Patents by Inventor Sylvie Vatoux

Sylvie Vatoux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4880288
    Abstract: Disclosed is an integrated optical waveguide. This integrated optical waveguide is obtained by doping a lithium niobate monocrystal simultaneously or in two stages, by a titanium strip, in a manner known per se, to obtain a guiding zone for the optical wave, and by a titanium film of smaller thickness which covers the guiding zone and the lateral zones to preserve a waveguide in the guiding zone and improve the electro-optical behavior of the guide to which an electrical field is applied.
    Type: Grant
    Filed: May 3, 1988
    Date of Patent: November 14, 1989
    Assignee: Thomson-CSF
    Inventors: Sylvie Vatoux, Michel Papuchon, Herve Lefevre
  • Patent number: 4778234
    Abstract: An integrated optics polarizing device having a flat substrate made for example from lithium niobate, in which an integrated wave guide has been created by doping with titanium ions and one or more so called interaction regions interacting on the wave, formed within the material of the substrate, and having refraction indices such that a wave with a first polarization direction propagates in a guided mode in said wave guide and a wave with an orthogonal polarization is extinguished. Said interaction regions are obtained by modifying the material of said substrate in a controlled way by doping or ion substitution.
    Type: Grant
    Filed: March 9, 1987
    Date of Patent: October 18, 1988
    Assignee: Thomson CSF
    Inventors: Michel Papuchon, Sylvie Vatoux
  • Patent number: 4763972
    Abstract: A differential absorption polarizer is constructed to be used in accordance with integrated optics.This polarizer includes, on a waveguide layer formed on a substrate, a layer of dielectric material whose surface has hollows and bosses and therefore several inclined zones. The hollows and bosses define minimum (em) and maximum (eM) thicknesses of the layer, which bracket the resonance thickness of the dielectric for the polarization there to be absorbed.The dielectric material layer is coated with a metal layer.
    Type: Grant
    Filed: September 24, 1986
    Date of Patent: August 16, 1988
    Assignee: Thomson-CSF
    Inventors: Michel Papuchon, Alain Enard, Sylvie Vatoux, Michel Werner