity resonating at the given wavelength. The hybrid semiconductor laser component also comprises a heat-dissipating semiconductor layer, the heat-dissipating semiconductor layer being in thermal contact with the first emitting module on a surface of the first emitting module that is opposite the optical layer. The invention also relates to a method for manufacturing such a hybrid semiconductor laser component.

Abstract: The invention relates to a process for fabricating a photonic chip (1) comprising steps of transferring a die to an actual transfer region Zre of the receiving substrate (20) comprising a central region Zc entirely covered by the die and a peripheral region Zp having a free surface (25), a first waveguide lying solely in the central region Zc, and a second waveguide lying in the peripheral region Zp; depositing an etch mask (31) on a segment of the die (10) and around the actual transfer region Zre; and dry etching a free segment of the die (10), the free surface (25) of the peripheral region Zp then being partially etched.

Abstract: A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

Abstract: A method is provided for producing, on a wafer-scale, a plurality of optoelectronic chips, including: providing a receiver substrate including a plurality of elementary zones, each being configured to contain one optoelectronic chip, and each including at least one coupling waveguide integrated into the receiver substrate and configured to be optically coupled to a first optoelectronic component; transferring a plurality of pads to the elementary zones such that the pads partially cover the at least one coupling waveguide; and producing the first optoelectronic component from the pads such that each first optoelectronic component is facing the at least one coupling waveguide of a corresponding elementary zone, and, following the transferring step, each pad of the plurality of pads extends over a set of at least two adjacent elementary zones, so as to partially cover the at least one coupling waveguide of each of the adjacent elementary zones.

Abstract: This method of fabricating a modulator comprises: following the bonding of a substrate onto an encapsulated semiconductor layer containing a first electrode of the modulator and prior to the formation of a second electrode of the modulator, the method comprises the removal (522) of a base substrate onto which the encapsulated semiconductor layer is deposited in such a manner as to expose a face of a buried layer of dielectric material, situated under the buried semiconductor layer, without modifying the thickness of the buried layer by more than 5 nm, and the formation (524, 528) of the second electrode is implemented directly on this exposed face of the buried layer such that, once the second electrode has been formed, it is the buried layer which directly forms a dielectric layer interposed between proximal ends of the electrodes of the modulator.

Abstract: A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.